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    MUR870E Search Results

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    MUR870E Price and Stock

    Rochester Electronics LLC MUR870E

    DIODE STANDARD 700V 8A TO220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MUR870E Bulk 1,283 384
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.78
    • 10000 $0.78
    		Buy Now

    Harris Semiconductor MUR870E

    MUR870E
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MUR870E 1,042 399
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.7814
    • 10000 $0.6966
    		Buy Now
    Rochester Electronics MUR870E 1,283 1
    • 1 -
    • 10 -
    • 100 $0.7531
    • 1000 $0.6251
    • 10000 $0.5573
    		Buy Now

    Motorola Semiconductor Products MUR870E

    RECTIFIER DIODE,700V V(RRM),TO-220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MUR870E 30
    • 1 $3.12
    • 10 $2.08
    • 100 $1.56
    • 1000 $1.56
    • 10000 $1.56
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    MUR870E Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    MUR870E
    		Harris Semiconductor 8A, 700V - 1000V Ultrafast Diodes Original PDF 40.08KB 3
    MUR870E
    		Harris Semiconductor Ultrafast Recovery Rectifier Original PDF 32.11KB 2
    MUR870E
    		Motorola Switchmode Datasheet Scan PDF 46.33KB 1
    MUR870E
    		Motorola Switchmode Power Rectifiers Scan PDF 147.16KB 4
    MUR870E
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 42.59KB 1

    MUR870E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mur 4060

    Contextual Info: DIGITRON SEMICONDUCTORS MUR870E-MUR8100E 8A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating MUR Symbol Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current Rated VR 870 880 890 8100 700


    Original     		MUR870E-MUR8100E MIL-PRF-19500, mur 4060 PDF

    UR880

    Abstract: RURP880 890E 870e 880e
    Contextual Info: MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 HARRIS S E M I C O N D U C T O R 8A, 700V - 1000V Ultrafast Diodes A p ril 1 9 9 5 Package Features • Ultrafast with Soft Recovery Characteristic tRR < 75ns JE D E C TO -220A C ANODE


    OCR Scan     		MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 -220A UR880 RURP880 890E 870e 880e PDF

    RURP880

    Abstract: MUR890 MUR870E MUR870 MUR890E RUR880 MUR880E MUR880 MUR8100E RUR870
    Contextual Info: S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE o CATHODE • +175 C Rated Junction Temperature


    Original     		MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 O-220AC RURP880 MUR890 MUR870E MUR870 MUR890E RUR880 MUR880E MUR880 MUR8100E RUR870 PDF

    RURP880

    Contextual Info: hßA R m S ' — MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Aprii 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE • +175°C Rated Junction Temperature


    OCR Scan     		MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 O-220AC RURP880 PDF

    Diode MUR880E

    Abstract: RUR880 MUR890E RUR8100 MUR870E MUR8100E MUR880E RUR870 RUR890 LF 1A
    Contextual Info: MUR870E, MUR880E, MUR890E MUR8100E, RUR870, RUR880 0042377 2Tb « H A S RUR8909 RUR8100 HARRIS SbE D H302271 8A Ultrafast Diode With Soft Recovery Characteristic M a y 1991 HARRIS SEMICON] SECTOR ~ Q 3 ~ 1 7 Package r e m u ra n T O -2 2 0 A C TOP VIEW • Ultrafast with Soft Recovery Characteristic


    OCR Scan     		MUR870E, MUR880E, MUR890E MUR8100E, RUR870, RUR880 43Q2271 0G42377 RUR890, RUR8100 Diode MUR880E RUR880 RUR8100 MUR870E MUR8100E MUR880E RUR870 RUR890 LF 1A PDF

    transistor 700v

    Abstract: RURP880 MUR890E transistor 800V 1A RUR880
    Contextual Info: m M A D D IQ 3 j MUR870E, MUR880E, MUR890E MUR8100E, RURP870, RURP880 RURP890, RURP8100 8A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features JEDEC TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic (tRR < 75ns • +175°C Rated Junction Temperature


    OCR Scan     		MUR870E, MUR880E, MUR890E MUR8100E, RURP870, RURP880 RURP890, RURP8100 O-220AC transistor 700v transistor 800V 1A RUR880 PDF

    BYW19-1000

    Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
    Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820


    Original     		FO-012 1-800-4-HARRIS BYW19-1000 BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    RURU10060

    Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
    Contextual Info: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.


