S13017 Search Results
S13017 Price and Stock
Bel Power Solutions CS1301-7RDC/DC CONVERTER 12V 100W |
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CS1301-7R | Bulk | 3 | 1 |
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Bel Fuse CS1301-7RDC/DC Power Supply Single-OUT 12V 8A 100W 17-Pin - Bulk (Alt: CS1301-7R) |
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CS1301-7R | Bulk | 111 Weeks | 10 |
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CS1301-7R | 54 Weeks | 10 |
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Bel Fuse LS1301-7RAC/DC Power Supply Single-OUT 12V 8A 100W 17-Pin - Bulk (Alt: LS1301-7R) |
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LS1301-7R | Bulk | 111 Weeks | 5 |
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Radiall VS130178Circular MIL Spec Connector RF VCR 08DA 28-2P CD5 F4 |
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Glenair Inc 448HS130NF1708S115Circular MIL Spec Backshells ACCESSORIES - BANDING/CRIMP ADAPTER |
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S13017 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252) |
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IRFR024, IRFU024, SiHFR024 SiHFU024 O-252) O-251) | |
S13017Contextual Info: IRFR110, SiHFR110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated |
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IRFR110, SiHFR110 O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A S13017 | |
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Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION |
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IRFR120, IRFU120, SiHFR120 SiHFU120 O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252) |
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IRFR024, IRFU024, SiHFR024 SiHFU024 O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252) |
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IRFR014, IRFU014, SiHFR014 SiHFU014 O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating |
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IRFR210, IRFU210, SiHFR210 SiHFU210 O-252) O-251) | |
IRFR014TRPBFContextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252) |
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IRFR014, IRFU014, SiHFR014 SiHFU014 O-252) O-251) IRFR014TRPBF | |
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Contextual Info: IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and |
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IRFR1N60A, IRFU1N60A, SiHFR1N60A SiHFU1N60A O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating |
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IRFR210, IRFU210, SiHFR210 SiHFU210 O-252) 2002/95/EC. | |
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Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) |
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IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: SQJ968EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested 60 RDS(on) () at VGS = 10 V 0.0336 RDS(on) () at VGS = 4.5 V |
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SQJ968EP AEC-Q101 SQJ968EP-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and |
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IRFR1N60A, IRFU1N60A, SiHFR1N60A SiHFU1N60A O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
s8210
Abstract: 91196
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IRFL9110, SiHFL9110 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s8210 91196 | |
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Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION |
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IRFR120, IRFU120, SiHFR120 SiHFU120 2002/95/EC. 2002/95/EC | |
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Contextual Info: IRFL214, SiHFL214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D Third generation power MOSFETs from Vishay provide the |
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IRFL214, SiHFL214 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 Surface Mount |
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IRFL9014, SiHFL9014 OT-223 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SQJ992EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.0562 RDS(on) () at VGS = 4.5 V 0.0745 ID (A) per leg 8 Configuration Dual PowerPAK |
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SQJ992EP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: IRFR110, SiHFR110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated |
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IRFR110, SiHFR110 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |