RIC1307 Search Results

Contextual Info: FM24V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

FM25CL64B

Abstract: fm25cl64b-dg FM25CL64B-G
Contextual Info: FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 10 Trillion 1013 Read/Writes NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: FM24V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

25L04B-GA

Contextual Info: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 10 Trillion 1013 Read/Writes NoDelay Writes Advanced High-Reliability Ferroelectric Process

Fm25v01

Contextual Info: FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI

Contextual Info: FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process

RIC1307

Contextual Info: FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI

FM24V01G

Abstract: cypress new marking code fm24v01
Contextual Info: FM24V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI

fm24v05-gtr

Abstract: VSS12
Contextual Info: FM24V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface