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    RS 3060 CJ Search Results

    RS 3060 CJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PTH03060YAST
    Texas Instruments 10 A 3.3-V Input Bus Termination Power Module for DDR/QDR Memory 10-Surface Mount Module -40 to 85 Visit Texas Instruments
    M38510/30605B2A
    Texas Instruments 8-Bit Parallel-Out Serial Shift Registers 20-LCCC -55 to 125 Visit Texas Instruments Buy
    M38510/30602BEA
    Texas Instruments 4-Bit Parallel-Access Shift Registers 16-CDIP -55 to 125 Visit Texas Instruments Buy
    TPS43060RTER
    Texas Instruments Low Iq, 58V, Synchronous Boost Controller w/ Wide Input Voltage & 7.5V Gate Drive for Standard FETs 16-WQFN -40 to 150 Visit Texas Instruments Buy
    TPS63060DSCR
    Texas Instruments 2.5V to 12V input voltage, 93% Efficient, 2.25A Switch Current Limit, Buck-Boost Converter 10-WSON -40 to 85 Visit Texas Instruments Buy

    RS 3060 CJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    rs 3060 cj

    Abstract: triode rs 3060 cj RS3060CJ thales thales p rs tube
    Contextual Info: INDUSTRIAL RF HEATING RS 3060 CJ Water-cooled triode 120 kW Output power: 120 kW in CW mode Anode voltage: 14 kV Anode dissipation: 40 kW max. Frequency up to 100 MHz INDUSTRIAL RF HEATING The RS 3060 CJ is a RF power triode designed specifically for industrial


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    str f 6456

    Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
    Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH


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    09-Dec-96 str f 6456 str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC PDF

    rs 3060 cj

    Abstract: thales ITK 200-1 RS3026CL itl 12-1 itk 120-2 thales ITL 12 thales itl 15-2 rs 3026 cj itl 5-1 thales
    Contextual Info: INDUSTRIAL RF HEATING Ceramic-metal triodes RF HEATING QUALITY T hales Electron Devices’ Furthermore, these tubes are fully expertise in power grid tube c o m p a t i b l e w i t h c o m m e rc i a l technology makes us today's leader standards and can be easily


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    rs3300cj

    Abstract: RS3060CJ RS3021CJ RS3040CJ Q52-X3150 rs 1023 RS3150CJ Q51X1054 RS3010CL Q52-X3026
    Contextual Info: Special-Purpose Tubes Special-purpose tubes are preferably used in RF/AF amplifiers, for pulse operation, modulation, in VHF and TV transmitters as well as for industrial heating. Type ! Q r ii^ 'n g r o d e ] P ric e e a c n !i + ; 5• - 1. RS 1002 A


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    RS1Q26 RS3010CJ RS3021CJ 3026a RS3040CJ RS3060CJ RS3300CJ Q54-X1CX32 Q54-X1003 Q54-X1006 Q52-X3150 rs 1023 RS3150CJ Q51X1054 RS3010CL Q52-X3026 PDF

    MLP7122

    Contextual Info: Silicon Limiter Diodes • Low Loss The Aeroflex / Metelics MLP-7100 Series Limiter diodes are specially processed PIN diodes with a thin intrinsic region designed for use in passive or active limiters over the entire range of frequencies from 100 MHz to beyond 20 GHz. The different “I”


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    MLP-7100 MLP71 MLP7100 MLP7101 MLP7102 MLP7122 PDF

    MLP7110

    Abstract: MLP7100 CHIP MLP7100 MicroMetrics MLP7130 limiters MLP7122 MLP7101 MLP7112 MLP7130 MLP7121
    Contextual Info: Limiter Diodes Description The MicroMetrics MLP 7100 series Limiter diodes are specially processed PIN diodes with a thin intrinsic region designed for use in passive or active limiters over the entire range of frequencies from 100 MHz to beyond 20 GHz. The different “I” region thicknesses and capacitances provide variable threshold and leakage power levels and power handling capability.


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    MLP7100

    Abstract: MicroMetrics MLP7130 MLP7121 MLP7122 MLP7120 MLP7101 MLP7102 MLP7110 MLP7111 MLP7112
    Contextual Info: Control Devices: MLP 7100 Series Limiter Diodes Applications The MLP 7100 series limiters are for use in waveguides, coax, microstrip or stripline. Single or cascade devices may be used depending on power levels. Features • Low Loss • Greater Bandwidth


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    MLP7121

    Abstract: MicroMetrics MLP7130 MLP7100 MLP7101 MLP7102 MLP7110 MLP7111 MLP7112 MLP7120 MLP7130
    Contextual Info: Limiter Diodes Description The MicroMetrics MLP 7100 series Limiter diodes are specially processed PIN diodes with a thin intrinsic region designed for use in passive or active limiters over the entire range of frequencies from 100 MHz to beyond 20 GHz. The different “I” region thicknesses and capacitances provide variable threshold and leakage power levels and power handling capability.


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    Contextual Info: RHRG3040, RHRG3050, RHRG3060 h a r r is S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft R ecovery.<40ns • Operating T em p eratu re. +175°C


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    RHRG3040, RHRG3050, RHRG3060 O-247 100oC PDF

    siemens rs 3300 cj

    Abstract: siemens rs 3060 cj B57820-M561-A5 7835 thyristor B57820 44071 thyristor P 2346 B57364 S 364 SIEMENS THYRISTOR NTC Siemens
    Contextual Info: B57364 S 364 Inrush Current Limiting Applications 7 max • Switch-mode power supplies • Soft-start motors,•e g in vacuum cleaners Features • • • • • • Useable in series connections up to 265 Vrms Coated thermistor disk Kinked leads of tinned, copper wire


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    B57364 E69802) siemens rs 3300 cj siemens rs 3060 cj B57820-M561-A5 7835 thyristor B57820 44071 thyristor P 2346 B57364 S 364 SIEMENS THYRISTOR NTC Siemens PDF

    NTC Thermistor S 234

    Abstract: CI 3060 elsys B57234S479M B57234-S220-M NTC Inrush Current Limiters Thermistor B57234S221M ntc thermistors for inrush current limiting B57234-S109-M NTC 4,7 S M B57234-S509-M
    Contextual Info: o inrush Current Limiting B 57234 S 234 Applications 7 max • Inrush current limiting in peripheral communication equipment, monitors, PCs, etc. • Soft-start motors, e.g. in vacuum cleaners • Circuit applications requiring high continuous currents • Useable in series connection up to 245 Vrms


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    TNT0035-Y NTC Thermistor S 234 CI 3060 elsys B57234S479M B57234-S220-M NTC Inrush Current Limiters Thermistor B57234S221M ntc thermistors for inrush current limiting B57234-S109-M NTC 4,7 S M B57234-S509-M PDF

    3045 PT

    Abstract: MBR30150PT CI 3060 elsys 2sc 2026 304S MBR3035PT rfltw
    Contextual Info: E MBR3035PT- MBR30150PT TAIWAN SEMICONDUCTOR RoHS [Pb 30.0 AMPS. Schottky Barrier Rectifiers TO-3P/TQ-247AD C O M P L IA N C E m Features ❖ P la s tic m a te ria l u s e d ca rrie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s 94V -Q '> Metal silicon Junction, m ajority c a rrlc r conduct on


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    MBR3035PT MBR30150PT P/TQ-247AD MBR3035PTTHRU MBR30150PT) kR33A9CFTÂ 3045 PT MBR30150PT CI 3060 elsys 2sc 2026 304S rfltw PDF

    Contextual Info: KS0090B 26 COM / 64 SEG DRIVER & CONTROLLER FOR STN LCD APR IL 1999. KS0090B 26COM/64SEG DRIVER & CONTROLLER FOR STN LCD CONTENTS


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    KS0090B 26COM/64SEG PDF

    ABM30

    Contextual Info: BEAM LEAD SCHOTTKY BARRIER MIXER DIODES A SI’s Beam Lead Schottky Barrier Mixer Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to form a junction. These diodes are designed for applications up to 40 GHz for microwave integrated circuits and hybrid ele­


