SI2335DS Search Results

Si2335DS

Contextual Info: SPICE Device Model Si2335DS P-Channel 12-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Contextual Info: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated

Contextual Info: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated

Si2335DS

Abstract: SI2335DS-T1-E3 E5 Marking
Contextual Info: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated

Contextual Info: Si2335DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)*

Si2335DS

Abstract: 1519b
Contextual Info: SPICE Device Model Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: Si2335DS
Contextual Info: Si2335DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

E5 marking

Abstract: SI2335DS-T1-E3 02 jm Si2335DS
Contextual Info: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated

E5 marking

Abstract: Si2335DS E5* MARKING
Contextual Info: Si2335DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)*

Si2335DS

Contextual Info: SPICE Device Model Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2335DS

Contextual Info: SPICE Device Model Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

E5 marking

Abstract: Si2335DS
Contextual Info: Si2335DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)*

EV2300

Abstract: bq8012 bq80 SLUU159 SLUU159A bq8015dbt daishinku C1608C0G1H220KT C1608X7R1E104KT LN1371G
Contextual Info: EV2300 Evaluation Module Interface Board User’s Guide February 2005 PMP EVMs SLUU159A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

JDK105BJ475MV

Abstract: MIPSZ20120D2R2 2510-6002UB MIPSZ2012 OMAP-L138 TMS320C6742 TMS320C6746 TMS320C6748 TPS62353 omapl138
Contextual Info: Application Report SLVA339 – June 2009 High-Vin, High-Efficiency Power Solution Using DC/DC Converter With DVFS Ambreesh Tripathi . PMP - DC/DC Low-Power Converters ABSTRACT This reference design is intended for users designing with the TMS320C6742,

SP6126

Abstract: 1N4148 MBRA340T3 MBRA340T3G Si2335DS Si2343DS Si4447DY
Contextual Info: Solved by SP6126 TM High-Voltage, Step Down Controller in TSOT6 FEATURES Wide 4.5V – 29V Input Voltage Range Internal Compensation Built-in High Current PMOS Driver Adjustable Overcurrent Protection Internal soft-start 600kHz Constant Frequency Operation

bq8012

Abstract: EV2300 crystal 3.2768 Mhz Battery connected Box ev2300 dbt38 TNPW06031 bq80 EEPROM MEMORY TO-92 FAIRCHILD C1608C0G1H222KT BQ8015
Contextual Info: User's Guide SLUU159C – February 2005 – Revised January 2012 EV2300 EVM Interface Board This user's guide describes the function and operation of the EV2300 evaluation module. This guide includes a complete description of the EV2300 EVM, as well as a bill of materials, and schematic.

STM9435

Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

semiconductor cross reference

Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

DSX630G-12

Contextual Info: User's Guide SLUU159E – February 2005 – Revised May 2013 EV2300 EVM Interface Board This user's guide describes the function and operation of the EV2300 evaluation module. This guide includes a complete description of the EV2300 EVM, as well as a bill of materials, and schematic.

Contextual Info: User's Guide SLUU399A – April 2010 – Revised March 2011 Thumbus2300 This users guide describes the function and operation of the Thumbus2300 evaluation module. A complete description, as well as schematic diagram and bill of materials are included.

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

C3216X7R-1C106MT

Abstract: C3216X7R1C106MT DM365 TMS320DM365 TPS62111 TPS62231 TPS62290 NPN Transistor TO92 40V 200mA MIPSZ2012 JDK105BJ225
Contextual Info: Application Report SLVA357 – August 2009 High-Vin, High-Efficiency Power Solution Using DC/DC Converter for the DM365 Ambreesh Tripathi . PMP - DC/DC Low Power Converters ABSTRACT This reference design is intended for users designing with theTMS320DM365