S 170 MOSFET Search Results

Contextual Info: n ix Y S HiPerFET Power MOSFET IXFN 170N10 IXFK170N10 VDSS ^D25 100 V 100 V 170 A 170 A p DS on 10 mQ 10 mil Single M O S FE T Die Symbol Test Conditions VDSS v TCB Tj Tj VGS v GSM Continuous Transient Us ® u ® Ur Tc Tc Tc Tc Maximum Ratings IXFK IXFN

diode 47c

Contextual Info: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 47 C 170 I 1700 SKCD 47C 170 I 6,9x6,9 mm; 42 A4); 1700V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 6 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)

Contextual Info: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 61 C 170 I 1700 SKCD 61C 170 I 7,8 x 7,8 mm; 51 A4); 1700 V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 8 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)

Contextual Info: SSS3402A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 60 @VGS = 10V 25V G 3A 80 @VGS = 4.5V S 170 @VGS = 2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S

Contextual Info: Analog Power AM3472N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = 10V 185 @ VGS = 5.5V ID(A) 2.9 2.7 Typical Applications:

Contextual Info: Analog Power AM4528C P & N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 28 @ VGS = 4.5V 30 18 @ VGS = 10V 250 @ VGS = -2.5V -20 170 @ VGS = -4.5V These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures

Contextual Info: Analog Power AM90P20-170B P-Channel 200-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -200 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = -10V 200 @ VGS = -5.5V ID (A) -34 -32 Typical Applications:

384B

Contextual Info: SiE802DF New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a Silicon Limit Package Limit 0.0022 @ VGS = 10 V 188 60 0.0027 @ VGS = 4.5 V 170 60 rDS(on) (W)e VDS (V) 30 Qg (Typ) 50 nC Package Drawing APPLICATIONS PolarPAK

2SK2153

Abstract: 2SJ332S
Contextual Info: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^

SSS2209

Abstract: sot-23 P-Channel MOSFET
Contextual Info: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

Contextual Info: nixY S VUM 24-05 Power MOSFET Stage for Boost Converters ^D25 V Dss ^D S o n Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 T ype I v DSS V DGR V GS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 k fì Continuous A A A 170 W

2SJ131

Contextual Info: 2SJ131 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)170 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)

VTM48EF040T050A00

Abstract: VTM48ET040T050A00 vtm48et D496 D505 VTM48EF040M050A00
Contextual Info: VTM48EF040T050A00 VTM48ET040T050A00 VTM Transformer TM S C US C FEATURES • 48 Vdc to 4 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >94% reduces system power consumption • High density (170 A/in3)

IRFHS9351

Abstract: st 9351
Contextual Info: PD - 97572A IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) TOP VIEW S 1 6 D S2 D d A G 2 D 3 G2 D2 5 G D D1 4 S D1 D2 S1 G1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: TAIWAN SEMICONDUCTOR s TSM3455 30V P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 170 @ VGS= -4.5V -2.7 -30 1 23 Features

Contextual Info: VIV0104THJ S C NRTL US VTM DC to DC Voltage Transformation TM FEATURES • 40 Vdc – 3.3 Vdc 25 A Voltage Transformation Module - Operating from standard 48 V or 24 V PRMs • High efficiency >93% reduces system power consumption • High density (170 A/in3)

Siliconix 511

Contextual Info: SÌ3831DV Vishay Siliconix Bi-Directional P-Ch MOSFET/Power Switch New Product V B* V > Ros (o n (&) ±7 Id W 0 .170 VGg = -4 .5 V ±2.4 0.240 @ VGS = “ 2-5 V ±2,0 & FEATURES • • • • Low rps(on) Symmetrical P-Channel MOSFET Integrated Body Bias For Bi-Directional Blocking

22-A114F

Abstract: C-1024
Contextual Info: VTM48 E x 040 y 050A00 VTM Current Multiplier TM S C US C FEATURES • 48 Vdc to 4 Vdc 50 A current multiplier - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >94% reduces system power consumption • High density (170 A/in3)

ZVN3320F

Abstract: ZVN3320
Contextual Info: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360

ZVN4206E

Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA

MOTOR-ENCODER

Abstract: DC MOTOR 48V 500W analog servo controller for bldc 12v 10A dc motor mosfet driver bldc servo ramp generator encoder 12v 10A dc driver motor control mosfet brushless motor control 48v bldc motor for 48v servo motor
Contextual Info: MODULES F O R B L D C M O T O R S M O D U LES TMCM- 1 70 1-Ax is M otor Mou nted BL DC S ervo Co ntro ller / D rive r wi th E ncod er I nf. 10 A / 48V 1 0 mm M A IN CH A R AC T ER IS T IC S INFO The TMCM-170 is a controller / driver module for high performance servo drives based on brushless DC motors. It gives a

bldc servo

Abstract: bldc encoder 12v brushless motor driver ac servo motor encoder ac servo motor position control TMCM-170 OPTICAL ENCODER with stepper motor analog servo controller for bldc bldc motor for 48v drive motor 10A with transistor regulator 48V
Contextual Info: MECHATRO N I C D R I V E S W I T H B L D C M O T O R P A Nd r i ves PD- 1 70 - 5 7 57mm dia mete r BLDC Enc oder Mot or w ith Cont roll er / Dri ver and Ser ial Inte rfac e 1 0 mm M A IN CH A R AC T ER IS T IC S INFO The PD-170-57 is a full mechatronic solution including a 57 mm

Contextual Info: Semiconductor, Inc. TC170 CMOS CURRENT-MODE PWM CONTROLLER FEATURES GENERAL DESCRIPTION • T he TC 170 brings low -pow er C M O S te ch no lo g y to the cu rrent-m ode-sw itching p o w e r su pply co n tro lle r m arket. M axim um su p p ly current is 3.8 mA. B ipolar current-m ode

BSM 225

Abstract: igbt module bsm 300 igbt module bsm 200 DLC 111 BSM204A BSM 204-A
Contextual Info: IGBT Standard Modules / IGBT Standard Module Mosfet Modules / Mosfet Module < Type o< m c o n tin u e d / F o rts e tz u n g lc A R lh JC P toi K /W w V cEsat o u tlin e Type V V ds Id V A < RdS oh ou tlin e m Q < 1700V-Types 3-Phase-Full-Bridges Single Switches