S 05L Search Results

STP15

Contextual Info: S T P 15 N 0 5 L s t p i 5 N 0 5 LFI S G S -T H O M S O N ¡m e ra « ¿ 57 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP15N 05L S TP15N05LFI dss 50 V 50 V R DS on Id < 0.15 a < 0.15 a 15 A 10 A . TYPICAL RDs(on) = 0.115 Q . AVALANCHE RUGGED TECHNOLOGY

stp45n05l

Contextual Info: STP45N05L STP45N05LFI S G S -T H O M S O N w R Æ fl g ( Ë } e L E ê ? ^ ( ô M ( g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A D V A N C E DATA TYPE STP45N 05L S TP45N 05LFI V dss H D S (o n 50 V 50 V 0 .0 3 5 U 0 .0 3 5 U 45 A 24 A . .

S-8R-10

Abstract: 1S1803R 1S1934 1S1935 S-20-01 S-20-01FR S-8R-08 S-8R-08FR S-8R-10FR S-20R-06
Contextual Info: - 74 M m % ft « Vrsm V S-8R-08 S-8R -08F R S-8R-10 S-8R -10F R S-20 -0 1 S - 2 0 -0 1 F R S—20—02 S - 2 0 -0 2 F R S—20—04 S - 2 0 -0 4 F R S—20—06 S - 2 0 -0 6 F R S—20—08 S - 2 0 -0 8 F R S—20—10 S - 2 0 -1 0 F R S-20R-01 S—20R-01F R

S-20R-06FR

Abstract: 1S1803R 1S1934 1S1935 S-20-01 S-20-01FR S-8R-08 S-8R-08FR S-8R-10 S-8R-10FR
Contextual Info: - 74 M m % ft « Vrsm V S-8R-08 S-8R -08F R S-8R-10 S-8R -10F R S-20 -0 1 S - 2 0 -0 1 F R S—20—02 S - 2 0 -0 2 F R S—20—04 S - 2 0 -0 4 F R S—20—06 S - 2 0 -0 6 F R S—20—08 S - 2 0 -0 8 F R S—20—10 S - 2 0 -1 0 F R S-20R-01 S—20R-01F R

Contextual Info: SUP/SUB75N04-05L Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 75a 0.0065 @ VGS = 4.5 V 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N04-05L

SUB75N04-05L

Abstract: SUP75N04-05L
Contextual Info: SUP/SUB75N04-05L Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 75a 0.0065 @ VGS = 4.5 V 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N04-05L

Contextual Info: ¿57 TYP E S TP32N 05L STP32N 05LFI STP32N05L STP32N05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0 .055 Q. < 0 .055 Q. 32 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY

SUB75N04-05L

Abstract: SUP75N04-05L
Contextual Info: SUP/SUB75N04-05L Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 75a 0.0065 @ VGS = 4.5 V 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N04-05L

SUB75N04-05L

Abstract: SUP75N04-05L
Contextual Info: SUP/SUB75N04-05L Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 75a 0.0065 @ VGS = 4.5 V 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N04-05L

Contextual Info: ¿57 TYP E STP36N 05L S TP36N05LFI STP36N05L STP36N05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

MTP4N05L

Abstract: mtp4n05
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 4N 05L M TP 4N 06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r IM-Channel Enhancem ent-M ode S ilicon G ate TM O S TM O S POWER FETs LOGIC LEVEL 4 AMPERES These Logic Level TM O S Power FETs are designed fo r high

Contextual Info: ULE2S REV. AW MEHSONS ME IN IWK3 IN - P R O C E S S 1 DO NOT S C A L E FROM TH IS PR IN T ORIENT I.D. MARK A S SHOWN (FOR - R A OPTION ONLY) N01ED TIUIUNIZS AB£ ONE PLACE DECIMALS ±.1 [2.54-JTHREE PLACE DECIMALS ± .0 0 5 [.13] ANGLES TWO PLACE DECIMALS ±.Q1 [.25JOUR PLACE DECIMALS ± .Q020 [.05l ±2°

Contextual Info: P.C.B. MOUNTING |^-|+0 05l TOP VIEW CIRCUIT DIAGRAM JTTL c 1 Tolerances: up to 10: ±0.2mm above 10-50: ±0.3mm Date 05/09 Name dr S S P Revised 01/11 dr Modifications Date Name k n itte r-s w itc h 129 T 30 18 12 Page 1 /3 - Specifications: Contact rating:

