S11024 Search Results
S11024 Price and Stock
CIT Relay & Switch CS11024.3F160SWITCH TACTILE SPST-NO 0.05A 50V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CS11024.3F160 | Cut Tape | 10,639 | 1 |
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| CS11024.3F160 | Digi-Reel | 10,639 | 1 |
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| CS11024.3F160 | Tape & Reel | 10,000 | 1,000 |
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CIT Relay & Switch CS11024.3F260SWITCH TACTILE SPST-NO 0.05A 50V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CS11024.3F260 | Cut Tape | 3,945 | 1 |
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| CS11024.3F260 | Digi-Reel | 3,945 | 1 |
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| CS11024.3F260 | Tape & Reel | 3,000 | 1,000 |
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CIT Relay & Switch CS11024.3F100SWITCH TACTILE SPST-NO 0.05A 50V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CS11024.3F100 | Cut Tape | 3,638 | 1 |
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| CS11024.3F100 | Digi-Reel | 3,638 | 1 |
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| CS11024.3F100 | Tape & Reel | 2,000 | 1,000 |
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CIT Relay & Switch CS11024.3F100JSWITCH TACTILE SPST-NO 0.05A 50V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CS11024.3F100J | Cut Tape | 2,000 | 1 |
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| CS11024.3F100J | Tape & Reel | 2,000 | 1,000 |
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CIT Relay & Switch CS11024.3F260JSWITCH TACTILE SPST-NO 0.05A 50V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CS11024.3F260J | Digi-Reel | 1,975 | 1 |
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Buy Now | |||||
| CS11024.3F260J | Cut Tape | 1,975 | 1 |
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| CS11024.3F260J | Tape & Reel | 1,000 | 1,000 |
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S11024 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
67341
Abstract: si4403C si4403
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Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67341 si4403C si4403 | |
sir662dpContextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • |
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SiR662DP 2002/95/EC SiR662DP-T1-GE3 11-Mar-11 | |
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Contextual Info: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21 |
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Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
67341Contextual Info: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21 |
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Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 11-Mar-11 67341 | |
S11074
Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
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S11000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S11074 S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065 | |
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Contextual Info: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8 |
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Si4501BDY 2002/95/EC Si4501BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8 |
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Si4501BDY 2002/95/EC Si4501BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product SiR814DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0021 at VGS = 10 V 60 0.0029 at VGS = 4.5 V 60 Qg (Typ.) 27 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • |
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SiR814DP 2002/95/EC SiR814DP-T1-GE3 11-Mar-11 | |
SI4463
Abstract: SI4463CDY
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Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4463 | |
marking G2
Abstract: si3993
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Si3993CDV 2002/95/EC Si3993CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking G2 si3993 | |
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Contextual Info: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 |
Original |
Si1034CX 2002/95/EC SC-89 11-Mar-11 | |
sir640
Abstract: made 314 vishay
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SiR640DP 2002/95/EC SiR640DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir640 made 314 vishay | |
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Contextual Info: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 |
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Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si4501BDY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 ID (A)a Qg (Typ.) RDS(on) () 0.017 at VGS = 10 V 12 0.020 at VGS = 4.5 V 11 0.027 at VGS = - 4.5 V -8 0.037 at VGS = - 2.5 V - 6.8 |
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Si4501BDY 2002/95/EC Si4501BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21 |
Original |
Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product SiR814DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0021 at VGS = 10 V 60 0.0029 at VGS = 4.5 V 60 Qg (Typ.) 27 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • |
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SiR814DP 2002/95/EC SiR814DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SOT563F
Abstract: Si1034CX-T1-GE3
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Si1034CX 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SOT563F Si1034CX-T1-GE3 | |
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Contextual Info: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification |
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SiR640DP 2002/95/EC SiR640DP-T1-GE3 11-Mar-11 | |
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Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • |
Original |
SiR662DP 2002/95/EC SiR662DP-T1-GE3 11-Mar-11 | |
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Contextual Info: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 |
Original |
Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 11-Mar-11 | |
marking 3800 so8Contextual Info: New Product SiR814DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0021 at VGS = 10 V 60 0.0029 at VGS = 4.5 V 60 Qg (Typ.) 27 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • |
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SiR814DP 2002/95/EC SiR814DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking 3800 so8 | |
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Contextual Info: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification |
Original |
SiR640DP 2002/95/EC SiR640DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 |
Original |
Si4463CDY 2002/95/EC Si4463CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product Si3993CDV Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.111 at VGS = - 10 V - 2.9 0.188 at VGS = - 4.5 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si3993CDV 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |