S1680 Search Results
S1680 Price and Stock
Kinetic Technologies HK Ltd KTS1680AEUZ-TROVERVOLTAGE PROTECTED LOAD SWITC |
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KTS1680AEUZ-TR | Digi-Reel | 6,935 | 1 |
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Kinetic Technologies HK Ltd KTS1680CEUZ-TROVERVOLTAGE PROTECTED LOAD SWITC |
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KTS1680CEUZ-TR | Cut Tape | 5,662 | 1 |
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Banner Engineering Corp EZLS-1680EZ-SCREEN LS SNAP-ON 1680MM |
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EZLS-1680 | Box | 1 |
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EZLS-1680 | Bulk | 1 |
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Cirrus Logic CS168002-FZZIC LED DRIVER OFFL TRIAC 16TSSOP |
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CS168002-FZZ | Bulk |
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Integrated Silicon Solution Inc IS42S16800J-6TLIC DRAM 128MBIT PAR 54TSOP II |
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IS42S16800J-6TL | Tray | 108 |
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IS42S16800J-6TL | 12 Weeks | 432 |
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IS42S16800J-6TL | Bulk | 108 |
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IS42S16800J-6TL | 28 Weeks | 108 |
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IS42S16800J-6TL | 21 Weeks | 108 |
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S1680 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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S16-800 | Sussex Semiconductor | .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE | Original | 148.01KB | 7 | |||
S16-800 | Sussex Semiconductor | 16 AMP STANDARD RECOVERY RECTIFIER DIE | Original | 73.72KB | 3 | |||
S16-800-200 | Sussex Semiconductor | .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE | Original | 148.01KB | 7 | |||
S16-800-200 | Sussex Semiconductor | RECTIFIER DIE | Original | 88.64KB | 4 | |||
S16-800-50 | Sussex Semiconductor | .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE | Original | 148.01KB | 7 | |||
S16-800-50 | Sussex Semiconductor | RECTIFIER DIE | Original | 88.64KB | 4 |
S1680 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Sussex Semiconductor
Abstract: rectifier diode piv table 1N647 s16 transistor 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006
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S25400
Abstract: Sussex Semiconductor 100 Amp current 1000 volt diode s16 transistor SE 40 RECTIFIER 1N4001 1N4002 1N4003 1N4004 1N4005
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D42S17800-70Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description T he /¿S16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and th e /S16800, 42S17800 can exe cute CAS be fore RAS s e lf refresh. |
OCR Scan |
uPD42S16800 uPD4216800 uPD42S17800 uPD4217800 PD42S16800, 42S17800, /IPD42S16800, 42S17800 28-pin D42S17800-70 | |
Contextual Info: DATA SHEET SKY12236-11: High IIP3, 2.6 to 5.0 GHz Voltage-Controlled Variable Attenuator Applications • Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains General wireless systems including WiMAX, LTE, WCDMA, |
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SKY12236-11: J-STD-020) 202529D | |
Contextual Info: DATA SHEET SKY12235-11: High IIP3 1.4 to 2.4 GHz Voltage-Controlled Variable Attenuator Applications Control Voltage Control Voltage RF In/Out RF Out/In • Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains |
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SKY12235-11: J-STD-020) 201933D | |
Contextual Info: HIGH DENSITY 4 Byte — 8 Byte DIMM Sockets 100 position • Provides 4-byte support for 32-bit applications 112 positon MO-172 9 Supports video RAM applications 168 position MO-161 9 Offers all voltage and application keys supported by JED EC 9 Provides 8-byte support for 64-bit |
OCR Scan |
32-bit MO-172 MO-161 64-bit MIL-STD-1344. | |
100 Amp current 1000 volt diode
Abstract: Rectifier 6 amp 200 volt S25400 100 Amp current 1000 volt rectifier SE 40 RECTIFIER MPS 726 S3-500-150 S3-50-150 S25-50-50 S1-1000-150
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Contextual Info: DATA SHEET SKY12233-11: High IIP3 2.1 to 3.1 GHz Voltage-Controlled Variable Attenuator Applications Control Voltage Control Voltage RF In/Out RF Out/In • Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains |
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SKY12233-11: J-STD-020) 201925C | |
DIODE 1N649
Abstract: SZUFD16 1.5ke series SZU16 Sussex Semiconductor 1N4172A 1N4973 SFD16 S100 p4k 20a
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SZU35 SZZ35 SZUFD16 SZZD16 015in 009in 95Pb/5Sn DIODE 1N649 SZUFD16 1.5ke series SZU16 Sussex Semiconductor 1N4172A 1N4973 SFD16 S100 p4k 20a | |
s16 transistor
Abstract: 1N5804 S25400 S3-400-150 S1-400-150 S1-600-150 S1-800-150 S3-100-150 51000200 S3-500-150
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S40-600-50 S16-600-50 S5-600-50 s16 transistor 1N5804 S25400 S3-400-150 S1-400-150 S1-600-150 S1-800-150 S3-100-150 51000200 S3-500-150 | |
Contextual Info: DATA SHEET SKY12235-11: High IIP3 1.4 to 2.4 GHz Voltage-Controlled Variable Attenuator Applications Control Voltage Control Voltage RF In/Out RF Out/In • Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains |
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SKY12235-11: J-STD-020) 201933E | |
Contextual Info: DATA SHEET SKY12233-11: High IIP3 2.1 to 3.1 GHz Voltage-Controlled Variable Attenuator Applications Control Voltage Control Voltage RF In/Out RF Out/In • Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains |
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SKY12233-11: J-STD-020) 201925D | |
Contextual Info: DATA SHEET SKY12235-11: High IIP3 1.4 to 2.4 GHz Voltage-Controlled Variable Attenuator Applications Control Voltage Control Voltage RF In/Out RF Out/In • Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains |
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SKY12235-11: J-STD-020) 201933F | |
Contextual Info: DATA SHEET SKY12232-21: High IIP3 2.65 to 3.65 GHz Voltage-Controlled Variable Attenuator Applications • Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains General wireless systems including WiMAX, LTE, WCDMA, |
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SKY12232-21: J-STD-020) 201930E | |
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2933T
Abstract: 6MCM106MA fdd power connector 171826-4 uPD720122 8D139 renesas catalogue AT-049 Nippon capacitors s1680
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dT-0138A FB-2345B) S16801EJ1V0UM ET-0138 2933T 6MCM106MA fdd power connector 171826-4 uPD720122 8D139 renesas catalogue AT-049 Nippon capacitors s1680 | |
S16801DQContextual Info: _SÌ6801DQ Vishay Siliconix N- and P-Ch, Reduced Qg, Fast Switching MOSFET C Ï PR O D U C T SUMMARY V o » V ! N-Channel P-Channel r d s <o n (Q ) I d (A ) 0.160 3 V q s ~ 4.5 V ± 1 .9 0 .260 @ V GS = 3.0 V ± 1 .5 20 |
OCR Scan |
6801DQ Si6801 S-56944-- 23-Nov-98 S16801DQ | |
S25400
Abstract: se 140 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 S4020 1N5402
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S40-600-50 S16-600-50 S5-600-50 S25400 se 140 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 S4020 1N5402 | |
Contextual Info: DATA SHEET SKY12236-11: High IIP3, 2.6 to 5.0 GHz Voltage-Controlled Variable Attenuator Applications • Automatic power leveling/gain control circuits in cellular base stations and point-to-point radio IF chains General wireless systems including WiMAX, LTE, WCDMA, |
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SKY12236-11: J-STD-020) 202529E | |
s16 transistor
Abstract: 1N4006 1N4007 1N5402 1N645 1N647 1N4001 1N4002 1N4003 1N4004
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ORDERIN700 S40-600 S16-600 S5-600 s16 transistor 1N4006 1N4007 1N5402 1N645 1N647 1N4001 1N4002 1N4003 1N4004 | |
8D139
Abstract: BLM41AF800SN1 6MCM106MA Y1 XTAL 30Mhz S15829J MNR35P3RJ103 uPD720122 uPD720122GC-9EU SLR-322-R 3a54
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PD720122 ET-0138 S16801JJ1V0UM00 S16801JJ1V0UM TMMS-115-01-F-Q FB-2345B 8D139 BLM41AF800SN1 6MCM106MA Y1 XTAL 30Mhz S15829J MNR35P3RJ103 uPD720122 uPD720122GC-9EU SLR-322-R 3a54 | |
S100-600
Abstract: 100 Amp current 1000 volt diode diode 1N5408 specifications 1n5408n Sussex Semiconductor 1N649 s16 transistor 1N4002 1N4003 1N4005
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SPECIFICAT700 S40-600 S16-600 S5-600 S100-600 100 Amp current 1000 volt diode diode 1N5408 specifications 1n5408n Sussex Semiconductor 1N649 s16 transistor 1N4002 1N4003 1N4005 |