S1223 PIN PHOTODIODE Search Results

s1223 pin photodiode

Abstract: IR photodiode S1223 S1223-01
Contextual Info: PHOTODIODE Si PIN photodiode S1223 series For visible to IR, precision photometry Features Applications l High sensitivity l High reliability l High-speed response l Optical measurement equipment l Analytical equipment, etc. S1223: fc=30 MHz S1223-01: fc=20 MHz

S1223-01

Abstract: s1223 pin photodiode uA 741 T KPIN1050E01 S1223 SE-171
Contextual Info: PHOTODIODE Si PIN photodiode S1223 series For visible to IR, precision photometry Features Applications l High sensitivity l High reliability l High-speed response l Optical measurement equipment l Analytical equipment, etc. S1223: fc=30 MHz S1223-01: fc=20 MHz

s1223 pin photodiode

Contextual Info: PHOTODIODE Si PIN photodiode S1223 series For visible to IR, precision photometry Features Applications l High sensitivity l High reliability l High-speed response l Optical measurement equipment l Analytical equipment, etc. S1223: fc=30 MHz S1223-01: fc=20 MHz

hamamatsu S1223

Abstract: s1223 pin photodiode KPIN1050E01 S1223 S1223-01 SE-171
Contextual Info: PHOTODIODE Si PIN photodiode S1223 series For visible to IR, precision photometry Features Applications l High sensitivity l High reliability l High-speed response l Optical measurement equipment l Analytical equipment, etc. S1223: fc=30 MHz S1223-01: fc=20 MHz

S1223-01

Abstract: s1223 pin photodiode S1223 KPIN1050J01 LS1223
Contextual Info: PHOTODIODE Si PINフォトダイオード S1223シリーズ 可視~赤外測光用Si PINフォトダイオード 特長 用途 l 高感度 l 高信頼性 l 高速応答 l 光計測機器 l 分析機器など S1223: fc=30 MHz S1223-01: fc=20 MHz l 低容量

S2858

Abstract: S2551-01 S1190-03 S1723-06 14 pin photodiode s1188 S1190-04 AT82 S1723-04
Contextual Info: PIN Silicon Photodiodes Type No. S1188-02 S1188-06 S 2216-01 S 2216-02 S2839 S2840 S1190 S1190-Q1 S1190-03 S1190-04 S1223 S1223-01 Package Effective Sensitive Area mm (mm) 3-pin TO-18 3-pin TO-18 3-pin TO-18 Radiant Sensitivity Peak Spectral Bp Wavelength

hamamatsu S1223

Abstract: S1223
Contextual Info: Si PIN photodiodes S1223 series For visible to near IR, precision photometry Features Applications High sensitivity in visible to near infrared range Optical measurement equipment High reliability Analytical equipment, etc. High-speed response S1223: fc=30 MHz

Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc

S1223-01

Contextual Info: PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package @/K TO-5 S1223-01 Active Area Effective Size Active Area (mm) (mm2) 2.4X2.8 6.6 3.6X3.6 13 S3071 /K TO-8 (p 5.0 19.6 S3072 @/K TO-5 <f>3.0 7.0 S1863-01 ® /K

Contextual Info: Si PIN Photodiodes 3 Type No. Dim ensional Outline ( P .44-46)/ W indow Material Package @ /K TO-5 TO-8 S1223 S1223-01 S3071 /K S3072 @ /K S3883 ® /K S3399 TO-5 ® /K @ W in d o w m aterial, K: borosilicate glass 28 Active Area Effective Size Active Area

O30100

Contextual Info: Si PIN Photodiodes 4 Type No. S1223 Dimensional Effective Active Outline Active (P.46 to 48)/ Package Area Size Area Window Material ‘1 (m m 2) (mm) /K TO-5 S3071 ®/K TO-8 S3072 ®/K S1223-01 S3883 ®/K S3399 ®/K TO-5 *1 : Window material, K: borosilicate glass

Contextual Info: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.40-43)/ Window Material*' S1223 S1223 01 S3071 S3072 S1863-01 S3883 S3399 S5106 S5107 S3590 01 S3590 03 S3590 05 S3588 03 *1 W i n d o w m aterial, O /K K /K © /K ® /K ® /K ® /R ® /R Short Photo Sensitivity S (A/W) Typ.

Contextual Info: Si PIN Photodiodes 4 Type No. Dim ensional Outline (P.47, 48)/ W indow Material ’’ Active Active Package Area Size S1223 (mm) (mm2) 2.4 X 2.8| 6.6 ! TO-8 ¡ Spectral Response Range X Peak Sensitivity Wavelength (nm) (nm) X 3.6 <|>5.0 /K S3883 ® /K

S1190 hamamatsu

Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
Contextual Info: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

S2840

Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

S2973-01

Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
Contextual Info: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active

S1190-01

Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5