RS 434 071 Search Results

R113 151 000

Abstract: SMA 905 ferrule R213 r113 664 000 R282 235 003 ASSEMBLY INSTRUCTIONS Radiall crimp 02 r213 665 000w ASSEMBLY INSTRUCTIONS Radiall mcx SMA 906 ferrule dimensions ASSEMBLY INSTRUCTIONS Radiall
Contextual Info: RS 547-776 RS 547-770 RS 547-760 RS 547-764 RS 547-754 MCX/MMBX CONTENTS PAGE MCX General . 4 Interface. 5

ATMEL 708

Abstract: MIL-STD-454L Atmel 434 SF1411 6822 TRANSISTOR equivalent 5 input nand gate atmel 206 CMOS GATE ARRAYs m38510 1076 ATL100
Contextual Info: ju > j î o MB Features • 0.8 p. effective gate lengths (1.0 ^ drawn combined with close metal spacing provides outstanding speed/power performance • There is no new software to learn with Atmel's flexible design system • Design translation of existing ASIC, PLD and FPGA designs

2E104

Abstract: E104K SH-E 878
Contextual Info: Polypropylene Capacitor Plastic Film Wrap, Epoxy End Fill Type PT12 T yp e P T12 p o lyp rop ylene precision cap a cito rs w hich e xh ib it unique and o u ts ta n d in g e le c tric a l and e n viro n m e n ta l ch a ra c te ris tic s . The fo llow in g are som e o f the m ost significa nt:

Contextual Info: 10 13 71 an MATERIALS AND FINISHES BODY ZINC ALLOY P LA T E D NICKEL CENTER CONTACT PHOSPHOR BRONZE BNC JACK P LA T E D GOLD/TIN INTERFACE 9.65 _ REF- '.3 8 0 TOP VIEW INSULATOR POLYPRO PYLENE j ~ ~ l 11.02 REF 8,60 .434 .339 0 H ref 13.00 3 .8 0 ± 0 .0 5

MA4T64400

Abstract: low noise transistors MA4T645 MA4T644
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t

MFC04

Abstract: LHL06 TB 222 L CM04RC04 RBU04 MFCN08 BU05MC02T RQC05 rcc05 CM04RC01 UCN033
Contextual Info: Packaging Index SM D :TA PE& REEL WB PRODUCTS 5 v 9 □ > = r 'y ^ M ULTILAYER CERAM IC CAPACITO RS R S i i r ^ 5 v 0 3 y ;f y J& TUBULAR TYPE CERAMIC CAPACITORS ▲ Æ m # A • WOUND CHIP INDUCTORS M ULTILAYER CHIP INDUCTORS M ULTILAYER CHIP INDUCTORS

DESC 87106

Contextual Info: Metuchen C “We Offer Quick Solutions to Noise Pollution” 1-800-679-0516 1-800-679-9959 www.metcaps.c Sw itchm ode Pow er Supply C a p a cito rs S M P S D S C C Dwg. 87106 E — Code Dim A M axi/ Dim B Max 3/ 1 2 3 4 5 6 .650 .650 .650 .650 .650 .650

WJ-A78

Contextual Info: uuU A78 / SMA78 5 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE: +114 dB/1 MHz HIGH OUTPUT: +19.0 dBm TYR HIGH THIRD ORDER IP: +35 dBm (TYR) LOW NOISE FIGURE: 3.5 dB (TYR) IB Outline Drawings A78 Specifications*

Contextual Info: S i GEC P L E S S E Y PRELIMINARY INFORMATION S E MI CO NDU CT O RS KESTX01 400MHz - 460MHz ASK TRANSMITTER The KESTX01 is a single chip ASK Amplitude Shift Key transmitter IC. It is designed to operate in a variety of low power radio applications including keyless entry, general

4511 gm

Abstract: TTC 5200 ir 8707 nte 6250 76722 8840 TIC 1260 stoneridge se 5000 x4202 STR G 6352 SG 3425 N
Contextual Info: ülmEE Distributors W I R E L E S S 4 fiC Europe Austria SPO ERL E ELE C TR O N IC Am K ehlerpark 1 6850 D ornbirn Tel: 43 5572 38 65 0 0 -0 Fax: 43 5572 38 65 0 0 -9 0 A rrow D enm ark A/S S m edeholm 13 A 2730 Herlev Tel: 45 44 50 82 00 Fax: 45 44 50 82 03

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

NE42484A

Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

NE33284A

Abstract: NE33284A-SL NE33284AS
Contextual Info: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

NE33284AS

Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

Contextual Info: CMOS SRAM KM79C86 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 b it S ynchronous S ta tic Ran­ dom A cce ss M em ory designed to sup port high speed

TWS 434 pin diagram

Abstract: SRAM timing
Contextual Info: CMOS SRAM KM79C86 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 b it S ynchronous S ta tic Ran­ dom A cce ss M em ory designed to sup port high speed

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

B1107

Abstract: dupont delrin 507 k4070 B2213-01 P-C2616-14 k4110 c4229 F-41408-UG F-41811-UG P-41811-UG
Contextual Info: Section 6. Standard Pot Core Sizes and Accessories 3x2 DIMENSIONS inches A B 2B D .155 ± .003 .0375 ± .002 .075 ± .004 .0175 min. mm 3.94 ± .08 .953 ± .05 1.91 ± .10 .445 min. mm inches 2D E F G .035 min. .115 min. .057 max. .032 ± .004 .889 min. 2.92 min.

59012 h 331

Contextual Info: r to 61 41 65 45 = = = = 1% 1% 5% 5% Tol. Tol. Tol. Tol. on a miniReel in a miniBag on a miniReel in a miniBag Size Code 2 3 5 6 = = = = 0402 0603 0805 1206 Dimensions L x W : 7 = 1210 8 = 2010 9 = 2512 C ase Resistor value Code in £1 — { Use code from product chart)

Contextual Info: TH7122 27 to 930MHz FSK/FM/ASK Transceiver Features ! Single chip solution with only a few external components ! Stand-alone fixed-frequency user mode ! Programmable multi-channel user mode ! Low current consumption in active mode and very low standby current

TH7122.2

Abstract: 125khz RFID schematic TH7122
Contextual Info: TH7122 27 to 930MHz FSK/FM/ASK Transceiver Features ˆ Single chip solution with only a few external components ˆ Stand-alone fixed-frequency user mode ˆ Programmable multi-channel user mode ˆ Low current consumption in active mode and very low standby current

transistor SMD n03

Abstract: smd cookbook Datasheet of 7492 IC TPMS transceiver BBY65 CDSCB10M7GA136 HC49 SFECF10M7HA00 TH7122 TH71221
Contextual Info: TH71221 27 to 930MHz FSK/FM/ASK Transceiver Features ! Single chip solution with only a few external components ! Stand-alone fixed-frequency user mode ! Programmable multi-channel user mode ! Low current consumption in active mode and very low standby current

Contextual Info: TH7122 27 to 930MHz FSK/FM/ASK Transceiver Features 1 Single chip solution with only a few external components 1 Stand-alone fixed-frequency user mode 1 Programmable multi-channel user mode 1 Low current consumption in active mode and very low standby current