S 239 L SIEMENS Search Results

FOP 244 tn

Contextual Info: Waveforms for 72 pin Modules SIEMENS Semiconductor Group 239 Waveforms for 72 pin Modules SIEMENS fee fop ÌRAS - IH RAS V t V tc S H tfíCD • tn s H - tC R P tCAS - IH CAS ÍRAD ÍASR Address IH tfíA L tCAH Use Row ÍASR Row Column tcWL r a h tw e s WE

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

AF 239 S

Abstract: AF 239 af239 Germanium power S 239 L siemens
Contextual Info: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

transistor 1548 b

Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
Contextual Info: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

AF239

Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Contextual Info: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.

Contextual Info: PNP Silicon Darlington Transistors 32E D • flE 3 b 3 S G SIEMENS/ • • • • BCV 26 Q01bbb2 3 H SIP BCV46 SPCLi SEMICONDS For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type a B C V 26

L165 equivalent

Abstract: LM675 equivalent PA12 TELEDYNE PHILBRICK 1022 TCA2465 equivalent sgs-thompson L165 sgs-thompson 3573AM 3581J 167 Teledyne
Contextual Info: \ J tp C S f N I C R 0 T E C H M 0 L 0 4 Y POWER OPERATIO NAL AM PLIFIERS EQUIVALENT/SECOND SOURCES HTTP :/ / W W W .A P EX M IC R OT EC H .CO M 800 546-APEX (800) 546-2739 APEX ALTERNAnVES FOR EXISTING DESIGNS ALLEGRO (SPRAGUE) VLN3755W PA26 (page 195)

Contextual Info: SIEMENS BAS 16W Silicon Switching Diode • For high speed switching, applications Type Marking Ordering Code tape and reel BAS 16W A6s Q62702-A1050 Pin Configuration 1 2 3 A C Package SOT-323 Maximum Ratings Parameter Symbol Reverse voltage Vr B A S 16W

Contextual Info: SIEMENS SIMOPAC MOSFET Module VDS lo ^ D S o n • • • • • • • BSM 191 F (C) = 1000 V = 28 A = 0.42 Q Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a ’ ) Type

BUZ27

Abstract: 14528 C67078-A1602-A2 0820C
Contextual Info: öfiD D • ä23SbQS 0 0 1 4 5 2 0 88D 1 4 5 2 8 D 5 « S IE G ? f ? BUZ27 SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 100 V Drain-source voltage V^js Continuous drain current = 26 A h Drain-source on-reslstance ^DS on = 0,06 a Description SIPMOS, N-channel, enhancement mode

Contextual Info: • S 1E M E N ! ÛS35bGS GGEGTBS ^ C3SIE6 SIEMENS AK TI EN GES ELLS CHAF M7E D 39-/5 SIMOPAC MOSFET Module BSM 191 F C Vbs = 1000 V /„ = 28 A ^DS(on) = 0.42 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode

BSS91

Abstract: transistor ti p80 sik02232 sik02239 as3st
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor Vds ¡o = 240 V = 0 .3 5 A ^D S on = 6.0 Q • • • BSS 91 N channel Enhancem ent mode Package: TO -18 1> Not for new Type I BSS 91 design! Ordering code for version in bulk Q 62702-S457 Maxim um Ratings Parameter

Contextual Info: öfiD D • ä23SbQS 0 0 1 4 5 2 0 88D 1 4 5 2 8 D S « S IE G T"~ ? f S ? BUZ27 SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel Drain-source voltage Continuous drain current Drain-source on-reslstance Description Case = 100 V V^is = 26 A

Contextual Info: SIEMENS BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 20 Vbs 100 V *> ^DS on Package Ordering Code 13.5 A 0 .2 Q TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current Id 7b = 28 °C

Contextual Info: 32E D • ÛE3b32G O Q lb T b b ISIP PNP Silicon High-Voltage Transistors BF 721; BF 723 _ SIEMENS/ SPCLi SEMICONDS _ r - s 3 - \ 7 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage

NS160H

Contextual Info: SIEMENS BSM 100G D120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 100 GD 120 DN2 h VCE 1200V 150A Package Ordering Code

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

af239

Abstract: AF 239 siemens I SIEMENS Germanium
Contextual Info: ESC D • fl23Sb05 DQOMObb R PNPGermanium RFTransistor WMSIEG 25c 04066 SIEMENS AKTIENGESELLSCHAF - 0 AF239 ~0T~-3t~ 0*7 fo r UHF in p u t stages up to 9 0 0 M H z AF 2 3 9 is a germanium PNP mesa transistor in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 . T he leads

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

SE 194

Abstract: matsua capacitor electrolytic
Contextual Info: Aluminum Electrolytic Capacitors High-perform ance capacitor with screw terminals For professional power supply units and applications in power electronics High current handling capability Al ca s e w ith in s u la tin g sle e ve M o u n tin g by ring c lips or th re a d e d stud "

62703-Q

Contextual Info: SIEMENS LC 5 mm T1 3/4 LED, Diffused Low Current LED LS 5469, LY 5469, LG 5469 Besondere Merkmale • eingefärbtes, diffuses G e h ä u se • als optischer Indikator einsetzbar • hohe Lichtstärke bei kleinen Stöm en (typ. 2 mA) • Lö tspieß e ohne A ufsetzebene

4274v50

Abstract: TLE4274V50 Q67000-A9256 Q67000-A9257 Q67000-A9258 Q67006-A9259 Q67006-A9260 Q67006-A9261 P-T0220-3-1 TLE4274
Contextual Info: SIEMENS " a23Sb0S Mt3 jl_ g 4274 L o w -D ro p V o lta g e R e g u la to r Features • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof • Suitable for use in automotive electronics

transistor 2sc 548

Abstract: equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 Bc 649 transistor bc 647 BC5481 BC649
Contextual Info: asc D • asBSbos o o o m io T M S IE G NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENÛESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 55 0 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and