RUR8100 Search Results

MUR8100

Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

RUR8100

Abstract: MUR8100 MUR8100E RURP8100
Contextual Info: MUR8100E, RURP8100 in te rd i Data Sheet Ja nu a ry 2000 File N u m b e r 2 7 8 0 .4 8A, 1000V Ultra fast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes • Ultrafast with Soft Recovery .<75ns • Operating Temperature. 175°C

MU8100

Contextual Info: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

Diode MUR880E

Abstract: RUR880 MUR890E RUR8100 MUR870E MUR8100E MUR880E RUR870 RUR890 LF 1A
Contextual Info: MUR870E, MUR880E, MUR890E MUR8100E, RUR870, RUR880 0042377 2Tb « H A S RUR8909 RUR8100 HARRIS SbE D H302271 8A Ultrafast Diode With Soft Recovery Characteristic M a y 1991 HARRIS SEMICON] SECTOR ~ Q 3 ~ 1 7 Package r e m u ra n T O -2 2 0 A C TOP VIEW • Ultrafast with Soft Recovery Characteristic

MU8100

Abstract: MUR8100E MU810 RUR8100
Contextual Info: MUR8100E, RURP8100 March 2001 Data Sheet Features 8 A, 1000 V Ultrafast Diodes • Ultrafast Recovery trr = 100 ns @ IF = 8 A The RUR8100 is an Ultrafast Diode with low forward voltage drop. This device is intended for use as freewheeling and clamping Diodes in a variety of switching

Contextual Info: MUR8100E, RURP8100 November 2013 Data Sheet Features 8 A, 1000 V Ultrafast Diodes • Ultrafast Recovery trr = 100 ns @ IF = 8 A The MUR8100E, RUR8100 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching

MUR8100

Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride

MU8100

Abstract: 200a gto preliminary MUR8100E RUR8100 RURP8100 100a 1000v GTO
Contextual Info: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

MUR8100

Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride

RURP8100CC

Contextual Info: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted

1334 diode

Abstract: RURP880CC RURP8100CC RURP870CC RURP890CC
Contextual Info: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S E M I C O N D U C T O R 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <85ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

RURP8100CC

Abstract: IGBT 1000V .200A
Contextual Info: RURP8100CC Data Sheet January 2002 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

CTX12SL

Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4

CTX12S

Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40

RURP880CC

Contextual Info: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S em iconductor 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Package Features • Ultrafast with Soft Recovery. <85ns JEDEC TO-220AB • Operating

CTX12S

Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

RURP880

Contextual Info: hßA R m S ' — MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Aprii 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE • +175°C Rated Junction Temperature

transistor 700v

Abstract: RURP880 MUR890E transistor 800V 1A RUR880
Contextual Info: m M A D D IQ 3 j MUR870E, MUR880E, MUR890E MUR8100E, RURP870, RURP880 RURP890, RURP8100 8A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features JEDEC TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic (tRR < 75ns • +175°C Rated Junction Temperature

ULTRAFAST SOFT RECOVERY RECTIFIER

Abstract: RURP8100CC
Contextual Info: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

ctx12s

Abstract: CTX12SL BYV10-40 equivalent CTX-12SL STPS3100 FMPG3F BYT200PIV400 EQUIVALENT BYD33D BYW29-200 equivalent STPS10100
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4

STPS30S45CT

Abstract: CTX12S STPS30S45 CTX12SL BYV42-200 D20LC20 Diode Equivalent DSEK60-02A stth3003cg stth3003cw CTL22S
Contextual Info: Rectifiers Selection guide February 2005 STMicroelectronics - February 2005 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.