S1206 Search Results

M9510

Contextual Info: High Value Chip Resistors STYLE AH STYLE CHX Pretinned Ni Barrier Gold Terminations Terminations SIZES SIZE CODE S0502 S0504 S0705 S1005 S1206 S1505 S2010 S2512 and LxW inches .050 x .025 .050 x .040 .075 x .050 .100 x .050 .125 x .063 .150 x .050 .200 x .100

Contextual Info: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide

Contextual Info: 02/04/05 S1206AF High Frequency Thin Film Chip Resistor Standard Grade, Surface Mount, Top Surface Terminations PRODUCT FEATURES • Frequency Range to 20GHz with excellent VSWR characteristics • Produced with the same stringent quality and reliability standards as our QPL S level

Contextual Info: Si APD S6045/S12060シリーズ 低温度係数タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDです。動作電圧の温度係数が低く設計されており、広い温度範囲で安定した動作が可能です。 光波距離計・空間光伝送などの用途に適しています。

s1206

Abstract: S1206 resistor MIL-PRF-914 S0502 SOTA
Contextual Info: High Value Chip Resistors STYLE CHX STYLE AH Pretinned Ni Barrier Terminations Gold Terminations SIZES SIZE CODE S0502 S0504 S0705 S1005 S1206 S1505 S2010 S2512 and LxW inches .050 x .025 .050 x .040 .075 x .050 .100 x .050 .125 x .063 .150 x .050 .200 x .100

Contextual Info: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide

ic viper12a

Abstract: Zener 5.1V chemicon nichicon KMG series Nichicon LXZ Nichicon hm cap 400v 4.7uF SAMWHA wd NICHICON VZ(M) 470uF/25V TYOHM
Contextual Info: Ref. Part List D escriptio n S u p p lie r R1 Wirewound Res. 10ohm 5% 2W R2 Chip Res. 22ohm 5% 0 125W S0805 R3 Chip Res. 56ohm 5% 0 125W S0805 R5 Chip Res. 1Kohm 1% 0.125W S0805 R6-R7-R8 Chip Res. 2.7ohm 5% 0.25W S1206 C8 Chip Cap 100nF 25V X7R S0805 C4 Chip Cap 47nF 50V X7R S0805

Chip Fuse

Abstract: S1206S series
Contextual Info: Chip Fuse Description • ■ ■ ■ ■ S1206S Series High inrush current withstanding capability Compatible with reflow and wave solder Rugged ceramic and glass construction Excellent environmental performance RoHS Compliant ,Lead Free & Halogen Free material

Chip Fuse

Abstract: S1206H series
Contextual Info: Chip Fuse Description • ■ ■ ■ ■ S1206H Series High inrush current withstanding capability Compatible with reflow and wave solder Rugged ceramic and glass construction Excellent environmental performance RoHS Compliant ,Lead Free & Halogen Free material

MIL-PRF-914

Abstract: S0705 SOTA
Contextual Info: High Value Chip Resistors STYLE AH STYLE CHX SIZES SIZE CODE S0502 S0504 S0705 S1005 S1206 S1505 S2010 S2512 and LxW inches .050 x .025 .050 x .040 .075 x .050 .100 x .050 .125 x .063 .150 x .050 .200 x .100 .250 x .125 STYLE CH PdAg Terminations Gold Terminations

si4812b

Abstract: SIC403 VJ0603Y104KXAC SiC403CD-T1-GE3 SIC401
Contextual Info: SiC403 Vishay Siliconix microBUCK SiC403 6 A, 28 V Integrated Buck Regulator with Programmable LDO DESCRIPTION FEATURES The Vishay Siliconix SiC403 is an advanced stand-alone synchronous buck regulator featuring integrated power MOSFETs, bootstrap switch, and a programmable LDO in a

SIHF10N40D-E3

Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

sihp22n6

Abstract: SiHP22N60E-GE3
Contextual Info: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17

forth dimension displays

Abstract: SIHU3N50D-GE3
Contextual Info: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20

Contextual Info: SiP32401A, SiP32402A Vishay Siliconix 1.1 V to 5.5 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES SiP32401A and SiP32402A are slew rate controlled load switches designed for 1.1 V to 5.5 V operation. The devices guarantee low switch on-resistance at 1.2 V

Contextual Info: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

resistor 100k ohm

Abstract: zener diode c5 IPH 40w electronic ballast circuit diagram schematic lamp ballast IR2159 resistor* 100k ohm inductor 20mh WY0222MCMBF0K 680k ohm resistor TRANSISTOR mosfet
Contextual Info: APPLICATION NOTE AN-1021 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA IR2159: 40W/PL-L Lamp Dimmable Ballast By T. Ribarich and E. Thompson TOPICS COVERED Introduction Functional Description Schematic Diagrams Bill of Materials Waveforms / Measurements

Contextual Info: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain

S-1206B30-M3T1G

Abstract: S-1206B33-M3T1G S-1206B27 S-1206 S-1206B12-M3T1G S-1206B13-M3T1G S-1206B31-M3T1G
Contextual Info: Rev. 1.0_01 ULTRA LOW CURRENT CONSUMPTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR S-1206 Series The S-1206 Series is a positive voltage regulator with ultra low current consumption, low dropout voltage, high output voltage accuracy, and 250 mA output current developed based on CMOS technology.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

NTHS-1005

Abstract: NTHS-1205 S-1005N02 S-1012N02
Contextual Info: MODEL NTHS NTC Thermistors Surface Mount Chip FEATURES • W rapa rou nd te rm in a tio n s • A llo w s de sig n fle xib ility fo r use w ith hybrid circu itry • H igh-d en sity m on olithic ce ra m ic con stru ction • A va ila b le in 8m m tap e and reel packaging