SISA14DN Search Results

Contextual Info: SiSA14DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SPICE Device Model SiSA14DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SiSA14DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) 20 9.4 nC 0.00510 at VGS = 10 V 30 0.00850 at VGS = 4.5 V • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Contextual Info: SiSA14DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) 20 9.4 nC 0.00510 at VGS = 10 V 30 0.00850 at VGS = 4.5 V • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in