S-BAND HIGH POWER AMPLIFIER Search Results

RF Amplifier 500w 175 mhz

Abstract: ft3000m MIMIC control panel CPI Helix tube VTG6292 500w amplifier a 40 watt power supply 500W D Amplifier 2780C
Contextual Info: CPI 500W S/C-Band TWT Amplifier for Instrumentation Applications S/C - Band The VZS/C-2780C2 S/C-Band 500 watt TWT High Power Amplifier features high efficiency, small size and an integral computer interface. Safety Provides 500 watts of power in the 2.0 to

Contextual Info: High Power S band Drop-in Isolator Renaissance has developed a new low cost, high power, drop-in isolator to protect expensive amplifiers from unwanted reflected power levels at S band frequencies. Covering 2.7 – 2.9 GHz, this isolator provides a VSWR of

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz

MGF2430A

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz

MGF2415

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz

MGF2415A

Abstract: MGF2430A
Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz

Contextual Info: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • Aethercomm P/N SSPA 2.7-3.2-30 is a high power S 30 Watts Minimum Linear Power @ 85 C Base Plate band solid state power amplifier that operates from 2.7 to 3.2 GHz. It offers a minimum of 30 watts of

MGF1451A

Contextual Info: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1451A Low Noise MES FET DESCRIPTION Outline Drawing The MGF1451A is designed for use in S to Ku band power amplifiers. FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION S to Ku band power Amplifiers

Contextual Info: Part Number: Integra IBP3135M150 TECHNOLOGIES, INC. S-Band Radar Pallet Amplifier Silicon Bipolar Technology − Ultra-high fT Class C Operation − High Efficiency Part number IBP3135M150 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems

FMM5049

Abstract: S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND FMM5049VT MMIC s-band amplifier
Contextual Info: FMM5049VT L,S-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=41.0dBm typ. ・High Linear Gain: GL=33.0dB (typ.) ・Broad Band: 1.8~2.3GHz ・Hermetically sealed Package DESCRIPTION The FMM5049VT is a high-gain wide-band three-stage MMIC amplifier

Contextual Info: Part Number: IBP3135MH200 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3135MH200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth

SSPA

Abstract: 500 watt RF amplifier GHz SSPA C Band x band high power amplifier 2.45 Ghz power amplifier 45 dbm SSPA-2227-80 s-band 50 Watt power amplifier SSPA 11 GHz Aethercomm x band sspa
Contextual Info: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • • • • Aethercomm P/N SSPA 2227-80 is a high power, S Band, solid state RF amplifier SSPA which covers in excess of 500 MHz of bandwidth from 2.2 to 2.7 GHz. This Class AB SSPA offers

12W SMD

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm

RG1000

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm

Contextual Info: Integra Part Number: IBP2729MH300 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2729MH300 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth

IBP2731M200

Contextual Info: Part Number: Integra IBP2731M200 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2731M200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth

s band

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm