RJK60S5DPE Search Results

RJK60S5DPE Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK60S5DPE-00#J3		Renesas Electronics Corporation	N Channel Power MOSFET, LDPAK(S)-(1), /Embossed Tape

RJK60S5DPE Price and Stock

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Rochester Electronics LLC RJK60S5DPE-00-J3 MOSFET N-CH 600V 20A 4LDPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK60S5DPE-00-J3	Bulk			19	1 - 10 - 100 $16.03 1000 $16.03 10000 $16.03	Buy Now
Renesas Electronics Corporation RJK60S5DPE-00#J3 Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) LDPAK(S)-1 Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJK60S5DPE-00#J3		40,000		20	1 - 10 - 100 $18.1125 1000 $16.375 10000 $16.375	Buy Now
Rochester Electronics	RJK60S5DPE-00#J3		40,000		1	1 $15.41 10 $15.41 100 $14.49 1000 $13.1 10000 $13.1	Buy Now

RJK60S5DPE Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK60S5DPE-00#J3		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A LDPAK		Original	PDF

RJK60S5DPE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJK60S5 Abstract: No abstract text available Text: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching	Original	PDF	RJK60S5DPE R07DS0639EJ0200 PRSS0004AE-B RJK60S5
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	PDF	RJK60S5DPE R07DS0639EJ0100 PRSS0004AE-B
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	PDF	RJK60S5DPE R07DS0639EJ0100 PRSS0004AE-B
RJK60S5 Abstract: r2a20118 rjk60s7 RJK60S3DPP-M0 RJK60S7DPN-E0 RJK60S7DPP-E0 RJK60s3dpp RJK60s4dpp-M0 Text: High-voltage SJ-MOSFETs New SJ-MOSFETs with Very Low RDS on and Ultra-low Qgd A new line-up of high-voltage SJ-MOSFETs that combine very low RDS(on) and ultra-low Qgd enable switching power supply and motor drive designs that are optimized for both the highest efficiency and compact form	Original	PDF	O-220, O-247, 0212/100/in-house/LAH/JE RJK60S5 r2a20118 rjk60s7 RJK60S3DPP-M0 RJK60S7DPN-E0 RJK60S7DPP-E0 RJK60s3dpp RJK60s4dpp-M0