RJH60D1 Search Results

RJH60D1

Abstract: RJH60D1DPP-M0 PRSS0003AF-A RJH60
Contextual Info: Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0200 Previous: REJ03G1839-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

RJH60D1DPE

Contextual Info: Preliminary Datasheet RJH60D1DPE 600V - 10A - IGBT Application: Inverter R07DS0157EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D1DPP-E0 600V - 10A - IGBT Application: Inverter R07DS0893EJ0100 Rev.1.00 Nov 01, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

RJH60D1

Abstract: RJH60 RJH60D1DPE
Contextual Info: Preliminary Datasheet RJH60D1DPE R07DS0157EJ0200 Previous: REJ03G1840-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

RJH60D1DPP-M0

Abstract: IGBT inverter design and operation
Contextual Info: Preliminary Datasheet RJH60D1DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0158EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D1DPE Silicon N Channel IGBT Application: Inverter R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

RJH60D1DPP-M0

Contextual Info: Preliminary Datasheet RJH60D1DPP-M0 600V - 10A - IGBT Application: Inverter R07DS0158EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D1DPE 600V - 10A - IGBT Application: Inverter R07DS0157EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

RJH60D1

Abstract: RJH60D1DPE
Contextual Info: Preliminary RJH60D1DPE Silicon N Channel IGBT Application: Inverter REJ03G1840-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK (S -(1) ) C

PRSS0003AF-A

Abstract: RJH60D1DPP-M0 RJH60D1
Contextual Info: Preliminary RJH60D1DPP-M0 Silicon N Channel IGBT Application: Inverter REJ03G1839-0100 Rev.1.00 Oct 14, 2009 Features • High breakdown-voltage • Low on-voltage • Built-in diode Outline RENESAS Package code: PRSS0003AF-A Package name: TO-220FL C 1. Gate

Contextual Info: Preliminary Datasheet RJH60D1DPP-M0 600V - 10A - IGBT Application: Inverter R07DS0158EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

RJH60F7

Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
Contextual Info: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units

RJH60F7

Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

rjh60f5

Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
Contextual Info: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.