RIA 39 TRANSISTOR Search Results

Contextual Info: or el tA PRODUCTS INC. INDUCTORS 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 MINI-L HERMETICALLY SEALED RF INDUCTORS TG, TH SERIES S e rie s A m ax. W e ig h t TG TH .3 9 0 .350 .0 6 o z . .0 7 o z . The TG and TH series offer high “ Q ” inductors in a TQ-5 transistor can con­

MTP10N06E

Abstract: 221A-04 72SM AN569 MTM10N06E evod
Contextual Info: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T | 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s

Contextual Info: HM6216255HI Series 4M high Speed SRAM 256-kword x 16-bit HITACHI ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM6216255HI Series is a 4-M bit high speed static RAM organized 256-k word x 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high

NFM61 SP

Abstract: tekelec TA 355 TEKELEC te 358
Contextual Info: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1998 Nov 19 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature

transistor BC 153

Abstract: TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719
Contextual Info: ESC D • fl23SbQS 0004104 2 « S I E G . NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF

LS395A

Contextual Info: 4-Bit Cascadable Shift Registers with 3-State Outputs LS395A FEATURES • PIN-OUT DIAGRAM T h re e -S ta te ,4 -B it, Cascadable, Parallel-ln, LS395A P arallel-Out Registers ■ Schottky-D iode-C lam ped Transistors ■ Lo w Power Dissipation . . . 7 5m W Typical Enabled

transistor rf vhf

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TPV394A VHF Linear Power Transistor , . . d esig ned s p e c ific a lly for band III T V tra n sp o se rs and tran sm itte r am p lifie rs. The T P V 39 4 A is in tern ally m atched and u se s gold m etallized d ie w ith d iffused em itter b allast

741 LEM

Abstract: AM/amplifier LEM 741
Contextual Info: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1999 A p r 23 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature

7507H

Contextual Info: //P D 7 5 0 7 H /0 8 H /7 5 C G 0 8 H E 4-BIT, SINGLE-CHIP CMOS MICROCOMPUTERS SEC NEC Electronics Inc. M ay 1987 Description T h e a<PD7507H, aiP D 7508H , and //P D 7 5 C G 0 8 H E are p in -c o m p a tib le , h ig h -s p e e d 4.19 M H z , 4 -b it, s in g le ­

Contextual Info: jy lyjxivM 19-0172; Rev 5; 10/96 SV, Low -Pow er, V oltage-O utput, S e ria l 12-B it DACs G enera / D escrip tio n The MAX538&#39;s buffer is fixed at a gain of 1 and the MAX539&#39;s buffer at a gain of 2. The MAX531 's internal op amp may be configured for a gain of 1 or 2, as well

2N6796 HARRIS

Abstract: 2n6796 jantx qpl-19500 2N6756 2N6796 diode332 2N6770 JANTX 2N6897
Contextual Info: Standard Power MOSFETs 2N6796 F ile N u m b e r 1594 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8.0A, 100V ros on = 0.18 fi Features: • SOA is po w e r-d issip ation lim ite d

MRF650

Contextual Info: MOTOROLA wm S E M IC O N D U C T O R TECHNICAL DATA M R F6 50 The RF Line 2 N P N S il i c o n R F P o w e r T r a n s is t o r 50 WATTS, 512 MHz RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r a pp licatio n s in ind u stria l and

U880D

Abstract: UB880D UB855d U855D zilog z80ctc itE 8560 schiebe UB857 U857D UB857D
Contextual Info: r ii iiH! k : j e l e l - c f a n e D n i l - c Mikroprozessorsystem U 8 8 0 □ Program m ­ speicher Arb e its­ speicher DMA □ Peripherie Mikroprozessorsystem U 880 Das M ikroprozessorsystem U 880 umfaß t ein kom plettes S ortim ent an M ikrorechnerbausteinen, welches so konzipie rt ist, daß kom plette M ikrorechner-

PL 431 transistor

Abstract: BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R
Contextual Info: PHILIPS INTERNATIONAL 711DÖSb 0Db3SPD 5 TB I IPHIN t>5E D BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO -39 metal envelope with the collector connected to the

Contextual Info: O K I Semiconductor 11801163 40-Bit Anode Driver GENERAL DESCRIPTION The MSC1163 is a monolithic IC using the Bi-CMOS process for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register and latch is

LM 886 IC chip

Abstract: TEKELEC te 358
Contextual Info: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature

QM2D

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n P ush-Pull RF P o w e r T ra n sisto r 100 WATTS, 30-500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal output and driver amplifier stages

IRG4BC20U

Abstract: IRG4BC20
Contextual Info: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

radiator 0,019

Abstract: 2n5578
Contextual Info: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max

IRG4BC20S

Abstract: RIA 39 transistor
Contextual Info: PD - 9.1597 IRG4BC20S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

MRF392

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF392 The RF Line NPN Silicon Push-Pull RF Power Transistor . d e sign e d prim arily for w id e b a n d large-signal output an d driver am plifier sta ge s in the 3 0 - 5 0 0 M H z frequency range. • Specified 28 Volt, 400 M H z Characteristics —

Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @ f=12G Hz High Associated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX35X is a High Electron M obility Transistor(H EM T) intended

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA1000-7L The RF Line UHF P o w er T ran sisto r . , . designed prim arily for wideband, large-signal output and driver am plifier stages to 1000 MHz. 9 dB TO 1000 M Hz 7 WATTS BROADBAND UHF POWER TRANSISTOR • Designed for Class A Linear Power Amplifiers

800w audio amplifier circuit diagram

Abstract: opa marking 848 CPC1017 d1n4002 CPC1017N 40riA
Contextual Info: XT XTR300 R3 00 SBOS336C – JUNE 2005 – REVISED JUNE 2011 www.ti.com Industrial Analog Current/Voltage OUTPUT DRIVER Check for Samples: XTR300 FEATURES 1 • 2 • • • • • • • • • • USER-SELECTABLE: Voltage or Current Output +40V SUPPLY VOLTAGE