RJK2017DPP Search Results
RJK2017DPP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RJK2017DPP-M0#T2 |
|
ABU / MOSFET | Original | 82.83KB | 7 |
RJK2017DPP Price and Stock
Renesas Electronics Corporation RJK2017DPP-M0-T2ABU / MOSFET |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
RJK2017DPP-M0-T2 | Tube | 650 |
|
Buy Now | ||||||
Renesas Electronics Corporation RJK2017DPP-90#T2FRJK2017DPP-90#T2F |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
RJK2017DPP-90#T2F | 72,100 | 154 |
|
Buy Now | ||||||
|
RJK2017DPP-90#T2F | 72,100 | 1 |
|
Buy Now | ||||||
Renesas Electronics Corporation RJK2017DPP-B1#T2FRJK2017DPP-B1#T2F |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
RJK2017DPP-B1#T2F | 6,500 | 154 |
|
Buy Now | ||||||
|
RJK2017DPP-B1#T2F | 8,000 | 1 |
|
Buy Now | ||||||
Renesas Electronics Corporation RJK2017DPP-90#T2RJK2017DPP-90#T2 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
RJK2017DPP-90#T2 | 1,367 | 154 |
|
Buy Now | ||||||
|
RJK2017DPP-90#T2 | 1,367 | 1 |
|
Buy Now | ||||||
Renesas Electronics Corporation RJK2017DPP-M0#T2(Alt: RJK2017DPP-M0#T2) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
RJK2017DPP-M0#T2 | 20 Weeks | 25 |
|
Buy Now | ||||||
RJK2017DPP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Preliminary Datasheet RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching R07DS0664EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching |
Original |
RJK2017DPP-M0 R07DS0664EJ0100 PRSS0003AF-A O-220FL) | |
rjk2017
Abstract: RJK2017DPP-00-T2 RJK2017DPP REJ03G1797-0200
|
Original |
RJK2017DPP REJ03G1797-0200 PRSS0003AB-A O-220FN) rjk2017 RJK2017DPP-00-T2 RJK2017DPP | |
RJK2017Contextual Info: Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 Previous: REJ03G1797-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current |
Original |
RJK2017DPP R07DS0416EJ0300 REJ03G1797-0200) PRSS0003AB-A O-220FN) RJK2017 | |
RJK2017Contextual Info: Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 Previous: REJ03G1797-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current |
Original |
RJK2017DPP R07DS0416EJ0300 REJ03G1797-0200) PRSS0003AB-A O-220FN) RJK2017 | |
RJK2017Contextual Info: Preliminary Datasheet RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching R07DS0664EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching |
Original |
RJK2017DPP-M0 R07DS0664EJ0100 PRSS0003AF-A O-220FL) RJK2017 | |
RJK2017
Abstract: RJK2017DPP-00-T2
|
Original |