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    RHK005N03 Price and Stock

    ROHM Semiconductor RHK005N03FRAT146

    MOSFET N-CH 30V 500MA SMT3
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    ROHM Semiconductor RHK005N03T146

    MOSFET N-CH 30V 500MA SMT3
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    Quest Components RHK005N03T146 9,572
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    RHK005N03 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RHK005N03 ROHM 4V Drive Nch MOS FET Original PDF
    RHK005N03T146 ROHM Transistor Mosfet N-CH 30V 0.5A 3SMT3 Original PDF

    RHK005N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RHK005N03FRA RHK005N03 Transistors 4V Drive Nch MOS FET AEC-Q101 Qualified RHK005N03FRA RHK005N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 zFeatures 1) Low On-resistance. 2) High speed switching. 0.8 1.6 2.8 (3)


    Original     		PDF RHK005N03FRA RHK005N03 AEC-Q101

    BY 235

    Abstract: RHK005N03
    Text: SPICE PARAMETER RHK005N03 by ROHM TR Div. * RHK005N03 NMOSFET model * Date: 2006/09/08 * This model includes a diode between source and drain. *D G S .SUBCKT RHK005N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		PDF RHK005N03 RHK005N03 0000E-6 8358E-6 000E-3 0000E6 420E-12 743E-12 BY 235

    Untitled

    Abstract: No abstract text available
    Text: RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SMT3 2.9 1.1 0.4 zFeatures 1) Low On-resistance. 2) High speed switching. 0.8 1.6 2.8 (3) (2) 0.15 1.9 zApplications Switching (1)Source


    Original     		PDF RHK005N03 RHK005N03

    RHK005N03

    Abstract: T146
    Text: RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm SMT3 2.9 1.1 0.4 zFeatures 1) Low On-resistance. 2) High speed switching. 0.8 1.6 2.8 (3) (2) 0.15 1.9 zApplications Switching (1)Source


    Original     		PDF RHK005N03 RHK005N03 T146

    RSD130P10

    Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
    Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents


    Original     		PDF RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input


    Original     		PDF 2500Vrms BM6103FV-C BM6103FV-C 2500Vrms, 350ns, 180ns,

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    RSD130P10

    Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
    Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original     		PDF 5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input


    Original     		PDF 2500Vrms BM6103FV-C BM6103FV-C 2500Vrms, 350ns, 180ns, SSOP-B20W

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    ICC24

    Abstract: No abstract text available
    Text: BM6103FV-C Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input


    Original     		PDF BM6103FV-C 2500Vrms BM6103FV-C 2500Vrms, 350ns, 180ns, ICC24

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60013FV-C ●General Description The BM60013FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input


    Original     		PDF 2500Vrms BM60013FV-C BM60013FV-C 2500Vrms, 200ns, 100ns,

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60013FV-C ●General Description The BM60013FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input


    Original     		PDF 2500Vrms BM60013FV-C BM60013FV-C 2500Vrms, 200ns, 100ns, SSOP-B20W

    sp8k10s

    Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
    Text: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original     		PDF R0039A 51P6023E sp8k10s SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX

    BM6103

    Abstract: RSR025N3
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input


    Original     		PDF 2500Vrms BM6103FV-C BM6103FV-C 2500Vrms, 350ns, 180ns, BM6103 RSR025N3

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●Key Specifications  Isolation voltage:  Maximum gate drive voltage:  I/O delay time:  Minimum input pulse width:


    Original     		PDF 2500Vrms BM6103FV-C BM6103FV-C 2500Vrms, 350ns, 180ns, SSOP-B20W

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


    Original     		PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60013FV-C ●General Description The BM60013FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input


    Original     		PDF 2500Vrms BM60013FV-C BM60013FV-C 2500Vrms, 200ns, 100ns, SSOP-B20W

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●Key Specifications  Isolation voltage:  Maximum gate drive voltage:  I/O delay time:  Minimum input pulse width:


    Original     		PDF 2500Vrms BM6103FV-C BM6103FV-C 2500Vrms, 350ns, 180ns, SSOP-B20W

    RQW130N03

    Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
    Text: Product Catalog MOSFETs Discrete Semiconductors 2007-Dec. www.rohm.com ROHM MOSFETs In the society these days, MOSFET is getting rapidly popular as a key-device in many applications, such as mobile phones and automotive electronics. ROHM will keep developing new devices exactly following the


    Original     		PDF 2007-Dec. 50P5842E RQW130N03 rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130

    RSR025N3

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60013FV-C ●General Description The BM60013FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input


    Original     		PDF 2500Vrms BM60013FV-C BM60013FV-C 2500Vrms, 200ns, 100ns, RSR025N3

    BM6103

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input


    Original     		PDF 2500Vrms BM6103FV-C BM6103FV-C 2500Vrms, 350ns, 180ns, BM6103