ROE D3 Search Results

RB1002

Abstract: UM83C002 ST412HP UM83C001 127fl
Contextual Info: UNICORN MIC ROE LECTRONICS 54E D • ^76700 QGQQ37S *1 ■ UM83C002 Ü M Ö RAM Buffer Controller Features ■ ■ * ■ ■ ■ ■ ■ No lost RAM cycles for DMA break-in 3 DMA channels Host processor port Refresh circuit for dynamic RAM buiit-in RAM access priority network

48v, 20 amp battery charger circuit diagram

Abstract: ic ana 650 ana 650 chang capacitor M62258FP 1.6V charger BATTERY CHARGE I.C
Contextual Info: A R Ytion. MITSUBUSHI <Dig./Ana. INTERFACE> e. ang a N cific ct to ch I e p s e j l I M fina sub M62258FP L is is not alimits are Th tric P RoE e c ti : rame N e pa Som GENERAL PURPOSE BATTERY CHARGER CONTROL IC New Product GENERAL DESCRIPTION PIN CONFIGURATION TOP VIEW

252063

Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each

128W18

Abstract: 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp
Contextual Info: 128-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 32-Mbit PSRAM Stacked-CSP Family Datasheet Product Features • ■ ■ ■ Flash Architecture — Flexible, Multiple-Partition, DualOperation: Read-While-Write / ReadWhile-Erase — 32 Partitions, 4 Mbits each

252063

Contextual Info: Intel Wireless Flash Memory W30 SCSP 128WQ Family Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each ■ ■ —1 Parameter Partition, 8 Parameter + 7

64W18

Abstract: FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter

38F1020W0YBQ0

Abstract: 28F320W18 38F1020W0YTQ0 flash "high temperature data retention" mechanism
Contextual Info: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each

FLASH MEMORY 38F

Abstract: Intel SCSP 88-ball
Contextual Info: Intel Wireless Flash Memory W30 SCSP 128WQ Family Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each ■ ■ —1 Parameter Partition, 8 Parameter + 7

251407

Abstract: RD48F2000W
Contextual Info: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter

W18 88

Abstract: FLASH MEMORY 38F Intel SCSP FLASH MEMORY 48F intel 24024
Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each

Contextual Info: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter

28F320W18

Abstract: 32W18 38F1020W0YBQ0 38F1020W0YTQ0 252635
Contextual Info: 32-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 8-Mbit SRAM StackedChip Scale Package 38F1020W0YTQ0, 38F1020W0YBQ0 Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each

PF48F4400L0

Abstract: RD38F3040L0YBQ0 rd38f405 RD48F4400L0 strataflash reliability PF48F4000L0YBQ0 5,5 KW asynchronous FLASH MEMORY 48F intel MLC flash Intel SCSP
Contextual Info: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 768-Mbit LVQ Family with Asynchronous Static RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Code and data segment: 128- and 256Mbit density; PSRAM: 32- and 64-Mbit density; SRAM: 8 Mbit density.

FLASH MEMORY 38F

Abstract: 88-ball 28F320W18 38F1020W0YBQ0 38F1020W0YTQ0
Contextual Info: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each

RD38F3040L0YBQ0

Abstract: flash "high temperature data retention" mechanism rd38f405 PF48F4400L Intel SCSP LV30 28F256L18 28F256L30 400000-40FFFF RD48F4400L
Contextual Info: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 768-Mbit LVQ Family with Asynchronous Static RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Code and data segment: 128- and 256Mbit density; PSRAM: 32- and 64-Mbit density; SRAM: 8 Mbit density.

XO-31

Abstract: AAD00-AAD04 wtl3164 weitek NS32580-30 NS32081
Contextual Info: PRELIMINARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller G eneral Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).

TDA1011

Abstract: SCN-8031 full bridge mosfet smps MEA8000 TDA1011 equivalent
Contextual Info: Signetics Linear Products Preliminary Speech Synthesizer DESCRIPTION The MEA8000 is a 24-pin N MOS integrated circu it for generating good quality speech from dig ita l code w ith a program m able b it rate. The circu it is prim arily intended fo r applications in m icroprocessor controlled

weitek 3164

Abstract: WTL-3164-15 weitek FPU weitek AADD CA001 NS32532 t03h 32580-WTL3164 R4X20
Contextual Info: PRELIM INARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller G eneral Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).

RT5014

Abstract: NS32081 BC-NB weitek S3258 e9421
Contextual Info: PRELIMINARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller General Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).

Contextual Info: FEDL2240DIGEST-04 Issue Date: Nov 24, 2009 ML2240 4-Channel Mixing Oki ADPCM Algorithm-Based Speech Synthesis LSI GENERAL DESCRIPTION The ML2240 is a 4-channel mixing speech synthesis device which connects an external ROM expanded up to 128-Mbit maximum . This ML2240 allows to select the playback method from the 8-bit PCM, non-linear 8-bit

speech synthesizer

Contextual Info: Signetics Linear Products Preliminary Speech Synthesizer DESCRIPTION The MEA8000 is a 24-pin N MOS integrated circu it for generating good qua lity speech from dig ita l code w ith a program m able b it rate. The circu it is prim arily intended fo r a pplications In m icroprocessor controlled

MSM9811

Abstract: ROE capacitor m9811 MSM9811GS-BK QFP64-P-1414-0 RA21 RA23 QFP64-P-1414
Contextual Info: FEDL9811DIGEST-02 1Semiconductor MSM9811 This version: May 2001 Previous version: Jun. 2000 4-Channel Mixing OKI ADPCM Type Voice Synthesis LSI This document contains minimum specifications. For full specifications, please contact your nearest Oki office or

amcc s5933

Abstract: S5933 Logic diagram for asynchronous FIFO sc3528 Asynchronous FIFO ROE d3 74F32 74F74 CY7C464 IDT72240
Contextual Info: S5933 32 Bit FIFO Example Application Note Revision 2 November 20, 1998 Introduction Asynchronous Design Example Objective This application note provides the designer with two external FIFO interface examples. Shown first is an asynchronous external 32 bit FIFO interface and considerations when

28F640w18t

Abstract: flash "high temperature data retention" mechanism FLASH MEMORY 38F INTEL wireless FLASH MEMORY DATASHEETS 28F640W18 28F640W30 64WQ 251216 1.8V SRAM
Contextual Info: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ Flash Architecture — Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — Blocks: 32-Kword Main, 4-Kword Parameter — Top/Bottom Parameter - single flash die