S1416 Search Results

PTI 30 040 pa

Abstract: t04 68 3 pin diode sg ag20 LP1 K06 1LPN3 AC03 nec ae02 marking HT15 22 marking ag01 TWN AA 427
Contextual Info: User’s Manual µPD98412 NEASCOT-X15 Advanced ATM Switch LSI Document No. S14169EJ2V0UMJ1 (2nd edition) Date Published October 2000 N CP(K) Printed in Japan 1999 [MEMO] 2 User’s Manual S14169EJ2V0UM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

t04 68 3 pin transistor

Abstract: MD 202 flame relay AC03 nec alps lcd 14 pin t04 68 3 pin diode transistor z5t S3043 S3044 STM-16 z046
Contextual Info: User’s Manual µPD98414 NEASCOT-P70TM ATM 2.4Gbps SONET Framer Document No. S14166EJ4V0UM00 (4th edition) Date Published December 2001 J CP(K) 1999 1991 Printed in Japan [MEMO] 2 User's Manual S14166EJ4V0UM SUMMARY OF CONTENTS CHAPTER 1 GENERAL .13

08P06P

Abstract: 18p06p 30P06P 80p06p 09P06PL 613SPV q67041-s1416 BSS83P ss92 09P06P
Contextual Info: Technical data - P-channel devices Sales Ordering Mar- Configuration VDS code code king BSS 83P Q67041-S1416 YAs BSS 84P YBs BSS 84PW YBs BSO 613SPV BSP 613P BSP 170P BSP 171P BSP 315P SPD 30P06P SPD 18P06P SPD 09P06PL SPD 08P06P SPU 30P06P SPU 18P06P SPU 09P06PL

S1555

Abstract: S1509 GRM01 S1416 VT47 GRM015 S1512 SKY65053-377LF-EVB
Contextual Info: DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65053-377LF Block Diagram

Contextual Info: SPICE Device Model SUP40N25-60 www.vishay.com Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si2301CDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

3830S

Contextual Info: SPICE Device Model SQ4284EY www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: DATA SHEET SKY65051-377LF: 0.45-6.0 GHz Low-Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65051-377LF Block Diagram

ic 313

Abstract: S3043 S3044
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD98414 2.4 Gbps ATM SONET FRAMER The µPD98414 NEASCOT-P70 is one of ATM LSIs and provides the functions of the TC sublayer of the SONET/SDH-base physical layer of the ATM protocol specified by the ATM Forum. Its main functions include a transmission function for mapping an ATM cell passed from a high-end ATM layer

S1509

Abstract: GRM015 S1416 S1512 VT47 GRM01
Contextual Info: DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65053-377LF Block Diagram

GRM01

Abstract: SKY65053-377LF s1416
Contextual Info: PRELIMINARY DATA SHEET SKY65053-377LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65053-377LF Block Diagram

HTA06

Abstract: hta08 CBA07 HTD12 HTA12 ic 351 HTA09 CBD16 12-PHY HTA01
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: SiC781CD www.vishay.com Vishay Siliconix 50 A, VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC781 is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. Packaged

Contextual Info: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -60 RDS(on) () VGS = -10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 DESCRIPTION G D

Contextual Info: IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.20 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single Surface mount Available in tape and reel

Contextual Info: IRFL110, SiHFL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION Third generation power MOSFETs from Vishay provide the

NEC AC08

Abstract: S3043 S3044
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD98414 2.4 Gbps ATM SONET FRAMER The µPD98414 NEASCOT-P70 is one of ATM LSIs and provides the functions of the TC sublayer of the SONET/SDH-base physical layer of the ATM protocol specified by the ATM Forum. Its main functions include a transmission function for mapping an ATM cell passed from a high-end ATM layer

Contextual Info: SPICE Device Model Si1411DH www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si1302DL www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SUP50N03-5m1P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si2307CDS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SUM110N10-09 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 200 ° MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SUP85N15-21 www.vishay.com Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C