S1321 Search Results

Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b

Contextual Info: SIEMENS BUZ 90 A SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 Type Yds Id f lDS on Package Ordering Code BUZ 90 A 600 V 4A 2Ù. TO-220 AB C67078-S1321 -A3 Maxim um Ratings Parameter Symbol Continuous drain current

VPT05155

Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

buz90a

Abstract: uz90a buz90
Contextual Info: SIEMENS BUZ 90 BUZ 90 A SIPMOS Power Transistors • • • N channel Enhancem ent mode Avalanche-rated Ordering Code Type ^DS ¡0 To ^DS on Package 11 BUZ 90 600 V 4.5 A 28 'C 1 .6 il TO -220 AB C67078-S1321-A2 BUZ 90 A 600 V 4.0 A 30 "C 2.0 a TO -220 AB

diode sy 710

Abstract: sy 710 diode transistor buz 90 transistor buz 350 buz90
Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vbs 600 V b 4.5 A ^DS on Package Ordering Code 1 .6 « TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

BUZ90

Abstract: BUZ90A C67078-S1321-A3 BUZ 90 C67078-S1321-A2
Contextual Info: SIPMOS Power Transistors BUZ 90 BUZ 90 A ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID TC RDS on Package 1) Ordering Code BUZ 90 600 V 4.5 A 28 ˚C 1.6 Ω TO-220 AB C67078-S1321-A2 BUZ 90 A 600 V 4.0 A 30 ˚C 2.0 Ω TO-220 AB C67078-S1321-A3

BUZ90

Abstract: C67078-S1321-A2
Contextual Info: BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 90 600 V 4.5 A 1.6 Ω TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ90A

Abstract: diode gp 634 buz90 sy 320 diode
Contextual Info: SIEMENS BUZ 90 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 A Vbs 600 V h 4A ^>S on 2Q Package Ordering Code TO-220 AB C67078-S1321 -A3 Maximum Ratings Parameter Symbol Continuous drain current Values b Tc = 30 °C

BUZ90

Abstract: BUZ90A C67078-S1321-A3
Contextual Info: Not for new designs BUZ 90 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 90 A 600 V 4A 2Ω TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol

BUZ90

Abstract: C67078-S1321-A2
Contextual Info: Not for new designs BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 90 600 V 4.5 A 1.6 Ω TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol

BUZ90A

Abstract: BUZ90 C67078-S1321-A3
Contextual Info: BUZ 90 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 90 A 600 V 4A 2Ω TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Continuous drain current

BUZ90

Abstract: BUZ90S BUZ90A 40n120 C67078-S1321-A3
Contextual Info: SIEMiHS SIPMOS Power MOS Transistors BUZ 90 BUZ 90 A = 600 V = 4 .5 /4 .0 A ’ D S o n • • • • = 1 .6 /2 .0 Û N channel Enhancement mode Avalanche-proof Package: T O -220A B ') Type Ordering code BUZ 90 C67078-S1321-A2 BUZ 90 A C67078-S1321-A3

Contextual Info: Si4010DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.0034 at VGS = 10 V 31.3 0.0044 at VGS = 4.5 V 27.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested 22.5 nC

Contextual Info: SQM120N06-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0039 ID (A) • Package with Low Thermal Resistance

Contextual Info: IS0809 B U R R -B R O W N [ ] Isolated 16-Bit Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • 100kHz SAMPLING RATE The ISO 80 9 is a lo w -p o w er isolated sam p lin g A D C • 1500Vims ISOLATION CONTINUOUS usin g state-of-the-art C M O S structures and high v o lt­

12FH3

Abstract: nec v50
Contextual Info: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT juPD16633B 312 OUTPUT TFT-LCD SORCE DRIVER COMPATIBLE WITH 64 GRAY SCALES The ¿iPD16633B is a source driver for TFT-LCDs capable of dealing with displays with 64 gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of 260,000

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

Contextual Info: Si4038DY Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. ID (A)a 0.0024 at VGS = 10 V 42.5 0.0032 at VGS = 4.5 V 36.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package

Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package

Contextual Info: SPICE Device Model Si3476DV www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si4101DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: SiR646DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0038 at VGS = 10 V 60 0.0053 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 16.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification • DC/DC Converters