RJK0204DPA Search Results
RJK0204DPA Price and Stock
Rochester Electronics LLC RJK0204DPA-00-J53MOSFET N-CH 25V 50A 8WPAK |
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RJK0204DPA-00-J53 | Bulk | 3,000 | 243 |
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Rochester Electronics LLC RJK0204DPA-WS-J53N-CHANNEL POWER MOSFET |
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RJK0204DPA-WS-J53 | Bulk | 1,950 | 243 |
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Renesas Electronics Corporation RJK0204DPA-00#J53Trans MOSFET N-CH Si 25V 50A 8-Pin WPAK EP T/R |
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RJK0204DPA-00#J53 | 3,000 | 253 |
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RJK0204DPA-00#J53 | 3,000 | 1 |
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Renesas Electronics Corporation RJK0204DPA-WS#J53RJK0204DPA-WS#J53 |
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RJK0204DPA-WS#J53 | 1,950 | 253 |
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RJK0204DPA-WS#J53 | 1,950 | 1 |
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Renesas Electronics Corporation RJK0204DPA-09-J53 |
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RJK0204DPA-09-J53 | 128 |
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RJK0204DPA Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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RJK0204DPA-00#J5A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 50A WPAK | Original | 7 |
RJK0204DPA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Datasheet RJK0204DPA 25V, 50A, 2.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0944EJ0400 Rev.4.00 Mar 21, 2013 Features • High speed switching Capable of 4.5 V gate drive Low drive current |
Original |
RJK0204DPA R07DS0944EJ0400 PWSN0008DE-A | |
RJK0204DPAContextual Info: Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting |
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RJK0204DPA REJ03G1922-0210 PWSN0008DC-A current9044 RJK0204DPA | |
RJK0204DPAContextual Info: Preliminary Datasheet RJK0204DPA 25 V, 50 A, 2.7 m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0944EJ0300 Previous: REJ03G1922-0210 Rev.3.00 Nov 12, 2012 Features • High speed switching Capable of 4.5 V gate drive |
Original |
RJK0204DPA R07DS0944EJ0300 REJ03G1922-0210) PWSN0008DC-B RJK0204DPA | |
RJK0204DPAContextual Info: Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting |
Original |
RJK0204DPA REJ03G1922-0210 PWSN0008DC-A Chann9044 RJK0204DPA | |
RJH60F7
Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
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RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 |