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    RJK2017DPP Search Results

    RJK2017DPP Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RJK2017DPP-M0#T2
    Renesas Electronics America ABU / MOSFET Original PDF 82.83KB 7
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    RJK2017DPP Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation RJK2017DPP-M0-T2

    ABU / MOSFET
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    Renesas Electronics Corporation RJK2017DPP-90#T2F

    RJK2017DPP-90#T2F
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    Verical RJK2017DPP-90#T2F 72,100 154
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    Renesas Electronics Corporation RJK2017DPP-B1#T2F

    RJK2017DPP-B1#T2F
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    Verical () RJK2017DPP-B1#T2F 6,500 154
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    RJK2017DPP-B1#T2F 1,500 154
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    Renesas Electronics Corporation RJK2017DPP-90#T2

    RJK2017DPP-90#T2
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    Verical RJK2017DPP-90#T2 1,367 154
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    Rochester Electronics RJK2017DPP-90#T2 1,367 1
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    Renesas Electronics Corporation RJK2017DPP-M0#T2

    (Alt: RJK2017DPP-M0#T2)
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    Avnet Silica RJK2017DPP-M0#T2 20 Weeks 25
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    RJK2017DPP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Datasheet RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching R07DS0664EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.036  typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original
    RJK2017DPP-M0 R07DS0664EJ0100 PRSS0003AF-A O-220FL) PDF

    rjk2017

    Abstract: RJK2017DPP-00-T2 RJK2017DPP REJ03G1797-0200
    Contextual Info: RJK2017DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1797-0200 Rev.2.00 Aug 26, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate


    Original
    RJK2017DPP REJ03G1797-0200 PRSS0003AB-A O-220FN) rjk2017 RJK2017DPP-00-T2 RJK2017DPP PDF

    RJK2017

    Contextual Info: Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 Previous: REJ03G1797-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current


    Original
    RJK2017DPP R07DS0416EJ0300 REJ03G1797-0200) PRSS0003AB-A O-220FN) RJK2017 PDF

    RJK2017

    Contextual Info: Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 Previous: REJ03G1797-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current


    Original
    RJK2017DPP R07DS0416EJ0300 REJ03G1797-0200) PRSS0003AB-A O-220FN) RJK2017 PDF

    RJK2017

    Contextual Info: Preliminary Datasheet RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching R07DS0664EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.036  typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original
    RJK2017DPP-M0 R07DS0664EJ0100 PRSS0003AF-A O-220FL) RJK2017 PDF

    RJK2017

    Abstract: RJK2017DPP-00-T2
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
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