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lsi53c710

Abstract: 53c770 53C700 LSI53C770 *720SE 75LBC976 intel 80386dx intel 80386sx TEA 0663 TEA 5560
Contextual Info: TECHNICAL MANUAL LSI53C770 Ultra SCSI I/O Processor Version 2.1 March 2001 S14061 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

Contextual Info: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = 10 V 30 a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40 a 0.0070 at VGS = 4.5 V

Contextual Info: SPICE Device Model SiSA14DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SiA931DJ www.vishay.com Vishay Siliconix Dual P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SiA442DJ www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C