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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0300 Rev.3.00 Jul 24, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0631JPR R07DS0879EJ0300 AEC-Q101 PRSS0003AD-A O-220FM)

    RJK0631

    Abstract: RJK0631JPR
    Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0100 Rev.1.00 Sep 19, 2012 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features •     For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0631JPR AEC-Q101 R07DS0879EJ0100 PRSS0003AD-A O-220FM) RJK0631 RJK0631JPR

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0200 Rev.2.00 May 23, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0631JPR R07DS0879EJ0200 AEC-Q101 PRSS0003AD-A O-220FM)