RN 3Z Search Results
RN 3Z Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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RN3Z | Galaxy Semi-Conductor Holdings | HIGH EFFICIENCY RECTIFIER | Original | 61.69KB | 2 | ||
RN3Z | Unknown | Silicon Diode | Original | 101.09KB | 3 | ||
RN 3Z |
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Ultra-Fast-Recovery Rectifier Diodes | Original | 21.17KB | 1 | ||
RN3Z |
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Silicon Diodes / Silicon Varistors | Original | 2.19MB | 113 | ||
RN3Z |
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Ultra-Fast-Recovery Rectifier Diodes | Original | 21.17KB | 1 | ||
RN3ZZ | Galaxy Semi-Conductor Holdings | HIGH EFFICIENCY RECTIFIER | Original | 61.69KB | 2 |
RN 3Z Price and Stock
Amphenol Positronic SP8RN3RN3ZZN21F2091SP8RN3RN3ZZN21F2091 |
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SP8RN3RN3ZZN21F2091 | Bulk | 25 |
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SP8RN3RN3ZZN21F2091 |
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Amphenol Positronic SP8RN3RN3ZZN21M2091SP8RN3RN3ZZN21M2091 |
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SP8RN3RN3ZZN21M2091 | Bulk | 25 |
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SP8RN3RN3ZZN21M2091 |
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Amphenol Positronic SP8RN3RN3ZZN21F2091-AASP8RN3RN3ZZN21F2091/AA |
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SP8RN3RN3ZZN21F2091-AA | Bulk | 25 |
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Amphenol Positronic SP8RN3RN3ZZN21M2091-AASP8RN3RN3ZZN21M2091/AA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SP8RN3RN3ZZN21M2091-AA | Bulk | 25 |
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Intel Corporation BX8071514700F S RN3Z(Alt: BX8071514700F S R) |
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BX8071514700F S RN3Z | 5 |
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RN 3Z Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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74L8138
Abstract: SC80C451 read/74L8138
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OCR Scan |
87C51 80C31 G8HC11 74LS373 74L8138/PLD 74LS374 74L8374 PSB211R PSD211R PEP300 74L8138 SC80C451 read/74L8138 | |
D4515
Abstract: d4518bc 74c920 74C929 4031B JRC 4069UBF D4518 74ls247 fairchild linear integrated circuits 74c14
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OCR Scan |
24-Pin D4515 d4518bc 74c920 74C929 4031B JRC 4069UBF D4518 74ls247 fairchild linear integrated circuits 74c14 | |
A50DCContextual Info: Ultra-Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM V RN 3Z 200 I F (AV) (A) IFSM (A) Tj (°C) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot 3 VF (V) IF (A) max 80 200 3.5 Electrical Characteristics (Ta = 25°C) t rr ➁ |
Original |
UL94V-0 A50DC | |
K591
Abstract: CSNF161 CSNJ481 12to m633
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OCR Scan |
0755-b3z 1b/3327b659/332 51B033 CSNJ481 CSNJ401-OO1* CSNJ401-OO2 CSNJ401-OO3* 30lvanic 500rc -40toe5 K591 CSNF161 CSNJ481 12to m633 | |
T150Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics(Ta=25℃) Absolute Maximum Ratings Parameter Type No. VRM (V) RN 3Z 200 IFSM (A) I F( AV) (A) Tstg Tj (℃) (℃) 50Hz Half-cycle Sinewave Single Shot 3 80 3 200 |
Original |
Tj150 UL94V0 T150 | |
LA 7693
Abstract: lm 7933 lm 3178 SO 607 mh 4S72 LM 2741 LM 7493 pa 3029 b Robinson Nugent s2 Lm 304 PN
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OCR Scan |
PAK-50 7-12mm) P50L-XXXP-A-TGF P50L-XXXS-A-T LA 7693 lm 7933 lm 3178 SO 607 mh 4S72 LM 2741 LM 7493 pa 3029 b Robinson Nugent s2 Lm 304 PN | |
Contextual Info: OSM SMA For Strip IhuismlMlon U rn Clroutta Where launching directly to etripllne circuit* la required, the OSM (8MA) sblpflne eerlee I* the optimum choloe. Launching can be aooompllahed on the end or eurlace of a droult board with oontact terminations designed to |
OCR Scan |
BJ71401602 t-t43VtZ | |
Contextual Info: Bulletin 127099 rev. A 10/97 International IÖ R Rectifier IRK.F200. SERIES MAGN-A-pak Power Modules FAST THYRISTOR/DIODEand THYRISTOR/THYRISTOR Features Fast tu rn -o ff th yristo r Fast recovery diode High surge capability E lectrically isolated baseplate |
OCR Scan |
E78996 20ohms, | |
RH96N74
Abstract: JIS-C-6443
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Original |
O46-255-2560 ChY-7727 RH96N74 JIS-C-6443 | |
RH96N74Contextual Info: TOCOS 33 mII B% Messrs TOCOS AMERICA ,INC. & $ Model Carbon film variable resistor rn;f.fif#S4 Customer Specification Number @4i#MS8 Customer Part Name B%$P&S4 Customer Part Number %%R58 TOCOS Part Name %4kif#S 4 TOCOS Specification Number RY -7 7 2 8 R E |
Original |
O273-52-6031 RH96N74 | |
Contextual Info: PD - 9 .1350B In te rn a tio n a l IQ R Rectifier IRLI530N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated |
OCR Scan |
1350B IRLI530N | |
IRL2910 equivalent
Abstract: 2D 1002 diode EA MOSFET 63 ng
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OCR Scan |
1384B IRLI2910 IRL2910 equivalent 2D 1002 diode EA MOSFET 63 ng | |
ir9245Contextual Info: PD - 9 .1496A In te rn a tio n a l IQ R Rectifier IRLI 520 N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm |
OCR Scan |
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Contextual Info: ! "SU LUfcW M tti-71 m lam-*- »1_ < T v — =3Z*-* ? h O H UPPER CO NTACT) B W » E U *100 Jçy| n n rn n n n n n n n n n n n n n n n n n n îin n n n n n n n iin n n n B l Éà |
OCR Scan |
tti--------71 | |
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Contextual Info: 83C96 10BASE-TEthernet Transceiver With On Chip Filters and Digital Interface Technology, Incorporated O ctob e r 1994 PR ELIM INA R Y Description SEEQ AutoDUPLEX Designation The 83C 96 is a hig h ly integ ra te d a nalog interface 1C for tw isted p a ir E th e rn et a pplications 10BASET . |
OCR Scan |
83C96 10BASE-TEthernet 10BASET) MD400140/- 83C96 10BASE-T MD400140/â | |
Q 5426
Abstract: BPB46445445 IYB176E
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Original |
IYB176E/ D57895; BPB46445445 894fV? 644fV 74UCB 74UCB Q 5426 IYB176E | |
Contextual Info: Whpt H E W LE T T WLtim P A C K A R D DC - 50 GHz t r ia b le A ttenuator Tfechnical Data HMMC-1002 Features • S p ecifie d Frequen cy Range: D C -26.5 GHz • R etu rn L o ss: 10 dB • Mininmim A ttenuation: 2.0 dB • M axim um A ttenuation : 30.0 dB |
OCR Scan |
HMMC-1002 HMMC-1002 1997Hewlett-Packard 5965-5452E | |
Contextual Info: In to rn o ti O n o I a d v a n c e d in f o r m a t i° n IR2137 IOR Rectifier 3 Features • Floating channel up to +600V • “soft” over-current shutdown turns off all six outputs • Integrated high side desaturation circuit • Controlled “soft” turn on for EMI reduction |
OCR Scan |
IR2137 IR2137 | |
Contextual Info: PDG3B Sents J te tÛOOMte 3 Wt y/ 8mêttbmé/LûWfastrtion Lass! Hi Bs! HermeticPackege/SKÌ6 j; o j + "M & rn '-^-LiX^ Ä s pf PRINCIPAL SPECIFICATIONS Freq. Perform., MHz PDG-3B-150 1 -3 0 0 PDG-3B-530 5 0 -1 0 0 0 2 -2 0 0 1 -3 0 0 50 - 800 8 0 0 - 1000 |
OCR Scan |
PDG-3B-150 PDG-3B-530 29Feb96 | |
AY 6 smdContextual Info: 1. M echanical D im ensions: . E lectrica l S p ecifica tio n s: Isolation: RCV Turns Rotio: o PJ* I CD 0.045— 1 IC Side LL: 0 .3 u H IC Side DCR: 0 .6 Line Side DCR: SEC 0.950 M inim um @ 10KHz Max @ 1M Hz R e tu rn 100m V lO O m V S hort Line Side Ohms Max |
OCR Scan |
XF0013QESD1 MIL-STD-2026, UL94V-0 E15155B 102mm) 13QESD1 Vlay-04-06 AY 6 smd | |
QB-28
Abstract: QB8C-2 QB-442 mem 2000 QB8C
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OCR Scan |
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Contextual Info: m m m ^ m ^ y i ' 3 ^-^0225^1_t o c o s a*—s> WIRE-WOUND PRECISION POTENTIOMETERS TI 'iR ^ .n ^« ✓y IJ — ✓1C * / > FEATURES • 3 i a i E A 'e > i o i i i e i T 7 j7 ' r > 7 7 / • 2 '- f • V J U J ftltR ltE • L in e - u p includes products ranging from 3 to lO tu rn s |
OCR Scan |
T3540S 10turns 3540S 3543S 3545S T3540S T3543S MIL-STD-202 000Hl | |
Z685
Abstract: C3352 Z785 501Z k145 po 02 BE-211
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Original |
0-1-z785~ Yuz5-286 -167z//z7-21 9z5-286 5z00z e21752// Yf867 6-67z1| g0-77 67z786 Z685 C3352 Z785 501Z k145 po 02 BE-211 | |
air cooler
Abstract: m612 ln 258 SKiiP2 cooler
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OCR Scan |
M6-12 //M4-10 M4-10 air cooler m612 ln 258 SKiiP2 cooler |