S2L 78 Search Results

Contextual Info: Minimate Range - S2L/B2L 3.5 Since conductors with cable sizes of up to 1 mm2 can be connected, the Minimate Range is a positive alternative to 2.5/2.54 mm pitch connectors. In particular because it uses up to 10% less space on the PCB. At the same time, due to its tension

1283310

Abstract: LB1807 lb1809 148781 front panel ls36 1-57748-0
Contextual Info: Minimate Range - S2L/B2L 3.5 Since conductors with cable sizes of up to 1 mm2 can be connected, the Minimate Range is a positive alternative to 2.5/2.54 mm pitch connectors. In particular because it uses up to 10% less space on the PCB. At the same time, due to its tension

1748600000

Abstract: TI 36 1748020000 1748010000 1727570000
Contextual Info: Minimate Range- S2L/B2L 3.5 a t—; - •] <0 b 20.6 r " " C _L a • I Technical data VDE UL CSA Technical data VDE UL CSA Technical data VDE UL CSA Rated voltage V 100* 150 50 Rated voltage (V) 100* 50 50 Rated voltage (V) 100- 150 50 Rated current (A)

Contextual Info: Product Selection Matrix 3.50 m m p ilc h S2L/E52L 3.5 • 150 V 3.50 mm I 5.00 mm yes no p. 86 | no yes p. 86 I p. 106 p. 106 p. 107 p 107 yes SLA / BLA STV S/STW S • 300 V • 10 A • 22. .12 AWG •2 6 . 12 AWG 5.08 mm no Powermate Range • 300 V

E-62291-T

Abstract: S2L 04 FUSE ZKS E-62291 WDU-16 weidmuller fuse AWM E STYLE 2464 Weidmuller plc WDU16
Contextual Info: Datasheet PLC Interface Modules QuickBlock Universal PL C Interfa ce NEW C om pl et e Uni ver s al PL C S y ste m f o r wiri ng u p t o a n y P L C. T his allo ws fo r : • Inventory reduction: field module and cable under one part number • Rail space and labor reduction, 8 channels or 16

Contextual Info: DR A M M O D U L E KMM466F803BS2-L 8Mx64 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 4 66 F 80 3B S2-L Revision History Version 0.0 (Sept, 1997) , Removed two AC parameters tCACP(access time from CAS) and tAAP(access tim e tro m col. addr.) in AC CHARACTERISTICS.

Contextual Info: MDRE>66; UJSV SGEUKHKGS TRGEKCNKTUT MDRE>76 UGEJPKECN TRGEKHKECUKQPT QH TKPING3RJCTG TKNKEQP DSKFIG SGEUKHKGS WQNUCIG SCPIG 3 ;6 nj 7666 Wjgnm EVSSGPU 3 >46 Chk`l`m HGCUVSGT 0 Tolb` jp`lgj\_ l\ndib@ 78; Chk`l`m k`\f 0 Njq ajlq\l_ pjgn\b` _ljk MDRE3>576 OGEJCPKECN FCUC

he 234

Contextual Info: MDRE>66; DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT MDRE>76 UGEJPKECN TRGEKHKECUKQPT QH TKPING3RJCTG TKNKEQP DSKFIG SGEUKHKGS WQNUCIG SCPIG 3 ;6 nj 7666 Wjgnm EVSSGPU 3 >46 Chk`l`m HGCUVSGT 0 Tolb` jp`lgj\_ l\ndib@ 78; Chk`l`m k`\f 0 Njq ajlq\l_ pjgn\b` _ljk

chkm

Abstract: he 234
Contextual Info: MDRE>66; DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT MDRE>76 UGEJPKECN TRGEKHKECUKQPT QH TKPING3RJCTG TKNKEQP DSKFIG SGEUKHKGS WQNUCIG SCPIG 3 ;6 nj 7666 Wjgnm EVSSGPU 3 >46 Chk`l`m HGCUVSGT 0 Tolb` jp`lgj\_ l\ndib@ 78; Chk`l`m k`\f 0 Njq ajlq\l_ pjgn\b` _ljk

s2l 78

Abstract: 281-1406-ND 281-1408-ND 281-1448-ND 12AWG 281-1414-ND Weidmuller BLZ 5.08 281-1943-ND 281-1181-ND 281-1849-ND
Contextual Info: p114-118 Weidmuller Term. Blk 3/6/06 10:01 AM Page 1 Terminal Blocks 6.2 4.4 8.3 Ø 1.3 16.75 Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm

CD 1691 CB

Abstract: TELEFUNKEN O 670 VL sl2 357
Contextual Info: Temic BFP67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.

1250410

Abstract: 100352 BK SMK 1500 162554-000 PA66 - GF 25 relay
Contextual Info: Weidmüller – Partner in Industrial Connectivity 2 PCB terminal blocks, PCB connectors, panel feedthrough terminal blocks and electronics housings Catalogue 2013 Let’s connect. Catalogue 2013 OMNIMATE – device connectivity As experienced experts we support our customers and partners around the world

zo 107 NA P 611

Abstract: BFR96 L 0403 817 BFR96T
Contextual Info: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain

Contextual Info: I Ordering number : ENN6578 NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions Features unit : mm • Low noise : NF=1.5dB typ f=2GHz . • High cut-off frequency : fx=10G H z typ (V cE =l V). 2 1 8 3

955 539 ic

Abstract: BFP81 0211s ix 0640
Contextual Info: Tem ic BFP81 Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

temic 0675

Abstract: 7334
Contextual Info: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

f39e

Contextual Info: 0 N t e œ (D N “ I o - - tsd — — I 3 > - J 7. 2. ^ Z h . -— (HOLE' O l A 'O 'i FIG.3 j ;z: - 708-5302 F/ G, 2 *>DIH*i U^-C J £ > 'rc t> — - — I a. a n « a e m i* 6. « • A _ k o N . a c c u m u la t e ^ \ TOLERANCE f.sc 3125-'" *7 i» >- :7~c o S 3 S 5 - N Û . 2<t? Z3

Contextual Info: TOSHIBA 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE W ÊF mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF = 1.8dB, |S ie l = 9.5dB f=2GHz U nit in mm 2 2 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm w êf Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0.5 2.5 -0 .3 + 0.25 Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2—7.5dB f —2GHz ^1-5 —0 .1 5 1 «o o

CL31A

Abstract: CL05A
Contextual Info: August 2009 MULTILAYER CERAMIC CAPACITORS We, Samsung, declare that our component MLCC is produced in accordance with EU RoHS directive. 1. RoHS Compliance and restriction of Br The following restricted materials are not used in packaging materials as well as products in compliance with the law and restriction.

MBS4992

Abstract: MBS4991 equivalent MBS4991 triac phase control circuits triac phase control B50C bidirectional switch scr triggering
Contextual Info: MBS4991 silicon MBS4992 SILICON BIDIRECTIONAL SWITCH (PLASTIC) 6.0-10 VOLTS 500 mW SILICON BIDIRECTIONAL SWITCH . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors.

ic ma 8910

Abstract: 2SC4319
Contextual Info: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, |S2iç|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

sem 2106

Abstract: TRANSISTOR 3856
Contextual Info: 2SC4317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r a 3 1 7 M F • V ■ m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF - l.ldB , |S 2 ie l2 = 13dB f=lGHz + 0.5 2.5 -0.3 +0.25

Contextual Info: TOSHIBA 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC484Q Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. N F = l.ldB , |S2 ie|2= 13dB f=lGHz MAXI MUM RATI NGS (Ta = 2 5°C) CHARACTERISTIC Collector-Base Voltage