RQM2201DNS Search Results

RQM2201DNS Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RQM2201DNS		Renesas Technology	Silicon N Channel MOS FET Power Switching	Original	PDF	115.84KB	8
RQM2201DNSTL-E		Renesas Technology	Silicon N Channel MOS FET Power Switching	Original	PDF	115.83KB	8
RQM2201DNSTR-E		Renesas Technology	Silicon N Channel MOS FET Power Switching	Original	PDF	115.83KB	8

RQM2201DNS Price and Stock

Filter by Manufacturer

Renesas Electronics Corporation


Renesas Electronics Corporation RQM2201DNS#P0 N Channel MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RQM2201DNS#P0		32,000		1	1 - 10 - 100 $1.39 1000 $1.15 10000 $1.03	Buy Now
Renesas Electronics Corporation RQM2201DNSWS#P1 N Channel MOS FET Power Switching
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RQM2201DNSWS#P1		1,970		1	1 - 10 - 100 $1.45 1000 $1.21 10000 $1.07	Buy Now

RQM2201DNS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
hwson-6 ion Abstract: M2201 RQM2201DNS RQM2201DNSTL-E RQM2201DNSTR-E PWSN0006ZA a1sa Contextual Info: RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Features • • • • • Small, thin and leadless type package 3 x 3 mm, t = 0.8 mm max. Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ)	Original	RQM2201DNS REJ03G1492-0200 PWSN0006ZA-A WSON0303-6 M2201" hwson-6 ion M2201 RQM2201DNS RQM2201DNSTL-E RQM2201DNSTR-E PWSN0006ZA a1sa	PDF
hwson-6 ion Contextual Info: RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03G1492-0100 Rev.1.00 Dec 12, 2006 Features • • • • • Small, thin and leadless type package 3 x 3 mm, t = 0.8 mm max. Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ)	Original	RQM2201DNS REJ03G1492-0100 PWSN0006ZA-A WSON0303-6 M2201" hwson-6 ion	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
M2201 Abstract: RQM2201DNS RQM2201DNSTL-E RQM2201DNSTR-E hwson-6 ion Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF