RISE TIME OF PHOTOTRANSISTOR Search Results
RISE TIME OF PHOTOTRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
AM27S25DM |
![]() |
AM27S25 - OTP ROM |
![]() |
![]() |
|
9513ASP |
![]() |
System Timing Controller |
![]() |
![]() |
|
ICM7170AIPG |
![]() |
ICM7170 - Real Time Clock, CMOS |
![]() |
![]() |
|
ICM7170AIDG |
![]() |
ICM7170 - Real Time Clock, CMOS |
![]() |
![]() |
|
ICM7170IBG |
![]() |
ICM7170 - Real Time Clock, CMOS |
![]() |
![]() |
RISE TIME OF PHOTOTRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: TCPT1200X01 Vishay Semiconductors Subminiature Transmissive Optical Sensor with Phototransistor Output Description TCPT1200X01 has a compact construction where emitter and detector is located face to face on the same optical axes. The operating wavelength is |
Original |
TCPT1200X01 TCPT1200X01 2002/95/EC 2002/96/EC 08-Apr-05 | |
dual Phototransistor mouseContextual Info: TCUT1200 Vishay Semiconductors Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs Description The TCUT1200 is a compact transmissive sensor that includes an infrared emitter and two phototransistor detectors, located face-to-face in a surface mount |
Original |
TCUT1200 TCUT1200 2002/95/EC 2002/96/EC 08-Apr-05 dual Phototransistor mouse | |
Contextual Info: TCUT1200 Vishay Semiconductors Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Output Description TCUT1200 has a compact construction where the emitter and two detectors are located face to face. The operating wavelength is 950 nm. |
Original |
TCUT1200 TCUT1200 2002/95/EC 2002/96/EC 08-Apr-05 | |
MID-54A22Contextual Info: T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR Description MID-54A22 Package Dimensions The MID-54A22 is a NPN silicon phototransistor mounted Unit: mm inches in a lensed, special dark plastic package. The lensing effect ψ5.05 (.200) o of the package allows an acceptance view angle of 40 so |
Original |
MID-54A22 MID-54A22 940nm) 00MIN. | |
MID-38A22
Abstract: A 3120 opto
|
Original |
MID-38A22 MID-38A22 40MIN. 00MIN. 940nm) A 3120 opto | |
MID-57422Contextual Info: T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR MID-57422 Package Dimensions Description The MID-57422 is a NPN silicon phototransistor mounted in a lensed , water clear plastic package to fit wide range of IR light source. Unit : mm inches ψ5.05 (.200) 5.47 (.215) |
Original |
MID-57422 MID-57422 40MIN. 50TYP. 00MIN. | |
MID-30422
Abstract: MID-30A22
|
Original |
MID-30422 MID-30422 40MIN 00MIN 25mmcm MID-30422/MID-30A22 MID-30A22 MID-30A22 | |
32h22
Abstract: MID-32H22 EE 16*8* 5
|
Original |
MID-32H22 MID-32H22 40MIN 00MIN 32h22 EE 16*8* 5 | |
QP803SL
Abstract: 44t transistor QP804SL
|
OCR Scan |
QP801SL, QP803SL, QP804SL, OP130 OP231 56SflO 002b4fl QP803SL 44t transistor QP804SL | |
Contextual Info: QCK5 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS 2 3 C L PIN 1 CATHODE PIN 2 ANODE 0.2200 C L PIN 3 EMITTER PIN 1 IDENTIFICATION PIN 4 COLLECTOR 4 1 0.527 C L C L 0.185 FEATURES 0.157 OPTICAL CL 0.020SQ 4X 0.015 0.100±0.005 0.280 • No contact switching |
Original |
020SQ 100010F | |
Contextual Info: RPI-579N1EA Photointerrupter, General type Absolute maximum ratings Ta=25°C Symbol Limits Unit Forward current IF 35 mA Reverse voltage VR 5 V Power dissipation PD 70 mW V Output (phototransistor ) Input (LED) Parameter Collector-emitter voltage VCEO 30 |
