08TAIN Search Results

IRF232

Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
Contextual Info: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re

C11371

Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Contextual Info: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub­ sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition

Contextual Info: EIFIC SERIES 746 Example Part Number 746 - 070 - 525 - Ç 01 S e rie s _ Z U Total Number of Contacts Contact C o d e _ Contact Rows & Card Slot Depth Insulator Options _ Series 746 Total Num ber o f C ontacts

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

1RFP240

Abstract: IRFP240 IRFP241 IRFP243 1fp2 irf 4710 IRFP 450 IRFP242 Part number 543 20 018 00 c485
Contextual Info: INTERNATIONAL RECTIFIER HE D 1 4055455 OOGfi734 Data Sheet No. PD-9.444B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IÖ R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP240 IRFP241 IRFPS42 IRFP243 N-CHANNEL Product Summary 200 Volt, 0.18 Ohm HEXFET

NATIONAL 620

Contextual Info: THIS OfiAMNS IS THE PROPERTY OF NATIONAL S E M I C W O U C T W C O g M B A T I O N . NO USE THEREOF SHALL BE HADE OTHER THAN AS A REFERENCE FOR PROPOSALS AS SUBMITTED TO NATIONAL SEMICONDUCTOR CORPORATION FOR JOBS TO BE EXECUTED IN CONFOBWITY WITH SUCH PROPOSALS UNLESS T*« CONSENT OF SAID NATIONAL SEMICONDUCTOR CORP­

9436a

Abstract: IRF P-Channel FET 100v K34 mosfet diode sy 171 fg 100al 34 14 IRFG6110 IRFG6113 SS452 628 he KJJ 15
Contextual Info: 11E 0 | MÔSS452 INTERNATIONAL aOOSbMb 1 | Data Sheet No. PD-9.436A RECTIFIER INTERNATIONAL RECTIFIER TOR IRFG6110 HEXFET TRANSISTORS COMBINATION N ANO P CHANNEL C2 EACH POWER MOSFETs IRFGS113 14 LEAD DUAL-IN-LINE PACKAGE SIDE BRAZE) Features: 100 Volt, 0.8 Ohm (N-Channel) and

E13007

Abstract: E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 je13007 mj 13007 transistor E 13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

2N6757

Contextual Info: HE 0 | MflSSMSE 00GT3Gb 0 | Data Sheet No. PD-9.334D INTERNATIONAL R E C T I F I E R in t e r n a t io n a l r e c t if ie r TOR T-39-11 HEXFETTRANSISTGRS *JANTXV2N6758 *JANTX2N6758 JEDEC REGISTERED IM-GHAIMIMEL G POWER MQSFETs SN6758 SIVI6757 ‘ QUALIFIED TO MIL-S-19500/542

IRF 543 MOSFET

Abstract: Diode c514 irf 9540A irf 2030 IRF 511 MOSfet 9540A irfp254 IRFP255 C514 fiat irf 2030 n
Contextual Info: HE D § 4055452 INTERNATIONAL r - J r - fiT □□□Ö75Ö 7 | Data Sheet No. PD-9.540A RECTIFIER TOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS • o IRFPS54 IRFP255 N-CHANIMEL Product Summary 250 Volt, 0.14 Ohm HEXFET

IRFF131

Abstract: IC 3909 G-337 G337 diode 341F IRFF130 IRFF132 IRFF133 g337 ir mosfet 337
Contextual Info: 11E D I 4ÖSS4S2 0001350 7 | i n t e r n a t i o n a l Data Sheet No. PD-9.341F r e c t i f i e r INTERNATIONAL RECTIFIER IÖR T-39-09 HEXFET TRANSISTORS IRFF130 IRFF131 IRFF132 IRFF133 N-CHANNEL POWER MOSFETs T Ü -3 9 PACKAGE 100 Volt, 0.18 Ohm HEXFET

CH35Q

Abstract: G325 205AP G-324 International Rectifier 326 08TAIN irff110
Contextual Info: H E 0 I 4055 452 GOG^fc, 0 | Data Shfeet No. PD-9.343F I NTERNATIONAL RECTIFIER - 3 f INTERNATIONAL RECTIFIER T O R HEXFET'TRANSISTOHS IRFFTIO IRFF111 N-CHANNEL POWER MOSFETs IRFF1 1 2 TO-3 9 PACKAGE IRFF1 1 3 Features: 100 Volt, 0.6 Ohm HEXFET The HEXFET® technology is the key to International

G331

Abstract: pj 86 diode irff120 g-331 G 331 G333
Contextual Info: 11Ê D I MÖ55MS2 GGÜIBSH b | Data Sheet No. PD-9.342F INTERNATIONAL RECTIFIER I«R INTERNATIONAL RECTIFIER HEXFETTRANSISTORSIRFF120 IRFF12*! IM-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF1SS 4 1 IRFF123 Features: 100 Volt, 0.30 Ohm HEXFET T h e H E X F E T ® technology is the key to International