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    -10dBm 10dBm 15dBm 20dBm ABM30 PDF

    30100 PT

    Abstract: SR30150 SR3020PT sr 3060 sr3015 SR3090PT
    Contextual Info: E SR3020PT -SR30150PT TAIWAN SEM ICONDUCTO R 30.0 AMPS. Schottky Barrier Rectifiers RoHS m C O M P L IA N C E ^ E lI & 2 4 J A D .rai/.ig* . f r f i 1M| ja w ' , i— i - 44- •> ■'ir <■ i n jjPVY«V 71.3| VTYi3j Dual rectifier con s tru c tio n . positive ce nter-ta p


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    SR3020PT SR30150PT 26tir 20PTTHRU SR30150PT) 30100 PT SR30150 sr 3060 sr3015 SR3090PT PDF

    "Advanced Semiconductor, Inc"

    Abstract: ADVANCED SEMICONDUCTOR ABP1 ABL9001
    Contextual Info: 02 58354 A D V A N C E D S E M I C O N D U C T O R ADVANCED SEM ICO ND UC TOR 92D 00100 Ì2 D Ó-f DE|G25fl35M GD0 Q1DG t. | BEAM LEAD SCHOTTKY BARRIER MIXER DIODES A SI’s Beam Lead Schottky Barrier Mixer Diodes are 'manufactured by the deposition of a suitable barrier


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    D25A35M 00QQ10D -10dBm 10dBm 15dBm "Advanced Semiconductor, Inc" ADVANCED SEMICONDUCTOR ABP1 ABL9001 PDF

    k30a

    Contextual Info: s TAIWAN SEMICONDUCTOR M BR F3035CT - M B R F3G150CT Isolated 30.0 AMPS. Schottky Barrier Rectifiers RoHS IT0-220AB CO M PLIANCE Features <r <• <• -v<• -v-v-v- UT.Z.lìi .il ¿¿»•.vu/ U9edcanrie9 P la 9 lio m a te r ia l U n c e iw r it e r s L a b o r a to r y


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    F3035CT F3G150CT IT0-220AB k30a PDF

    frequency multiplier X3

    Contextual Info: Selection Guide for Multiplier Diode SELECTION GUIDE FOR MULTIPLIER DIODES When selecting SRD, Dual Mode or variable capacitance varactors for a multiplier, first determine the following for the multiplier circuit: 1 Output Frequency f0) 2) Input Frequency


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    p0402fc

    Abstract: P0402FCxxC Series
    Contextual Info: 05107 P0402FC3.3C - P0402FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed


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    P0402FC3 P0402FC36C P0402FCxxC p0402fc P0402FCxxC Series PDF

    Contextual Info: 05107 P0402FC3.3C - P0402FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed


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    P0402FC3 P0402FC36C P0402FCxxC PDF

    0402 solder mask

    Contextual Info: 05139 LC0402FC3.3C - LC0402FC36C Only One Name Means ProTek’Tion 200W LOW CAPACITANCE flip chip tvs array Description The LC0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.


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    LC0402FC3 LC0402FC36C LC0402FCxxC 0402 solder mask PDF

    Contextual Info: 05107 P0402FC3.3C - P0402FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed


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    P0402FC3 P0402FC36C P0402FCxxC PDF

    LC0402FC05C

    Abstract: LC0402FC08C LC0402FC12C LC0402FC15C LC0402FC24C
    Contextual Info: 05139 LC0402FC3.3C - LC0402FC36C Only One Name Means ProTek’Tion 200W LOW CAPACITANCE flip chip tvs array Description The LC0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.


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    LC0402FC3 LC0402FC36C LC0402FCxxC LC0402FC05C LC0402FC08C LC0402FC12C LC0402FC15C LC0402FC24C PDF

    Contextual Info: 05107 P0402FC3.3C - P0402FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed


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    P0402FC3 P0402FC36C P0402FCxxC PDF