    Original     		RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 RURU10060 MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010 PDF

    igbt 1000v 80a

    Abstract: 30A, 600v DIODE
    Contextual Info: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,


    OCR Scan     		MUR810, MUR815, MUR820, RURP810, RURP815, RURP820 MUR840, MUR850, MUR860, RURP840, igbt 1000v 80a 30A, 600v DIODE PDF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA PDF

    RURP1S60

    Abstract: RURP880 RURP3080 ULTRAFAST 600V RURG8040 MUR810 MUR1550
    Contextual Info: 5-3 ULTRAFAST SINGLE DIODES Selection Guide Continued HARRIS ULTRAFAST RECOVERY RECTIFIER PRODUCT LINE 2 LEAD TO-247 TO-220AC ' f <AVG) 15A SINGLE LEAD TO-21B •f <AVG> 30A 30A ^F(AVQ) 75A/B0A 50A 50A 75A/80A Vrrm BA 100A 150A 100V MUR810 RURP810 MUR1510 RURP3010 RURG3010


    OCR Scan     		O-220AC O-247 O-21B MUR810 RURP810 MUR815 RURP815 MUR820 RURPB20 MUR840 RURP1S60 RURP880 RURP3080 ULTRAFAST 600V RURG8040 MUR1550 PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    byw81 i 150

    Abstract: BYW30-200 BYW30 BYW30-150 MUR850 D0-203AA BYW30-50 c114e D0203AA designer guide
    Contextual Info: M O TO R O L A SC -CTELECON} " “p - O 3 14E D I t3t.?aS3 0061425 “ C>1 1 | Table 25. Ultrafast Recovery Rectifiers continued * * I q , AVERAGE RECTIFIED FORWARD CURRENT (Am peres) 8 12 221B-01 (TO-220AC) Plastic 56-03 (DO-2Ü3AA) Metal 15 221B-01 (TO-220AC)


    OCR Scan     		221B-01 O-220AC) D0-203AA) 21A-04 T0-220AB) MUR805 MUR810 byw81 i 150 BYW30-200 BYW30 BYW30-150 MUR850 D0-203AA BYW30-50 c114e D0203AA designer guide PDF

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent PDF

    MBR140P

    Abstract: MBR120P MBR130P Motorola MDA962-1 Motorola Schottky 1n5819 MBRD360 1N5818 MBR0520L MBR0530
    Contextual Info: volt test 39.99 0.5 39.99 0.5 39.99 0.5 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 1 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 3 39.99 6 39.99 6


    Original     		MUR8100E MUR1520 MUR1540 MUR1560 MURB1620CT MUR1620CT MUR1640CT MURB1660CT MUR1660CT MUR3040 MBR140P MBR120P MBR130P Motorola MDA962-1 Motorola Schottky 1n5819 MBRD360 1N5818 MBR0520L MBR0530 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    MUR6100E

    Abstract: MUR870E MUR8100E MUR880E MUR890E 150tiF 3268 Diode MUR880E
    Contextual Info: MOTOROLA b4E 5 S E M IC O N D U C T O R • TECHNICAL DATA b 3 h ? ES S DDfibMfiE 470 ■ M 0 T 7 M O TO RO LA SC D I 0 D E S / 0 P T 0 ' M UR870E M UR880E M UR890E M UR8100E S w itc h m o d e P o w e r Rectifiers U ltra fast " E " Se rie s w /H igh Reverse E n ergy C ap ab ility


    OCR Scan     		O-220 MUR870E, MUR880E MUR6100E MUR870E MUR8100E MUR880E MUR890E 150tiF 3268 Diode MUR880E PDF

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 PDF