RISE TIME OF SILICON PHOTODIODE Search Results

APD230-LCC

Contextual Info: APD230-LCC v 1.1 05.03.2014 Description APD230-LCC is a silicon semiconductor avalanche photodiode with an active area of 230 µm. It features extremely fast rise time of 250 ps, high gain at low bias voltage, and low capacitance. APD230-LCC is typically used for Laser Range Finding and LIDAR applications.

APD500-LCC

Contextual Info: APD500-LCC v 1.1 05.03.2014 Description APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance. APD500-LCC is typically used for Laser Range Finding and LIDAR applications.

C30737LH-500-92

Abstract: CERAMIC LEADLESS CHIP CARRIER
Contextual Info: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,

Phototransistor bp 101

Abstract: pin photodiode remote control bpy BPY61 rel photoelectric conversion Plastic Encapsulate Diodes phototransistor sensitive to red light silicon metal casing diode BPX62 transistor mm glass lens phototransistor
Contextual Info: Silicon Photovoltaic Cells, Silicon Photodiodes and Phototransistors Appnote 16 Optoelectronic components are increasingly used in modern electronics. The main fields of application are light barriers for production control and safety devices, light control and regulating equipment like twilight switches, fire detectors and facilities

S1723-04

Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

xr 2204

Abstract: Amptek XR-100CR XR-100T-CZT RTD 1055 lemo 6 pin connector lemo connector LEMO px2cr 9pin D-connector
Contextual Info: R AMP TEK All Solid State Design No Liquid Nitrogen s Landed on Mar 7 9 19 , 4 ly Ju FET Be Window Detector Temperature Monitor Cooler Mounting Stud • • • • • • Si-PIN Photodiode Thermoelectric Cooler Beryllium Window Hermetic Package TO-8 Wide Detection Range

PS0.25-5

Abstract: PIN photodiode 850 nm
Contextual Info: Pacific Silicon Sensor Series 5 Data Sheet Part Description PS0.25-5-CH Order # 41-017 ±.02 0.78 SQ 0.38 2X ANODE BOND PAD ALUMINUM 0.10 X 0.10 BACKSIDE CATHODE GOLD ALLOY DESCRIPTION APPLICATIONS • • • • 0.25 mm High Speed Epitaxy Photodiode with P on N

Contextual Info: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

Contextual Info: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as

Contextual Info: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

C30817E

Abstract: datasheet apd 1550
Contextual Info: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,

C30955EH

Contextual Info: Long Wavelength Enhanced Silicon APD C30954EH, C30955EH and C30956EH Series Overview Features and Benefits The Excelitas C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these

C30955EH

Contextual Info: Overview Features and Benefits The PerkinElmer C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes such that their long wave response i.e. > 900 nm has been

Contextual Info: TO I TOX 9110 Silicon PIN Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9110 is a high-resistivity silicon PIN detector used in military and commercial light sensor applications. Designed to have high performance from 0.9 //m to 1.06 /jm . The TOX

Contextual Info: IMAGE SENSOR NMOS linear image sensor S3902/S3903 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

S3900

Abstract: C7883 S3900-1024Q S3901-1024Q S3904-2048Q
Contextual Info: IMAGE SENSOR NMOS linear image sensor S3900/S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

C7883

Abstract: S3901-1024Q S3904-2048Q high frequency linear cmos IMAGE SENSOR
Contextual Info: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

Contextual Info: IMAGE SENSOR NMOS linear image sensor S3902/S3903 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

C8225

Contextual Info: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

S3904

Abstract: TOPR 150 photodiode transistor S3901 S3901-128Q S3901-256Q S3901-512Q S3904-1024Q S3904-256Q S3904-512Q high frequency linear cmos IMAGE SENSOR
Contextual Info: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

silicon photodiode array

Abstract: photodiode amplifier S3901 S3901-128Q S3901-256Q S3901-512Q S3904 S3904-1024Q S3904-256Q S3904-512Q
Contextual Info: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

Contextual Info: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

Contextual Info: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

C7615

Contextual Info: IMAGE SENSOR NMOS linear image sensor S3901-1024Q, S3904-2048Q Large active area type with 51.2 mm detection length NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning