RO4403
Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Text: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the
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6010LM,
RO3003
RO3035
RO3203
RO3006
RO3206
RO3010
RO3210
RO4003C
RO4350B
RO4403
Rogers RO4003
rt/duroid 5880
RO4450F
rogers 5880
RO3006
rogers laminate materials
RO4450B
RO3210
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Untitled
Abstract: No abstract text available
Text: A T C 5 5 0 Z S e r i e s u b C C A PA C I T O R S ATC 550Z Series UBC™ Ultra-Broadband Capacitor Features: • EIA 0201 Case Size • Capacitance: 10 nF min. •O perating Frequency: 160 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: < 0.4 dB typical
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STR G 8654
Abstract: A673 transistor transistor A673 transistor Bu 45080 TT 2188 mx 362-0 TRANSISTOR SMD MARKING CODE 3401 diode BZW 70-20 sfh 202 diode 3302 81a ir receiver
Text: Foreword Foreword Foreword Vorwort The information in this catalog is correct as of March 2011. Die Angaben in diesem Katalog entsprechen dem Stand März 2011. All products listed in this catalog are RoHS compliant, a fact that will be explicitly noted in the respective data sheet. For up-to-date
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RO3006
Abstract: BLF7G10L
Text: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 3 — 16 February 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance
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BLF7G10L-250;
BLF7G10LS-250
BLF7G10L-250
7G10LS-250
RO3006
BLF7G10L
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Untitled
Abstract: No abstract text available
Text: A T C 5 5 0 U S E R I E S U B C TM C A PA C I T O R S ATC 550U Series UBCTM Ultra-Broadband Capacitor Features: • 0301 Case Size • Capacitance: 100 nF • Operating Frequency: 16 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: 0.4 dB typical • One Piece Construction
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ATC550Z
Abstract: ATC550
Text: A T C 5 5 0 Z S e r i e s u b C C A PA C I T O R S ATC 550Z Series UBC™ Ultra-Broadband Capacitor Features: • EIA 0201 Case Size • Capacitance: 10 nF min. •O perating Frequency: 160 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: < 0.4 dB typical
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code u
Abstract: No abstract text available
Text: A T C 5 5 0 U S E R I E S U B C TM C A PA C I T O R S ATC 550U Series UBCTM Ultra-Broadband Capacitor Features: • 0301Case Size • Capacitance: 100 nF • Operating Frequency: 16 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: < 0.4 dB typical • One Piece Construction
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0301Case
0301ms
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transistor J333
Abstract: J333 J333 transistor
Text: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 2 — 11 November 2011 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance
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BLF7G10L-250;
BLF7G10LS-250
BLF7G10L-250
7G10LS-250
transistor J333
J333
J333 transistor
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Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 2 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
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BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
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Untitled
Abstract: No abstract text available
Text: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 4 — 13 September 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance
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BLF7G10L-250;
BLF7G10LS-250
BLF7G10L-250
7G10LS-250
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Untitled
Abstract: No abstract text available
Text: A T C 5 5 0 Z S e r i e s u b C C A PA C I T O R S ATC 550Z Series UBC™ Ultra-Broadband Capacitor Features: • EIA 0201 Case Size • Capacitance: 10 nF min. •O perating Frequency: 160 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: < 0.4 dB typical
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RO3006
Abstract: No abstract text available
Text: A T C 5 5 0 Z S E R I E S U B C C A PA C I T O R S ATC 550Z Series UBC™ Ultra-Broadband Capacitor Features: • EIA 0201 Case Size • Capacitance: 10 nF min. • Operating Frequency: 160 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: < 0.4 dB typical
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Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
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BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
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Untitled
Abstract: No abstract text available
Text: A T C 5 5 0 U S E R I E S U B C TM C A PA C I T O R S ATC 550U Series UBCTM Ultra-Broadband Capacitor Features: • 0301 Case Size • Capacitance: 100 nF • Operating Frequency: 16 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: < 0.4 dB typical • One Piece Construction
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RO3006
Abstract: No abstract text available
Text: A T C 5 5 0 U S E R I E S U B C TM C A PA C I T O R S ATC 550U Series UBCTM Ultra-Broadband Capacitor Features: • 0301Case Size • Capacitance: 100 nF • Operating Frequency: 16 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: < 0.4 dB typical • One Piece Construction
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0301Case
0301s
RO3006
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Untitled
Abstract: No abstract text available
Text: A T C 5 5 0 U S E R I E S U B C TM C A PA C I T O R S ATC 550U Series UBCTM Ultra-Broadband Capacitor Features: • 0301 Case Size • Capacitance: 100 nF • Operating Frequency: 16 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: 0.4 dB typical • One Piece Construction
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Untitled
Abstract: No abstract text available
Text: A T C 5 5 0 Z S e r i e s u b C C A PA C I T O R S ATC 550Z Series UBC™ Ultra-Broadband Capacitor Features: • EIA 0201 Case Size • Capacitance: 10 nF min. •O perating Frequency: 160 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: < 0.4 dB typical
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RO3006
Abstract: No abstract text available
Text: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 4 — 13 September 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance
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BLF7G10L-250;
BLF7G10LS-250
BLF7G10L-250
7G10LS-250
RO3006
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Untitled
Abstract: No abstract text available
Text: A T C 5 5 0 Z S e r i e s u b C C A PA C I T O R S ATC 550Z Series UBC™ Ultra-Broadband Capacitor Features: • EIA 0201 Case Size • Capacitance: 10 nF min. •O perating Frequency: 160 KHz -3 dB roll-off to 40+ GHz* • Insertion Loss: < 0.4 dB typical
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A1712-4
Abstract: MSWSHC-040-40 RO3006
Text: MSWSHC-040-40 PIN DIODE SWITCH ELEMENT 2615 Molded Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 2.6 X 1.5 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is
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MSWSHC-040-40
STD-J-20C
A17124
A1712-4
MSWSHC-040-40
RO3006
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