S21 OPTO Search Results

nec reed relay

Abstract: REED RELAYS 5 high speed solid state relay thyristor controlled dc digital drive theory Reed Relay Technical Applications Information NEC RELAY PS7801P NEC SOI Thyristor NEC PS7801
Contextual Info: High Current Circuit High Current Circuit A p p l i c at i o n N o t e AN 3008 Control Current Circuit Control Current Circuit NEC Solid State Relays for ATE Applications by Van N. Tran Staff Applications Engineer, CEL Opto Semiconductors Figure 2-1 Electro-Mechanical Relay

TLP 817

Abstract: moc 641 CNY 817 TLP 621 TOSHIBA NEC ps2401 TLP766J MOTOROLA moc cny 57 moc 410 optokoppler
Contextual Info: Optokoppler Optocouplers Vergleichsliste Cross reference D iese Liste erhebt keinen A n sp ru ch auf V ollstän dig keit, im Einzelfall bitte die e n tsp re ch e n d e n D a te nb lätter ve rg le ich e n . (This list do es not cla im be in g com p le te , therefore,

S2508

Contextual Info: TOSHIBA de~Jich 725 G aooosii a ln {DISCRETE/OPTO} 9097250 T O SH IB A <D I S C R E T E /O P T O fi . 39C 00511 D O UHP~L o U H F ^ L Band Low Noie e Amplifier Applications o High Speed Switohing Applications". NF = 2.0 dB K f = 500 M H z) 8 , = 15 dB ( f = 500 MHz )

transistor s11 s12 s21 s22

Abstract: UPA802T 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 NE681 transistor j50
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz

1S1111

Abstract: NEZ1414-2E 1S2116
Contextual Info: 2 W 14 GHz INTERNALLY NEZ1414-2E MATCHED POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES • HIGH OUTPUT POWER: 2 W MIN PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB MIN 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGING • INTERNALLY MATCHED FOR OPTIMUM

NEZ1414-4E

Contextual Info: 4 W 14 GHz INTERNALLY NEZ1414-4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

UPA802T

Abstract: a 3120 0537 741 LEM NE681 S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz

c 5929 transistor

Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299
Contextual Info: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz

transistor j50

Abstract: c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 NE686 S21E
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz

NEZ1414-8E

Abstract: 39.5dB GaAs FET
Contextual Info: 8 W 14 GHz INTERNALLY NEZ1414-8E MATCHED POWER GaAs MES FET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5dB (MIN) PACKAGE OUTLINE T-61 • HIGH GAIN: 6.5 dB TYP • HIGH RELIABILITY GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • CLASS A OPERATION

AZ 2535 08 101

Abstract: transistor 9747 c 5929 transistor C 5478 transistor UPA807T 6292 transistor NE686 S21E UPA807T-T1 UPA807T-T1-A
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz

NEZ1414-3E

Contextual Info: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

16850

Contextual Info: 2 W 14 GHz INTERNALLY NEZ1414-2E MATCHED POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES • HIGH OUTPUT POWER: 2 W MIN PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB MIN 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGING • INTERNALLY MATCHED FOR OPTIMUM

Contextual Info: 4 W 14 GHz INTERNALLY NEZ1414-4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

tc 2608

Contextual Info: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

transistor pt 6007

Abstract: NPN transistor 9418 c 5929 transistor C 5478 transistor transistor c 6093 9418 transistor transistor 9747 transistor k 4212 5294 power transistor transistor 5478
Contextual Info: SILICON TRANSISTOR UPA807T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz

Contextual Info: 5 W 14 GHz INTERNALLY NEZ1414-5E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz

transistor s11 s12 s21 s22

Abstract: 2SC5336 NE856M02 NE856M02-T1 S21E NEC JAPAN 2415 0458 npn
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz

Micro-X Marking 865

Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION

transistor s11 s12 s21 s22

Abstract: NE856M02-T1-AZ NE856M02
Contextual Info: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor

NE67383

Abstract: NE67300 2SK407 NEC NE67300 MESFET 8S222 NE673 NEC NE67383
Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • VERY HIGH fMAX: 100 GHz 20 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER Triple Epitaxial Technology

transistor 8331

Abstract: LD SOT 423 transistor marking v64 ghz kf 982 NE34018 NE34018-TI-64
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN:

transistor 8730

Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT