S0901 Search Results

SiR460D

Abstract: SiR460DP siR460
Contextual Info: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET

SI2333DS-T1-E3

Contextual Info: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si4630DY

Abstract: Si4630DY-T1-E3 Si4630DY-T1-GE3
Contextual Info: Si4630DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.0032 at VGS = 4.5 V 29 Qg (Typ) 49 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si4660DY

Abstract: Si4660DY-T1-E3 Si4660DY-T1-GE3
Contextual Info: Si4660DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0058 at VGS = 10 V 23.1 0.007at VGS = 4.5 V 21 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si2309DS

Abstract: Si2309DS-T1
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

Contextual Info: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4634DY

Abstract: Si4634DY-T1-E3 Si4634DY-T1-GE3
Contextual Info: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

0116 transformer

Abstract: IRLI630G SiHLI630G SiHLI630G-E3 16-FEB-09 IRLI630
Contextual Info: IRLI630G, SiHLI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5V

5A7-7ir

Abstract: 245-7iR
Contextual Info: PSB Series Data Sheet 3 to 8 A Switching Regulators Input voltage up to 144 V DC Single output of 5.1 to 48 V DC No input to output isolation • Efficiency up to 96% • Low input-output differential voltage • No derating over temperature Model Selection

S90012

Contextual Info: IMS 15 Series 15 Watt DC-DC Converters Wide input voltage ranges up to 75 V DC 1 or 2 outputs up to 48 V DC 1500 V DC I/O electric strength test voltage LGA • Magnetic feedback • Short circuit protection • Industry standard 2" x 1.6" case with 10.5 mm

si4626a

Abstract: si4626
Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

mosfet 23 Tsop-6

Contextual Info: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.5 0.025 at VGS = 2.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated

Contextual Info: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated

si2314

Abstract: 49/marking code vishay SILICONIX sot-23
Contextual Info: Si2314EDS Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES • Halogen-free According to IEC 61249-2-21 RDS(on) (Ω) ID (A) 0.033 at VGS = 4.5 V 4.9 • TrenchFET Power MOSFET 0.040 at VGS = 2.5 V 4.4 • ESD Protected: 3000 V

eaton el 198

Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
Contextual Info: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com

Contextual Info: Si2327DS Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A) 2.35 at VGS = - 10 V - 0.49 2.45 at VGS = - 6.0 V - 0.48 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance

si4448

Contextual Info: Si4448DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 12 0.0017 at VGS = 4.5 V 50 0.002 at VGS = 2.5 V 46 0.0027 at VGS = 1.8 V 40 Qg (Typ.) 56 nC • Halogen-free According to IEC 61249-2-21 Available

SOT-23 marking a8

Abstract: Si2308DS
Contextual Info: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V

Contextual Info: Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance

Si5435BDC-T1-GE3

Abstract: Si5435BDC-T1-E3 SI5435BDC
Contextual Info: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®

SI2319DS-T1-GE3

Abstract: SI2319DS-T1-E3 marking code, t2 Si2319DS
Contextual Info: Si2319DS Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET ID (A)b 0.082 at VGS = - 10 V - 3.0 0.130 at VGS = - 4.5 V - 2.4 APPLICATIONS

Si2328DS

Abstract: Si2328DS-T1-E3 A96V
Contextual Info: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Available • 100 % Rg Tested • TrenchFET Power MOSFET TO-236 (SOT-23)

A9 SOT-23

Abstract: Si2309DS Si2309DS-T1
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

245-7iR

Contextual Info: PSB Series Data Sheet 3 to 8 A Switching Regulators Input voltage up to 144 VDC Single output of 5.1 to 48 VDC No input to output isolation Features • • • • RoHS lead-solder-exempt compliant Efficiency up to 96% Low input-output differential voltage