S28I Search Results
S28I Price and Stock
Microchip Technology Inc MCP6S28-I-SLIC OPAMP PGA 8 CIRCUIT 16SOIC |
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MCP6S28-I-SL | Tube | 4,569 | 1 |
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Microchip Technology Inc MCP6S28-I-PIC OPAMP PGA 8 CIRCUIT 16DIP |
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MCP6S28-I-P | Tube | 191 | 1 |
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Amphenol ProLabs C-S28CIS28IN-P2MCisco SFP-H25G-CU2M to Intel XXV |
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C-S28CIS28IN-P2M | 1 |
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Amphenol ProLabs C-S28HPS28IN-P5MHP JL489A to Intel XXVDACBL5M Co |
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C-S28HPS28IN-P5M | 1 |
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Amphenol ProLabs C-S28DES28IN-P2MDell DAC-SFP-25G-2M to Intel XXV |
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C-S28DES28IN-P2M | 1 |
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S28I Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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circuit of rowa television
Abstract: toshiba b54
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OCR Scan |
432-WORD 18-BIT 18-bit TC59RM818MB B2M-wordX18 32M-wordX 600MHz 32M-word 711MHz circuit of rowa television toshiba b54 | |
Contextual Info: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board. |
OCR Scan |
THMR2N16-6/-7/-8 456-WORD 16-BIT THMR2N16 TC59RM816MB 256M-word 600MHz -16CSP | |
da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
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128/144Mbit 256Kx16/18x32s) 128/144-Mbit 600MHz 800MHz DL0059-00 da53 HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845 | |
direct rdram rambus 1200Contextual Info: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high |
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600MHz DL-0118-07 direct rdram rambus 1200 | |
da53
Abstract: DB26 0195c Outline T39
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512Kx16/18x32s) 600MHz DL-0118-010 da53 DB26 0195c Outline T39 | |
da53
Abstract: DB26
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8Mx16/18x4i) DL0117-010 da53 DB26 | |
Contextual Info: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board. |
OCR Scan |
108f864-WORD 18-BIT 864-word 18-bit TC59RM818MB 64M-word 64M-wordXl8 600MHz 711MHz | |
TC59RM716GB
Abstract: 9T20T
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OCR Scan |
TC59RM716GB-8 128-M 800-M TEST77 TEST78 P-BGA54-1312-1 TC59RM716GB 9T20T | |
HYB25M144180C-653
Abstract: HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram
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128/144-MBit 128/144-Mbit TEST77 TEST78 HYB25M144180C-653 HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram | |
diode t29
Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
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EDR2518ABSE EDR2518AB EDR2518AB 1066MHz 288Mbits 800MHz 9375ns M01E0107 diode t29 EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E | |
64H40
Abstract: circuit of rowa television CM05
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OCR Scan |
728-WORD 16-BIT 16-bit TC59RM816MB 128M-word 600MHz 128M-wordX16 711MHz 64H40 circuit of rowa television CM05 | |
DGA4
Abstract: loqb 47KQ B23A B85A Toshiba Rambus IC
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OCR Scan |
432-WORD 16-BIT 16-bit TC59RM816MB 32M-wordXl6 32M-word 600MHz 711MHz DGA4 loqb 47KQ B23A B85A Toshiba Rambus IC | |
da53
Abstract: DB26 BE1210 DB62 ROP10
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256/288-Mbit 512Kx16/18x32s) 256/288-Mbit 600MHz 800MHz DL0060 DL0060 da53 DB26 BE1210 DB62 ROP10 | |
da53
Abstract: DB26 DL010
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256/288-Mbit 1Mx16/18x16d) 256/288-Mbit 600MHz 800MHz DL0105 DL0105 da53 DB26 DL010 | |
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da53
Abstract: DB26 KM416RD8AC KM418RD8AC
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KM416RD8AC /KM418RD8AC 128/144Mbit da53 DB26 KM418RD8AC | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. P 128 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where |
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PD488448 128M-bit | |
Contextual Info: 1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high |
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512Kx16/18x32s) 600MHz DL-0118-050 | |
Contextual Info: KM416RD8AC D /KM418RD8AC(D) Preliminary Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.0 July 1999 Page -2 Rev. 1.0 Jul. 1999 KM416RD8AC(D)/KM418RD8AC(D) Preliminary Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary |
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KM416RD8AC /KM418RD8AC 128/144Mbit | |
745 B36 diode
Abstract: micron sensor spd 357 RM01 MT8VR6416A
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MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A 184-pin 128MB 256MB 745 B36 diode micron sensor spd 357 RM01 MT8VR6416A | |
da53
Abstract: 144MD-50-711 144MD-53-600 128MD-40-800 128MD-50-711 128MD-53-600 144MD-40-800
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128/144-Mbit 256Kx16/18x32s) 128/144-Mbit 600MHz 800MHz DL0059 DL0059 da53 144MD-50-711 144MD-53-600 128MD-40-800 128MD-50-711 128MD-53-600 144MD-40-800 | |
RDRAM ClockContextual Info: 1066 MHz RDRAM 256/288 Mb 4Mx16/18x4i Advance Information Overview The RDRAM device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high |
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DL-0119-030 RDRAM Clock | |
da53
Abstract: DB26 DL0054 ycl dc 101
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4Mx16/18x4i) DL-0119-010 da53 DB26 DL0054 ycl dc 101 | |
Contextual Info: DATA SHEET 288M bits Direct Rambus DRAM µPD488588 512K words x 18 bits × 32s banks Description Features The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any |
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PD488588 PD488588 288Mbits 600MHz 800MHz M01E0107 | |
Contextual Info: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History |
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K4R271669A 128Mbit |