RQW 130 Search Results
RQW 130 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: /a\W< Female Style R Expanded Press-Fit 3 rows 3 x 50 Inverted Contact Design and Termination Length for S 2.4 mm PCB's Number of Contacts Loading Description III Part Number Performance classes according to DIN 41612 II I i—i—i 0.6 x 0.6 mm Post Profile |
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Contextual Info: TD350E Advanced IGBT/MOSFET driver Datasheet - production data Applications • 1200 V, 3-phase inverters Motor control UPS systems Description Features 1.5 A source/2.3 A sink typ. gate drive Active Miller clamp feature Two-level turn-off with adjustable level and |
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TD350E TD350E DocID018539 | |
RQW 130Contextual Info: UNLESS OTHERWISE NOTED PLOT SCALE: .300/ DIMSCALE: .250 "1 NO. O F P O S . X .1 0 0 + . 3 0 0 REF. NO. OF POS. X .100 + .200 REF. 01 02 R R R U LL _ _U n fl _LI fl R U LL_ • r DIMENSIONS ARE IN INCHES ONE PLACE DEC IM ALS ±.1 THREE PLACE DECIMALS ± . 0 0 5 |
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RQW130N03
Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
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2007-Dec. 50P5842E RQW130N03 rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130 | |
RP144LD
Abstract: RP336LD RP56LD RS2180
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DQG53/' TM99ELV RP56LD, RP336LD, RP144LD 90/K56flex K56flex-compatible RP144LD RP336LD RP56LD RS2180 | |
Contextual Info: KM41C1000D CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -6, -7 o r-8 , power consumption (Normal |
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KM41C1000D_ KM41C1000D/D-L 002D143 | |
RP144LD
Abstract: RP336LD RP56LD RS2180 RQW 130
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DQG53/' TM99ELV RP56LD, RP336LD, RP144LD 90/K56flex K56flex-compatible RP144LD RP336LD RP56LD RS2180 RQW 130 | |
push button switch 2 pin
Abstract: 10BASET pm5350 transistor SMD making code 3fb d32 7b5 "Lookaside Cache" diode 36b3 MIC29501 application R3F SMD smd b6h
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Contextual Info: KM48C512DT CMOS DRAM ELECTRONICS 5 1 2 K x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time |
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KM48C512DT 512Kx8 16Mx4, 512Kx8) QD35421 | |
EH18
Abstract: 304X4
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KM44V4104BS 16Mx4, 512Kx8) 44V4104BS EH18 304X4 | |
pd424400
Abstract: d424400
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uPD424400 26-pin /iPD424400-60 /XPD424400-70 /xPD424400-80 XPP424400 IR35-207-2 VP15-207-2 bH57SES pd424400 d424400 | |
KM416V4104ASContextual Info: KM416V4104AS CMOS D R A M ELECTRONICS 4 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , |
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KM416V4104AS 4Mx16 D033TbS KM416V4104AS | |
Contextual Info: KM416V1004BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a lamily of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power |
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KM416V1004BT 1Mx16 | |
High Speed Contacts
Abstract: High Speed 12-130 thermax 1536-224 BACC47GM1 tensolite 24443 EN3155 Cross Reference EN3155-074 BMS1372T03C04G024 en3155 m39029
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Contextual Info: KM416V4000AS CMOS D R A M ELECTRONICS 4M X 16Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6 |
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KM416V4000AS 16Bit 4Mx16 | |
d1710 substitution
Abstract: 367-221-NF L-2119-D tvr 901 gore gsc D38999 series I II TFLEX-402 NF24-2Q100 tensolite Tensolite NF26Q100-01
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ET2PC236
Abstract: S280W502-6 NF24Q100-01-200C nf22q100 ABS0386WF24 MX100Q-24 NF26Q100 ET2PF870 NF24Q100 gore gsc
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21-33384-51
Abstract: ST5M1323-001 Axon TWINAX CEC-RWC-18664 RG63 ET2PF870 Amphenol 38999 - Connectors CATALOG tensolite ABS1503 gore gsc
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AMG202
Abstract: FATE661-1 AEM10000
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Contextual Info: PRODUCT CATALOG Featuring OLED, LCD and VFD Technologies “Committed to providing the highest quality display products and design services.” Company Profile Since 2001, Newhaven Display has been providing the North American marketplace with cost effective, high quality OLED, LCD, and VFD |
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M0220MD-202MDAR1-1 M0220MD-202MDAR1-3 M0420SD-204SDAR1-3 | |
LI 803-4Contextual Info: MICRO-INFINITY ICN77000 Series Controller ® SERIES THE NEW STANDARD FOR QUALITY NEWPORTnetSM ON-LINE SERVICE http://www.newportUS.com e-mail: info@newportUS.com www.newportUS.com/software ® NEWPORT Electronics, Inc. $GGLWLRQDO 3URGXFWV IURP ® NEWPORT Electronics, Inc. |
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ICN77000 D-75392 12650ML-03F M2491/N/1101 LI 803-4 | |
Contextual Info: RISCoreTM 32300 Family Integrated Processor HDWXU WXUHV 79RC32332 ◆ ◆ RC32300 32-bit Microprocessor – Up to 133 MHz operation – Enhanced MIPS-II Instruction Set Architecture ISA) – Cache prefetch instruction – Conditional move instruction – DSP instructions |
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79RC32332 RC32300 32-bit 100MHz 133MHz 208-pin IDT79RC32 IDT79RC32V332 100DP, | |
332-DPContextual Info: RISCoreTM 32300 Family Integrated Processor HDWXU WXUHV 79RC32332 ◆ ◆ RC32300 32-bit Microprocessor – Up to 133 MHz operation – Enhanced MIPS-II Instruction Set Architecture ISA) – Cache prefetch instruction – Conditional move instruction – DSP instructions |
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79RC32332 RC32300 32-bit 23-bit IDT79RCXX 100MHz 133MHz 208-pin IDT79RC32 332-DP | |
Contextual Info: HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword 64-bit, 1-Bank Module (8 pcs of 8 M 8 Components) (HB52E89EM) 8-Mword 72-bit, 1-Bank Module (9 pcs of 8 M 8 Components) 128 MB Unbuffered SDRAM DIMM, 100 MHz Memory |
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HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F HB52E88EM) 64-bit, HB52E89EM) 72-bit, HB52E168EN) 16-Mword |