S091 Search Results

s0918

Abstract: d7c transistor marking N10
Contextual Info: r Z Z SGS-THOMSON ^ 7 # MIDlSB§ ilLieTriBl iD©i S0918 SMALL SIGNAL NPN TRANSISTOR Type Marking S0918 N10 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . SMALL SIGNAL VHF AMPLIFICATION AND

2SA522

Abstract: 2SA522A 2SD110 2SK15-M 8D-18 3SK28-M MS0912 3SK28
Contextual Info: f l * £ *& Ta=25°C Vf;|)S e æ * M # m m « « M S0912 -60731 ßWiSJWW Nf t ^ 2 S K 1 5 -M 3 S K 2 8 -M N Tj p -3 0 V'GIDS 18 Vg2I)S -18 -= + T ?•«.»<>» I C SS ft MIN Vos (V ) Vus (V ) (m A ) -1 0 0 .8 V e is -1 5 \fc[G2 =- 0 3 .7 * M AX (V) M S0912 - 60730

s0913

Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

SI4850EY-t1g

Abstract: si4850
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

DG9424

Abstract: cnc schematic diagram
Contextual Info: DG9424, DG9425, DG9426 Vishay Siliconix Low-Voltage, Dual Supply, Low RON, Quad SPST Analog Switches DESCRIPTION FEATURES The DG9424, DG9425, DG9426 are low voltage precision monolithic quad single-pole-single-throw analog switches. • 2.7 V thru 12 V single supply or ± 3 thru ± 6 dual supply

Si9407AEY

Contextual Info: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

AC-DC Converters

Abstract: RESISTOR VDR
Contextual Info: X Series Data Sheet 375 and 500 Watt AC-DC Converters Input range 85 to 264 VAC with PFC 1 or 2 isolated, regulated outputs up to 96 V Class I equipment Features • RoHS lead-solder-exempt compliant • Electrically and mechanically rugged DIN-rail front end

Contextual Info: Si7463DP Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0092 at VGS = - 10 V - 18.6 0.014 at VGS = - 4.5 V - 15 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

transistor 1047

Abstract: SC70-5L SiP21106 SiP21107 SiP21108 TSC75-6L TSOT23-5L SIP21106DR-12-E3 SIP21107DR-12-E3 SIP21106DR
Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low

Contextual Info: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21

SiE844DF-T1-E3

Abstract: SiE844DF-T1-GE3 SiE844DF
Contextual Info: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET

Contextual Info: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling

Contextual Info: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V

Contextual Info: Product is End of Life 3/2014 SiP12503 Vishay Siliconix 500-mA - Adjustable Boost Converter for Single or Dual Cell DESCRIPTION FEATURES SiP12503 is a boost converter IC with adjustable output voltage for single or dual cell NiMH or Alkaline battery pack.

SQ3456EV

Abstract: SQ3456EV-T1-GE3
Contextual Info: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

CRCW06031132F

Abstract: MSOP-10
Contextual Info: SiP12101 Vishay Siliconix High Performance Step-Down DC-DC Converter With Adjustable Output Voltage DESCRIPTION FEATURES The SiP12101 is a high efficiency 600 mA step down converter with internal low on resistance power MOSFET switch and synchronous rectifier transistors. It is designed to

SIR164DP

Abstract: A7282 65060 spice model 740
Contextual Info: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si7617DN

Abstract: SI7617
Contextual Info: SPICE Device Model Si7617DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SiA517DJ

Abstract: S09-1808
Contextual Info: SPICE Device Model SiA517DJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over

SUP60N10-18P

Contextual Info: SPICE Device Model SUP60N10-18P Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

SI4470EY-T1-E3

Abstract: Si4470EY
Contextual Info: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature