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    RJP60 Price and Stock

    Renesas Electronics Corporation RJP60F4DPM-00-T1

    IGBT TRENCH 600V 60A TO-3PFM
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    DigiKey RJP60F4DPM-00-T1 Tube 78 1
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    Renesas Electronics Corporation RJP6085DPK-00-T0

    IGBT 600V 40A TO3P
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    DigiKey RJP6085DPK-00-T0 Tube 50 1
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    Renesas Electronics Corporation RJP60D0DPP-M0-T2

    IGBT 600V 45A TO-220FL
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    DigiKey RJP60D0DPP-M0-T2 Tube 4 1
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    Renesas Electronics Corporation RJP60F5DPK-01-T0

    IGBT 600V 80A TO3P
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    Renesas Electronics Corporation RJP60D0DPM-00-T1

    IGBT 600V 45A TO-3PFM
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    RJP60 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    RJP6085DPK-00#T0
    		Renesas Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-3P Original PDF 8
    RJP6085DPN-00#T2
    		Renesas Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-220AB Original PDF 8
    RJP60D0DPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 122W LDPAK Original PDF 7
    RJP60D0DPK-00#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-3P Original PDF 7
    RJP60D0DPM-00#T1
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO-3PFM Original PDF 7
    RJP60D0DPP-M0#T2
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 35W TO-220FL Original PDF 7
    RJP60F0DPE-00#J3
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 122W LDPAK Original PDF 7
    RJP60F0DPM-00#T1
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 40W TO-3PFM Original PDF 7
    RJP60F4DPM-00#T1
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 41.2W TO-3PFM Original PDF 7
    RJP60F4DPQ-A0#T0
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 235.8W TO-247A Original PDF 7
    RJP60F5DPK-01#T0
    		Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 80A 260.4W Original PDF 80.4KB
    RJP60F5DPM-00#T1
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 45W TO-3PFM Original PDF 7
    RJP60V0DPM-00#T1
    		Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO-3PFM Original PDF 8

    RJP60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)


    Original     		RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A impeda9044 PDF

    rjp60d

    Abstract: RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA
    Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60D0DPK R07DS0166EJ0100 PRSS0004ZE-A temperature9044 rjp60d RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA PDF

    Contextual Info: Preliminary Datasheet RJP6016JPE 600 V - 40 A- N Channel IGBT High Speed Power Switching R07DS0878EJ0100 Rev.1.00 Sep 19, 2012 Features • For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE sat = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C)


    Original     		RJP6016JPE AEC-Q101 R07DS0878EJ0100 PRSS0004AE-B PDF

    rjp60d

    Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)


    Original     		RJP60D0DPM R07DS0088EJ0200 PRSS0003ZA-A rjp60d PDF

    RJP60V0DPM

    Contextual Info: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60V0DPM R07DS0669EJ0100 PRSS0003ZA-A RJP60V0DPM PDF

    rjp60d

    Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d PDF

    Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Features • High breakdown-voltage  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60V0DPM-80 R07DS1036EJ0100 PRSS0003ZD-A PDF

    Contextual Info: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60D0DPE R07DS0172EJ0100 PRSS0004AE-B Junctio9044 PDF

    Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B PDF

    RJP60D0DPP-M0

    Contextual Info: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60D0DPP-M0 R07DS0173EJ0100 PRSS0003AF-A) O-220FL) RJP60D0DPP-M0 PDF

    Contextual Info: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60V0DPM R07DS0669EJ0100 PRSS0003ZA-A PDF

    RJP60F0DPE

    Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B RJP60F0DPE PDF

    RJP60F4DPQ-A0

    Contextual Info: Preliminary Datasheet RJP60F4DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0675EJ0100 Rev.1.00 Jul 30, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		RJP60F4DPQ-A0 R07DS0675EJ0100 PRSS0003ZH-A O-247A) RJP60F4DPQ-A0 PDF

    Contextual Info: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A PDF

    rjp60d0dpp

    Abstract: RJP60D0DPP-M0
    Contextual Info: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60D0DPP-M0 R07DS0173EJ0100 PRSS0003AF-A) O-220FL) rjp60d0dpp RJP60D0DPP-M0 PDF

    Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60D0DPK R07DS0166EJ0200 PRSS0004ZE-A PDF

    RJU60C

    Contextual Info: Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		RJP60F7DPK R07DS1001EJ0100 PRSS0004ZE-A RJU60C PDF

    rjp60d

    Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d PDF

    RJP6065

    Abstract: RJP6065DPM RJP6065DP RJP6065DPM-00-T1 RJP606
    Contextual Info: Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V


    Original     		RJP6065DPM R07DS0204EJ0100 PRSS0003ZA-A RJP6065 RJP6065DPM RJP6065DP RJP6065DPM-00-T1 RJP606 PDF

    Contextual Info: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching


    Original     		RJP60F5DPK R07DS0757EJ0100 PRSS0004ZE-A PDF

    30g 122 igbt

    Abstract: rjp60d RJp60 RJP60D0DPE-00-J3 rjp6
    Contextual Info: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60D0DPE R07DS0172EJ0100 PRSS0004AE-B impedanc9044 30g 122 igbt rjp60d RJp60 RJP60D0DPE-00-J3 rjp6 PDF

    rjp60d

    Abstract: RJP60D0DPM-00-T1 RJp60 RJP60D0DPM TO-3PF PRSS0003ZA-A rjp60d0 R07DS0088EJ0100
    Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)


    Original     		RJP60D0DPM R07DS0088EJ0100 PRSS0003ZA-A rjp60d RJP60D0DPM-00-T1 RJp60 RJP60D0DPM TO-3PF PRSS0003ZA-A rjp60d0 R07DS0088EJ0100 PDF

    Contextual Info: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		RJP60F5DPM R07DS0587EJ0200 PRSS0003ZA-A PDF

    Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJP60V0DPM-80 R07DS1036EJ0200 PRSS0003ZD-A th2886-9022/9044 PDF