Original |
RPI-579N1EA R1102A | |
MID-14H22Contextual Info: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-14H22 Description Package Dimensions Unit: mm inches The MID-14H22 is a NPN silicon phototransistor mounted in a lensed ,black plastic and side looking package. 4.00 ± .08 (.158±.003) 1.22 .048 4.12 (.162) Features |
Original |
MID-14H22 MID-14H22 850nm 30MIN 00MIN | |
94A4
Abstract: MID-94A46
|
Original |
MID-94A46 940nm) 94A4 | |
PS2501 optocoupler
Abstract: LED pspice LED pspice model AN-3005 LED pspice datasheet pspice model pspice PS2501 PS2501-1 OPTOCOUPLER USED IN SIGNAL ISOLATOR
|
Original |
||
|
|||
Contextual Info: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components Reflective Sensor To Can sensor Preliminary HVS6003-001 Key Features: Highly reliable Vertical Cavity Surface Emitting Laser Low power consumption Integrated phototransistor |
Original |
HVS6003-001 HVS6003-001 1-866-MY-VCSEL 1-866-MY-VCSEL | |
IC 4N35 circuit diagram
Abstract: 4N35GV 4N35 applications 4N25 4N25V 4N35 4N35V IF88
|
Original |
4N25G/ 4N35G IC 4N35 circuit diagram 4N35GV 4N35 applications 4N25 4N25V 4N35 4N35V IF88 | |
H11AA814
Abstract: H11A817 H11A817A H11A817B H11A817C H11A817D H11AA814A H11A8
|
Original |
H11AA814 H11A817 H11AA814: H11A817: H11AA814A: H11A817A: H11A817A H11A817B H11A817C H11A817D H11AA814A H11A8 | |
Contextual Info: SAT600 AC Input Optocoupler DESCRIPTION The SAT600 consists of a phototransistor optically coupled to a pair of light emitting diodes for AC input operation. Optical coupling between the input LEDs and output phototransistor allows for high isolation levels while maintaining low-level AC signal control capability. |
Original |
SAT600 SAT600 | |
tk19 infrared
Abstract: tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U
|
Original |
CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE CNY65 2158U tk19 infrared tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U | |
ILD610
Abstract: ILD610-1 ILD610-2 ILD610-3 ILD610-4 SFH610
|
Original |
ILD610 SFH610 ILD610-1, ILD610-2, ILD610-3, ILD610-4, E52744 ILD610 1-888-Infineon ILD610-1 ILD610-2 ILD610-3 ILD610-4 | |
TCST1210Contextual Info: TCST1210 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a |
Original |
TCST1210 D-74025 TCST1210 | |
all datasheet phototransistor
Abstract: Infrared Phototransistor mw 137 npn phototransistor TIP NPN SD5491 SE5470 phototransistor 302 302 phototransistor biconvex lens
|
Original |
SD5491 SE3450/5450, SE3455/5455 SE3470/5470 INFRA-70 SD5491 SE5470 all datasheet phototransistor Infrared Phototransistor mw 137 npn phototransistor TIP NPN SE5470 phototransistor 302 302 phototransistor biconvex lens | |
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14N1/2 INCHES SYMBOL MILLIMETERS MIN. MAX. .016 .021 .406 .534 <f>D .209 .230 5.30 5.85 40, e .178 .195 4.52 4.96 A ei h MIN. • Narrow reception angle. 5,34 210 .100 NOM ■ H erm etically sealed package. |
OCR Scan |
L14N1/2 74bb051 ST1092 ST1093 ST1097 ST1096 ST1094 ST1095 74btjfiSl | |
Contextual Info: SFH1617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5000 VRMS, 110 °C Rated FEATURES A 1 4 C C 2 3 E • Operating temperature from - 55 °C to + 110 °C • Good CTR linearity depending on forward current |
Original |
SFH1617A 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 |