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

25N05L

Abstract: MTP25N05L MTP25N06L 25N06L mtp25n05l motorola
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M TM 25N 05L M TM 25N 06L M T P 25N 05L M T P 25N 06L D esigner's Data Sheet P o w e r F ie ld E ffe c t T ra n s is to rs N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Pow er FETs are designed fo r h ig h speed p o w e r

p15n05

Abstract: C5443 5N05L 5N05 15N05L 15n05 CS4420 P15N05L
Contextual Info: *57 SGS-THOMSON stp 15no5l ilLiCTIIMDe S T P 1 5 N 05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 15N05L S T P 15N05LFI • . . ■ ■ . ■ ■ V dss R DS on 50 V 50 V < 0.15 a < 0.15 a Id 15 10 A A T Y P IC A L RDS(on) = 0.115 £2

2N06L

Abstract: 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos 12N05L
Contextual Info: *57 S G S -T H O M S O N ilLHCTIIMDe TYPE 2Nosl STD12N06L s t d i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR R DS on Id S T D 12N05L V 50 V < 0.15 a 12 A S T D 12N06L 60 V < 0.15 £2 12 A dss • T Y P IC A L R DS(on) = 0.115 £1

D-713

Abstract: ct-2048
Contextual Info: SN74ACT7203L, SN 74 A C T 7 204L, SN 7 4A C T 7205 L, SN74ACT7206L 2048 x 9, 4096 x 9, 81 92 x 9,1 6384 x 9 A S Y N C H R O N O U S FIRST-IN, FI RST - OUT M E M O R I E S S C A S 226A - FEBRUARY 1993 - REVISED SEPTEMBER 1995 * * DV OR NP P A C K A G E R e a d s and Wri t es Can Be A s y n c h r o n o u s

MAXIM 1535 CE

Contextual Info: TNETX3110 ThunderSWITCH 8/3 ETHERNET™ SWITCH WITH EIGHT 10-MBIT/S PORTS AND THREE 10-/100-MBIT/S PORTS S P W S 0 4 7 A - MARCH 1998 - R EVISED A P R IL 1999 Port Configurations: Eight 10-Mbit/s Ports - Ports Arranged in One Group of Eight Ports in a Multiplexed Interface

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 16Kx 8 DUAL-PORT STATIC RAM FEATURES: • • • M /S = L for B U S Y input o n S la v e T ru e D u a l-P o rte d m e m o ry cells w h ich a llo w s im u lta ­ • In terrupt F lag n e o u s re a d s of th e s a m e m e m o ry location

12RC-L

Contextual Info: TNETX3151 ThunderSWITCH 12/3 ETHERNET™ SWITCH WITH 1210-MBIT/S PORTS AND 310-/100-MBIT/S PORTS S P W S 0 4 8 A - MARCH 1998 - R EVISED A P R IL 1999 Port Configurations: Twelve 10-Mbit/s Ports - Ports Arranged in One Group of Eight Ports and One Group of Four Ports in a

HT 1000-4

Abstract: S-20R-06FR 1S1803R 1S1934 1S1935 S-20-01 S-20-01FR S-8R-08 S-8R-08FR S-8R-10
Contextual Info: - 74 - M m % ft « Vr s m Vrrm V (V) m 15 R £ Vr Io , I f * I FM # m ¿5 f t f t & Éfe iRmax VFtnax 1 FSM m ^- •€■ fife © fë 1Ê ^ m S-8R-08 S-8R -08FR S-8R-10 S-8R -10FR S-20-01 * * * * ‘ y ;ÿ fy 'y fy 'y y y y y ( V) (A) ( ° C> ( A) {°C)

5xxN

Abstract: 72125
Contextual Info: CMOS PARALLEL-TO-SERIAL FIFO 2 56x 16 , 51 2x16, 10 24x16 IDT72105 IDT72115 IDT72125 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • F o ur m e m o ry s ta tu s fla g s: E m pty, Full, H alf-F ull, and A lm o s t-E m p ty /A lm o s t-F u ll

MC88110

Abstract: D110-P TS882 MC88110 architecture RISC TS88100
Contextual Info: THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS88100 32-BIT RISC MICROPROCESSOR DESCRIPTION The TS88100 is the firs t processor in the TS88000 Fa m ily of RISC reduced in s tru c tio n set com puter m ic ro p ro c e s s o rs . Im p le m e n te d w ith T h o m s o n ’ s