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    Southco D4-APRJ4-95ZBCNA

    D4-APRJ4-95ZBCNA
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    Southco D4-APRJ4-90SS

    D4-APRJ4-90SS
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    Southco D4-APRJ4-95

    D4-APRJ4-95
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    Southco D4-APRJ4-95SS

    D4-APRJ4-95SS
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    RJ49 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


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    PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    R1019

    Abstract: R472 RJ19 C1186 C1162 c877 R947 C1239 c1165 R1007
    Text: R431 Q47 R771 T P3 2 R772 D32 D40 D79 Q22 C313 C310 R372 D25 C724 F7 U38 U27 U11 C199 C407 R328 R273 C203 Q61 Q107 R657 Q83 Q68 R652 L5 C189 C108 C104 C463 C944 C910 C342 C908 C103 C100 C455 C466 U4 C87 C31 C591 C699 R82 U15 C109 RT13 Q4 C617 C22 C411 C9 Q59


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    PDF C1293 C1088 C1112 C1113 R1002 TP900 R1019 R472 RJ19 C1186 C1162 c877 R947 C1239 c1165 R1007

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


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    PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    CX20585

    Abstract: lenovo NOZOMI-1 EXT PRE-DV LOGIC SCHEMATICS EEFSX0D331MX adp3212 817n p6c100 SLG8SP568V NZM1H-0 COR5D
    Text: A B C D E G F H J K L M N DATE 9 8 7 6 5 4 3 2 1 EC NO. Q P PART NO. VER.0.56 NOZOMI-1 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 45.


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    PDF SHORT10 10MIL VCC0R75B 1/16W 1000PF CX20585 lenovo NOZOMI-1 EXT PRE-DV LOGIC SCHEMATICS EEFSX0D331MX adp3212 817n p6c100 SLG8SP568V NZM1H-0 COR5D

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
    Text: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    PDF A12158EJ5V0DM00 Semiconductor2/9044 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358

    transistor f422

    Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
    Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­


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    PDF iPD658xx transistor f422 transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK

    bv0T

    Abstract: 658X
    Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


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    PDF b4E75S5 QQ3T701 nPD658xx bv0T 658X

    D65806

    Abstract: 9215K1
    Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


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    PDF 65-MICRON xPD65800 D65806 9215K1

    J18M

    Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
    Text: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­


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    PDF

    RJ49

    Abstract: "RJ-49" P5 94v0
    Text: 8 1. MECHANICAL DIMENSIONS : 116.26 [4 .5 7 7 ] MM AA 0Z0S9H0Q8ZHd B 3idinni/\ix B RECOMMENDED PANEL CUTOUT DIMENSION 115.5 Max. C4.S47 Max.] 41.15 [1.6203 NOTES' 1. MATERIALHDUSING-PBT POLYESTER U L-9 4V -0 MIXED GLASS FIBER. STANDARD COLOR-BLACK C0NTACTS-0.35m THICK PHOS-BRDNZE PLATED


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    PDF UL-94V-0 SUS301 68jSUBPART KPJH-28D-0-H65-070 8P40C, XPJH-28D-0-H65-070 RJ49 "RJ-49" P5 94v0

    transistor f422

    Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
    Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high


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    PDF xPD658xx transistor f422 transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f

    ru4f

    Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
    Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


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    PDF IEU-7922, IP-8090 ru4f F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425

    diode ru4d

    Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
    Text: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r


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    PDF aPD658xx diode ru4d ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


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    PDF jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys

    65630

    Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
    Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


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    PDF IEU-7922, IP-8090 65630 RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442