SOT563F Search Results

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches

Contextual Info: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V

Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400

Contextual Info: Si1072X Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) Qg (Typ.) 0.093 at VGS = 10 V 1.3a 1.2 5.41 0.129 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated

Contextual Info: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SRA2202

Abstract: SRC1202 SUR511EF
Contextual Info: SUR511EF Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • Digital transistor Features • Both SRC1202 chip and SRA2202 chip in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR511EF Marking BX Package Code

J004

Abstract: SRA2205 SUR506EF
Contextual Info: SUR506EF Semiconductor Epitaxial Planar Type PNP Silicon Transistor Descriptions • Digital transistor Features • Two SRA2205 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. Marking Package Code SUR506EF 88 SOT-563F

SS TRANSISTOR

Abstract: SRA2204 SUR502EF TRANSISTOR MARKING CODE ss
Contextual Info: SUR502EF Semiconductor Epitaxial Planar Type PNP Silicon Transistor Descriptions • Digital transistor Features • Two SRA2204 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR502EF Marking SS Package Code SOT-563F

Contextual Info: SOT-563F Tape and Reel Data SOT-563F Packaging Configuration: Figure 1.0 Packaging Description: SOT-563F parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

BC847S

Abstract: BC857S FFB2222A FFB2227A FFB2907A FFB3904 FFB3906 FFB3946 MMPQ3904
Contextual Info: Discrete Small Signal Hybrid Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SC70 NPN Configuration FFB3904 40 60 6 0.2 100 300 1 10 0.3 50 5 FFB2222A 40 75 5 0.5 100 300 10 150

Contextual Info: FJYF2906 FJYF2906 PNP Multi-Chip General Purpose Amplifier C1 E1 • Collector-Emitter Voltage: VCEO = 40V • Amplifier and Switching Application • E2 is on pin 1 C2 B1 B2 Pin1 E2 SOT-563F Mark: S1 Absolute Maximum Ratings TA=25°C unless otherwise noted

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) () ID (A) 0.625 at VIN = 4.5 V ± 0.43 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 D2 Q2 • Halogen-free According to IEC 61249-2-21

equivalent of SL 100 NPN Transistor

Contextual Info: SUR543EF Semiconductor Epitaxial planar NPN silicon transistor Descriptions • Dual chip digital transistor Features • Two SRC1204 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information

SRA2205

Abstract: SUR506EF
Contextual Info: SUR506EF Epitaxial planar PNP silicon transistor Descriptions • Dual chip digital transistor Features • Two SRA2205 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Package : SOT-563F Ordering Information

SBT3904

Abstract: SBT3906 SUT394EF
Contextual Info: SUT394EF Epitaxial planar NPN/PNP silicon transistor Description • Complex type bipolar transistor Feature • Small package save PCB area • Reduce quantity of parts and mounting cost • Both SBT3906 chip and SBT3904 chip in SOT-563F package Package : SOT-563F

2SC5343

Abstract: SUT507EF 2SC5343 equivalent
Contextual Info: SUT507EF Semiconductor Epitaxial planar NPN silicon transistor Description • Complex type bipolar transistor Feature • Very small package save PCB area • Reduce quantity of parts and mounting cost • Two 2SC5343 chips in SOT-563F package Ordering Information

Contextual Info: 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package

15KV

Contextual Info: SDT6D8EF Semiconductor ESD Protection Diode Features • Transient protection for data lines to IEC 61000-4-2 ESD 15KV(air), 8KV(contact) • Small package for use in portable equipment. Applications • ESD Protection Ordering Information Type NO. Marking

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™