RM73B2B120J Search Results

RM73B2B

Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110

Contextual Info: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

mrf5s21090

Contextual Info: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19100LR3 and MRF5S19100LSR3 replaced by MRF5S19100HR3 and MRF5S19100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line

Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

j340 motorola make

Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: MRF5S19090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

ferroxcube for ferrite beads

Abstract: MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

RM73B2B

Abstract: MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3
Contextual Info: MRF5S19130H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

arion

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors MRF21090R3 MRF21090SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

mosfet j122

Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J
Contextual Info: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

AN1955

Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3

GX03005522

Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs

AN1955

Abstract: MRF5S19100HR3 MRF5S19100HSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19100HSR3

ATC 100C

Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

CDR33BX104AKWS

Abstract: MRF5S19100LR3 MRF5S19100LSR3
Contextual Info: MOTOROLA Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19100LR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to

AGR09180EF

Abstract: JESD22-C101A
Contextual Info: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

ferroxcube ferrite beads

Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

MRF284

Abstract: wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

transistor MARKING NC KRC

Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
Contextual Info: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

Contextual Info: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110