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    RJP30H1 Price and Stock

    Rochester Electronics LLC RJP30H1DPP-M1-T2

    IGBT
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    DigiKey RJP30H1DPP-M1-T2 Bulk 9,068 172
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    • 1000 $1.75
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    Rochester Electronics LLC RJP30H1DPD-A0-Q2

    IGBT
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    DigiKey RJP30H1DPD-A0-Q2 Bulk 8,437 216
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    • 1000 $1.39
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    Rochester Electronics LLC RJP30H1DPP-M9-T2

    IGBT
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    DigiKey RJP30H1DPP-M9-T2 Bulk 6,058 172
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    Rochester Electronics LLC RJP30H1DPP-MZ-T2

    IGBT
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    DigiKey RJP30H1DPP-MZ-T2 Bulk 2,777 172
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    Renesas Electronics Corporation RJP30H1DPP-M1#T2

    RJP30H1DPP-M1#T2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJP30H1DPP-M1#T2 9,068 188
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    • 1000 $1.7875
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    Rochester Electronics RJP30H1DPP-M1#T2 9,068 1
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    • 100 $1.6
    • 1000 $1.43
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    RJP30H1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RJP30h1

    Abstract: rjp30H RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT High Speed Power Switching
    Contextual Info: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.


    Original     		RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30h1 rjp30H RJP30H1DPD Silicon N Channel IGBT High Speed Power Switching PDF

    RJP30H1DPD

    Abstract: rjp30h1 rjp30 rjp30H
    Contextual Info: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.


    Original     		RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30H1DPD rjp30h1 rjp30 rjp30H PDF

    PRSS0003AF-A

    Abstract: RJP30H1 rjp30H
    Contextual Info: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		RJP30H1DPP-M0 R07DS0466EJ0200 O-220FL PRSS0003AF-A) O-220FL) PRSS0003AF-A RJP30H1 rjp30H PDF

    rjp30h1

    Abstract: rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30
    Contextual Info: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		RJP30H1DPP-M0 O-220FL R07DS0466EJ0200 PRSS0003AF-A) O-220FL) rjp30h1 rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30 PDF