RRE RELAY Search Results

JAN2N2324

Abstract: Unitrode 2n2323 JANTX 2N2324 2N2325 432t JANTX 2N2326 2N2323 2N2324 JANTX2N2326A JANTX2N2323
Contextual Info: SCRs 2N2322-2N2329 2N2323A-2N2328A 1.6 Amp, Planar FEATURES DESCR IPTIO N • A vailable as JA N , JA N T X V & JA N T X V Types • 1.6A D.C. C u rre n t • Peak Currents: to 30A • V oltage R atings: to 400V • 20/iA Max. T rigger C u rre n t "A " types

Contextual Info: IL30/31/55 DUAL CHANNEL ILD30/31/55 QUAD CHANNEL ILQ30/31/55 SINGLE CHANNEL FEATURES • C u rre n t T ra n sfe r R atio IL/ILD /ILQ 30/55, 100% m in. IL/ILD /ILQ 31, 200% m in. Photodarlington Optocoupler Dimensions in inches mm Single Channel 125 m A Load C u rre n t R ating

BTS 149

Abstract: 6503A "ESP" bts149
Contextual Info: SIEMENS HITFET BTS149 Smart Lowside Power Switch Features Product Summary • • • • • • • • • C o n tin io u s dra in so u rce vo lta g e O n -sta te resistance C u rre n t lim itation Load cu rre n t ISO C la m p in g energy L ogic Level Input

dip switch ece

Abstract: AM7942JC EL 14v 4c
Contextual Info: P R E L IM IN A R Y Am7942 Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • P ro g ra m m a b le c o n s ta n t c u rre n t feed T ip o p e n sta te fo r g ro u n d s ta rt lin e s ■ R ece ive c u rre n t g a in = 200

Contextual Info: SIEMENS IL201/IL202/IL203 PHOTOTRANSISTOR OPTOCOUPLER FEATURES P a c k a g e D im e n sio n s in In c h e s m m • H ig h C u rre n t T ra n s fe r R atio, 7 5% to 4 50 % • M in im u m C u rre n t T ra n s fe r R atio, 10% ILI .- Anode [_]_ IM« (<. ,Vj)

LR300

Abstract: ge scr package siemens rs 248
Contextual Info: SIEMENS H11C4/H11C5/H11C6 PHOTO SCR OPTOCOUPLER Advance Data Sheet FEATURES Package Dimensions in Inches mm • T u rn O n C u rre n t ( 1 ^ 5.0 m A T y p ic a l t • G a te T rig g e r C u rre n t (lGT), 20 |iA T y p ic a l • S u rg e A n o d e C u rrent, 5.0 A

IRF232

Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
Contextual Info: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re

ediswan

Contextual Info: ES 75 POWER AMPLIFIER R A T IN G . Filament V o lta g e . I0'0 Filament C u rre n t Am ps . 4.2 M axim um H.T. Voltage 1,000

Contextual Info: IL400 Photo SCR Optocoupler FEATURES Dimensions in Inches mm T urn O n C u rre n t ( / f t )> 5-0 m A T y p ic a l G a te T rig g e r C u rre n t ( /GT), 20 I3 l jjA S u rg e A n o d e C u rren t, 1.0 A m p B lo ck in g V o ltag e, 4 0 0 V f2l pin one ID

Contextual Info: DATA SHEET ' O C M O S FET PS7241C-AT1 ,PS7241 C-AT5 CURRENT LIMIT TYPE 8-PIN SOP OCMOS FET 2-ch OCMOS FET DESCRIPTION T he P S 7241C -A T1 and P S 7 2 4 1 C -A T 5 are solid state relays con ta in in g a G aA s LED on the light em ittin g side (in pu t side), M O S FETs includ in g cu rre n t con tro l circuit, Photo tra n sisto r on the o u tp u t side. C u rre n t con tro l circ u it of

PCD3323P

Abstract: PCD3323D PC keyboard CIRCUIT diagram PCD3323 PCD3323T keyboard decoder keyboard CIRCUIT diagram
Contextual Info: PC D 3323 _ C -M O S IN TERRUPTED C U R R EN T-LO O P DIALLING CIRCUIT T h eP C D 3 323 is a single ch ip silicori-gate C-MOS integrated c irc u it. It is intended to con vert p u shbutton keyboard entries in to streams o f c o rre c tly -tim e d line c u rre n t in te rru p tio n s. The in p u t data is derived

Contextual Info: Si HARRIS Unear Integrated Circuits • RCA - GE - IN TE R SI L CA3242E M a y 1990 Quad-Gated Inverting Power Driver For In terfacin g L o w -L evel Logic to H igh C u rre n t Loads F eatures: 1 6 -L e a d D u a l-J n -L in e • D riven o u tp u ts capable o f s w itc h in g 600-m A lo a d cu rre n ts

injector

Abstract: injector driver CS-287 injectors injector battery voltage driver injectors CS287 CS288 CS-288 fuel injector
Contextual Info: CS-287/8 INJECTOR SOLENOID DRIVER T h e C S - 2 8 7 / 8 is a m o n o lith ic integrated c irc u it d e sig n e d for m edium c u rre n t s o le n o id d riv e r a p p lic a tio n s. Its ty p ic a l fu nction is to s u p p ly full battery vo lta g e to fuel injector s for rapid cu rre n t

SCR GE C5u

Abstract: scr C203 scr c108 SCR C103 C5U SCR SCR GE C203 GE scr C5u C5U SCR GE 20 watt emergency light circuit emergency light circuit SCR
Contextual Info: GE TYPE JEDEC ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION C3 2N 877-81"1 3 0 -2 0 0 •t r m s :i M a x . R M S on-state cu rre n t (A C103 C 203 - 2 N 5 0 6 0 -6 4 3 0 -2 0 0 30 400 05 0 .8 0 .3 2 * 85 C 0 .5 0 @ 25’ C •t í a v i M a x . average o n-state cu rre n t @ 1 8 0 °

0221B00259

Abstract: GFM-252 LR80793 0221B00187 GFM 250 0221B00541 gfm 353 gfm-353 GFM 375D 0221B01976
Contextual Info: GROUND FAULT CURRENT DETECTION SYSTEMS Model GFM Relay 1.5 to 65 Amp Trip C u rren ts € ) „ « . < 0 - LR80793 ADJUSTABLE OPERATING RANGE: Trip cu rre n ts from 1.5 to 65 Amperes, depending on sensor. Time delay from instantaneous to 36 cycles. INPUT POWER:

TC430

Contextual Info: EDISWAN ESU II5 HALF-WAVE MERCURY VAPOUR RECTIFIER G ENERAL The ESU 115 is a directly heated high voltage half-wave m ercury vapour rectifier, which has been designed fo r use in radio relay amplifiers. R A T IN G Filament Voltage volts Filament C u rre n t (amps)

PCD3320P

Abstract: PCD3320D PCD3320 keyboard matrix 8 x 18 keyboard decoder keyboard CIRCUIT diagram
Contextual Info: PC D 3320 J V_ C -M O S IN TER R U PTED C U R R E N T -L O O P D IALLING CIRC UIT The PCD3320 isa s in g le c h ip s ilic o n -g a te C-MOS integrated c irc u it. It is intended to con vert pu shbutton keyboard entries in to streams o f c o rre c tly -tim e d line c u rre n t in te rru p tio n s. The in p u t data is derived

ABG10

Abstract: RXKB-1 rxme1 RXMH-2 CATALOGUE SK 63-1 E RXK026 RXTNF11 RXMH2 tr bc 337 rxma1
Contextual Info: Catalogue RK 85-18 E ASEA Edition 1 A p ril 1978 Reclosing relay type RAABA For lines with delayed overcurrent protection Two-shot reclosing • Intended to be used together with delayed ove: cu rre n t relay with a sta?:~ ing co n ta ci which gives the starting

PCD3324P

Abstract: 3x4 keyboard VF01 DF320 MT4320 PCD3324 PCD3324D TB65 A 102G 38T5
Contextual Info: PC D 3324 J V_ C -M O S IN T E R R U P T E D C U R R E N T -L O O P D IA L L IN G C IR C U IT The PCD3324 is a single ch ip silicon-gate C-MOS integrated c irc u it. It is intended to con vert pu shbutton keyboard entries in to streams o f c o rre c tly -tim e d line c u rre n t in te rru p tio n s . The in p u t data is derived

Ediswan

Abstract: TC430
Contextual Info: ESU115 EDISWAN E S U II5 HALF-WAVE MERCURY VAPOUR RECTIFIER GENERAL The ESU 115 is a directly heated high voltage half-wave m ercury vapour rectifier, which has been designed for use in radio relay amplifiers. R A T IN G Filament Voltage volts Filament C u rre n t (amps)

Contextual Info: DS1687/DS3687 £3 National ÆÆ Semiconductor DS1687/DS3687 Negative Voltage Relay Driver General Description The D S 16 8 7 /D S 36 8 7 is a high v o lta g e /c u rre n t negative voltage relay driver having m any features not available in present relay drivers.

LM311

Abstract: ic lm311 circuit diagram LM311 application notes SLCS007A LM311DBLE LM311T LM111 fk package
Contextual Info: LM111, LM211, LM311, LM311Y DIFFERENTIAL COMPARATORS WITH STROBES SLCS007A-SEPTEMBER 1 9 7 3 - REVISED FEBRUARY 1992 LM111 . . . J PACKAGE Fast Response Times TOP VIEW Strobe Capability Maximum Input Bias C u rre n t. . . 300 nA NC[ EMIT O U T [ IN + [ IN -[

4000B cmos

Contextual Info: 9664 9374 MOS TO LED DIGIT DRIVER DECODER/DRI VER/LATCH CMOS TO 7-SEGMENT LED DISPLAY Reference: F a irch ild 9 6 6 4 D ata Sheet (Reference: F a irch ild 9 3 7 4 D ata Sheet) This driver is ideal fo r driving high cu rre n t devices such as LEDs, relays

udn2987a

Abstract: 2987A C 2987A
Contextual Info: UDN-2987A 8-CHANNEL SOURCE DRIVER UDN-2987A 8-CHANNEL SOURCE DRIVER With O ve r-C u rre n t Protection FEATURES • • • • • • 350 mA Output Source Current Over-Current Protected Internal Ground Clam p Diodes Output Breakdown Voltage 35 V, Minimum