S BAND Search Results

Contextual Info: Product Specifications «iisi ¿si s 1 SSSSS* «3Sè *35 ' SSU iy iT lH il h S S *â •= s *-ï*s ir!s a s *s a s a gS i8a * ï s COMMUNICATIONS ANT On-Window Antenna Series Patented Dual Band Cellular/PCS & Single Band PCS B Single band model provides 5 dBi gain in

VBFZ-780

Abstract: VLM-52-S VLM-33 vbfz-1065-s VLM-33-S VBFZ-1065 VBFZ-3590-S VBFZ-2000 VBFZ-925-S VBFZ-2340-S
Contextual Info: PRODUCT CHANGE NOTICE PCN Form D4-E000-73 PCN#10-012 NOTIFICATION DATE: July 6, 2010 MODEL(S) AFFECTED: VLM Limiter series using FF case style (VLM-33-S+, VLM-52-S+, VLM-63-S+, and VLM-72-S+) VBFZ Bandpass Filter series using FF case style (VBFZ-780-S+, VBFZ-925-S+, VBFZ-1065-S+, VBFZ-1400-S+, VBFZ-1690-S+, VBFZ-2000-S+,

FLC081XP

Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
Contextual Info: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A

AN5070

Abstract: AN5072 an5071 335 16 pin
Contextual Info: AN5070, AN5071, AN5072 e u tim ie AN5070, AN5071, AN5072 K • * - f • y f 1@ * S 3 1 V S ' ( b * i S r t i « Tuner Band S w itc h C ir c u it s ( B u ilt - in 31 V V oltage Regulator) TV AN5070, AN5071, AN5072 tJ, 0 S & & V 3 1 V S i S F . £ 1*1« L

Contextual Info: i t f - K Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS D1NL40 Case : 0.6 / ¿2.6* 400V 0.9A =E= O ' •trr5 0 n s e -w T ! Cathode : Anode ^ Cathode band s K ^ E n a s fflia M arking •S R B S •7 'J -T ft-iJ L / L4 • S S . OA, S§B£

HF power amplifier

Contextual Info: 4 2E D • 0035022 S G S -T H O M S O N Z I S HSGTH 1 s 6 TEA8805 m T s o -n 1.3 GHz PLL AND PRESCALER CIRCUIT PRELIMINARY DATA ■ FULLY SERIAL BUS-CONTROLLED l2C -B U S . ■S E V E N PROGRAMMABLE O UTPUT BAND BUFFERS (CAN DRIVE UP TO 10mA) * PROGRAMMABLE REFERENCE COUNTER

BZ-3RDS15T-S

Contextual Info: MICRO SWITCH FREEPORT ILLI NOI S. U S A A DI VI SI ON OF FED . C AT ALO G M F C . BZ-3RDS15T-S S W IT C H -B A S IC HONEYWELL C O D E LISTIN G 91828 CO SILICONE ELASTOMER PLUNGER SEAL SECURED TO COMPONENTS BY EXTERNAL BANDING AND SPRING RETAINING RING C O R R O S IO N R E S I S T A N T

Contextual Info: ARF476FL Common Source Push-Pull Pair S G S S D RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR D S ARF476FL D G S D S S G G S 165V 450W 150MHz The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

Contextual Info: BLUE BAND •/ . *■ -. i'V o rf s t ’ >, T f & s f / * .- 3 S 3 3 C . ^ iz o . z - z - s rtfs/w M n /oa s - roq SQ ca3 l e . ir ^ r z ^ r « ? . / n z t'f * /r< & is r ii A & a? r-yfv^v^/A /<? C A 3T £T * @ S & & t o /O 3 ~ 4 S & 4 - ,xyxx> I L Arr>s-/<z ^ ^ # r r & - z& & .

NE32184A

Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
Contextual Info: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B

Contextual Info: M IT S U B IS H I IC s Monitor M52745SP S S S S Ä BUS CONTROLLED 3-CHANNEL VIDEO PREAMP FOR CRT DISPLAY MONITOR DESCRIPTION M52745SP is semiconductor integrated circuit for CRT display PIN CONFIGURATION (TOP VIEW) monitor. It includes OSD blanking, OSD mixing, retrace blanking, wide band

Contextual Info: -í 1 — K/Diodes S S 1 4 2 1SS142/1SS143/1SS144 / 1 S S 1 4 3 / im&MnnEz < ? * > '> •; ^ 1 S S 1 4 4 t- k Silicon Diffused Junction High-Voltage Switching Diodes • íl-Jfí \t"iil2]/Dimensions Unit : mm 1) s t t m v t i i o 2) (J E D E C : DO35)0 CATHODE BAND

Contextual Info: < > z •H S -A 3 —4 os o o M es ««I s cn CO O» S' S' CD M 3 CD V» ita transmission lerface module -1 CD O S* ilecontrol, telemetering itenna module —4 3 IN» a> a > M <’ c/i n s 3D a. 5* S' e 5" triable bandpass fillers > Type ■H X ro ro —i

Contextual Info: T V P S 0 2 Y D 38999/21 * - hermetic, metal box mounting receptacle TVPS02Y-XX-XXX TVPS02YN-XX-XXX D38999/21 t Red band indicates fully mated * To complete order number, see pages 32 and 33. Shell S ize MS S hell S ize C ode B T hre a d C la s s 2A 0 .1 P -0 .3 L -T S

2SC1200

Abstract: feed through capacitor
Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR O UHF - S ^ K I Î J Ü S f f l O UHF ù o il ft X UHF~S Band Power A m p lifie r A p p lic a tio n s . UHF-S Band O s c il l a t o r A p p lic a tio n s . * & f t ^ £ S g T =r V* mm INDUSTRIAL APPLICATIONS l^ o Lx*t> t-t*

Contextual Info: FIBER OPTIC - Transimpedance Amplifier ATA90000 Transimpedance Amplifier S O N E T O C- 192 Advanced Product Inform ation Rev 0 FE A TU R E S A P P LIC A TIO N S Dual +/-5 Volt Supply S O N E T O C -192/S D H S T M -64 R eceiver 10 G H z Bandwidth G ood S ensitivity and High Bit Rates

FSW67

Abstract: SMZ-75
Contextual Info: mm-Wave Band Signal Generation and Analysis Application Note Products: ı R&S SMF100A ı R&S SMZ75/SMZ90 ı ı R&S SGS100A ı R&S AFQ100B ® ı ® R&S FSW ® R&S FS-Z75/90/110 ® ® This application note describes how to generate and analyze wideband digitally modulated signals in the

2sc 3050 transistor

Abstract: 2SC392 251C L200 vaac
Contextual Info: s c s /U D > N P N it:9 * s /F J i/7 b -* fê h 5 :/s tt9 392 ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR O VHF, U H F * R F i» * ffl a VHF and UHF Band RF A m p lifier A p p llca tlo n e • I S U S rifift-r-f. NF=*ÆdB (T yp . • f S I Ü INDUSTRIAL APPLICATIONS

PO7C

Abstract: 2SC2380 2SC238
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R

TF328

Abstract: 125VN AMF4001 BZ-2RS55-A2-S abe 915
Contextual Info: MICRO SWITCH FREEPORT ILLINOIS. U S A A OF DIVISION CATALOG B Z -2 R S 5 5 -A 2 -S S W IT C H -B A S IC HONEYWELL LISTIN G AMF4001 F E D . M F S . C O D E 9 1929 9 1 7 ± .O I5 V evi HARDENED S T E E L PLUNGER BUNA N ELASTOMER PLUNGER S EA L SECURED TO C OM PONENTS BY E X T E R N A L BANDING AT

1SS135

Contextual Info: $ -f — K /D io d es 1SS135 1S S 135 '>U = ] > x 7 Silicon Epitaxial Planar Band Switching Mini-Diode K • W K s tiilll/ D im e n s io n s U n it : mm 2) 3) ifS/hS (DO-34) 5« -7-.— 4ASH 4) * ' 7 ^ - > - ; U T f S I S * T * - 5 <, • Features ^• A V tM iV S ' V A y r - r V

Contextual Info: 37bö552 GGlflMTfl SOB « P L S B Si GE C P L E S S E Y S E M I C O N D U C T O R S DC1515/27 SILICON SCHOTTKY S-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance

Contextual Info: BLS6G2735L S -30 single-ended S-band LDMOS transistor Cover the entire S-band with one 30 W driver Covering the whole 2700 MHz to 3500 MHz S-band frequency range, the BLS6G2735L(S)-30 30 W single-ended ceramic LDMOS transistor delivers unparalleled performance. Whether

TS271

Contextual Info: /= # ^ 7# S G S -T H O M S O N s H iÊ T O R K g S T S 2 7 1 C ,I,M PROGRAMMABLE SINGLE CMOS OP-AMPs • O FFSET NULL CAPABILITY by external com ­ pensation • SYM M ETRICAL OUTPUT CURRENTS ■ HIGH GAIN BANDW IDTH PRODUCT ■ THE TRAN SFER FUNCTION IS LINEAR