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    S11109 Search Results

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    S11109 Price and Stock

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    Samtec Inc ZSS-111-09-T-D-1300

    CONN HDR .100" 22POS
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    DigiKey ZSS-111-09-T-D-1300 Bulk 1
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    Avnet Americas ZSS-111-09-T-D-1300 Bulk 1 Weeks 1
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    Mouser Electronics ZSS-111-09-T-D-1300
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    Newark ZSS-111-09-T-D-1300 Bulk 1
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    Master Electronics ZSS-111-09-T-D-1300
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    Sager ZSS-111-09-T-D-1300 104 1
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    JRH ELECTRONICS ZSS-111-09-T-D-1300

    STACKING BOARD CONNECTOR, ELEVAT
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    DigiKey ZSS-111-09-T-D-1300 Bulk 10
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    Samtec Inc ZSS-111-09-G-D-1340

    CONN HDR .100" 22POS
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    DigiKey ZSS-111-09-G-D-1340 Bulk 1
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    Avnet Americas ZSS-111-09-G-D-1340 Bulk 1 Weeks 1
    • 1 $3.89
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    Mouser Electronics ZSS-111-09-G-D-1340
    • 1 $4.09
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    Newark ZSS-111-09-G-D-1340 Bulk 1
    • 1 $4.77
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    Master Electronics ZSS-111-09-G-D-1340
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    Sager ZSS-111-09-G-D-1340 104 1
    • 1 $4.58
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    JRH ELECTRONICS ZSS-111-09-G-D-1340

    CONN HDR .100" 22POS
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    DigiKey ZSS-111-09-G-D-1340 Bulk 1
    • 1 $9.67
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    Samtec Inc ZSS-111-09-S-D-1315

    CONN HDR .100" 22POS
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    DigiKey ZSS-111-09-S-D-1315 Bulk 1
    • 1 $5.54
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    Avnet Americas ZSS-111-09-S-D-1315 Bulk 1 Weeks 1
    • 1 $5.12
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    Mouser Electronics ZSS-111-09-S-D-1315
    • 1 $5.38
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    • 100 $4.30
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    Newark ZSS-111-09-S-D-1315 Bulk 1
    • 1 $6.26
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    Master Electronics ZSS-111-09-S-D-1315
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    Sager ZSS-111-09-S-D-1315 104 1
    • 1 $6.03
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    S11109 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0015 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET


    Original
    SQM120N03-1m5L AEC-Q101 2002/95/EC O-263 O-263 SQM120N03-1m5L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: JÊ Ë Ê È L * & 28C64A M ig z r o n c h ip i 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms


    OCR Scan
    28-pin 32-pin DS111251-page PDF

    Contextual Info: SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0015 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET


    Original
    SQM120N03-1m5L AEC-Q101 2002/95/EC O-263 O-263 SQM120N03-1m5L-GE3 11-Mar-11 PDF

    S11074

    Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
    Contextual Info: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


    Original
    S11000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S11074 S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065 PDF

    Contextual Info: SQD50N03-4m0L Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0040 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET


    Original
    SQD50N03-4m0L AEC-Q101 2002/95/EC O-252 O-252 SQD50N03-4m0L-GE3 11-Mar-11 PDF

    26c64

    Abstract: 26C64A *26C64
    Contextual Info: a 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan
    28C64A Time--200 S11109F-page 26c64 26C64A *26C64 PDF

    28C64A

    Abstract: 28C64A-15 28C64A-20 28C64A-25 MS-011
    Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


    OCR Scan
    28C64A 28-pin 32-pin MS-016AE DS00049M-page 28C64A 28C64A-15 28C64A-20 28C64A-25 MS-011 PDF

    5053 VISHAY

    Contextual Info: SQD50N03-4m0L Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0040 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET


    Original
    SQD50N03-4m0L AEC-Q101 2002/95/EC O-252 O-252 SQD50N03-4m0L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 5053 VISHAY PDF

    Contextual Info: SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0015 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET


    Original
    SQM120N03-1m5L AEC-Q101 2002/95/EC O-263 O-263 SQM120N03-1m5L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.0015 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET


    Original
    SQM120N03-1m5L AEC-Q101 2002/95/EC O-263 SQM120N03-1m5L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF