S2L 92 Search Results

1283310

Abstract: LB1807 lb1809 148781 front panel ls36 1-57748-0
Contextual Info: Minimate Range - S2L/B2L 3.5 Since conductors with cable sizes of up to 1 mm2 can be connected, the Minimate Range is a positive alternative to 2.5/2.54 mm pitch connectors. In particular because it uses up to 10% less space on the PCB. At the same time, due to its tension

Contextual Info: Product Selection Matrix 3.50 m m p ilc h S2L/E52L 3.5 • 150 V 3.50 mm I 5.00 mm yes no p. 86 | no yes p. 86 I p. 106 p. 106 p. 107 p 107 yes SLA / BLA STV S/STW S • 300 V • 10 A • 22. .12 AWG •2 6 . 12 AWG 5.08 mm no Powermate Range • 300 V

s2l 06

Abstract: LCP 2148 pcb connectors 1747940000 conexel S2L 92 Weidmuller 1630150001 1748550000 STRIP TEMPLATE SC
Contextual Info: Argentina Australia Austria Bahrain Belarus Belgium Brazil Bulgaria Canada Chile China Costa Rica Colombia Croatia Czech Republic Denmark Egypt Estonia Finland France Germany Greece Guatemala Honduras Hong Kong Hungary India Indonesia Iran Ireland Israel Italy

Contextual Info: DR A M M O D U L E KMM466F803BS2-L 8Mx64 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 4 66 F 80 3B S2-L Revision History Version 0.0 (Sept, 1997) , Removed two AC parameters tCACP(access time from CAS) and tAAP(access tim e tro m col. addr.) in AC CHARACTERISTICS.

WEIDM

Abstract: powermate
Contextual Info: Printed Circuit Board Connectors Many of our printed circuit board connectors are specialists. To help you to keep track of the variety, we have arranged our pin headers and socket blocks by their features. Weidmueller offers five different product families:

s2l 78

Abstract: 281-1406-ND 281-1408-ND 281-1448-ND 12AWG 281-1414-ND Weidmuller BLZ 5.08 281-1943-ND 281-1181-ND 281-1849-ND
Contextual Info: p114-118 Weidmuller Term. Blk 3/6/06 10:01 AM Page 1 Terminal Blocks 6.2 4.4 8.3 Ø 1.3 16.75 Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm

1250410

Abstract: 100352 BK SMK 1500 162554-000 PA66 - GF 25 relay
Contextual Info: Weidmüller – Partner in Industrial Connectivity 2 PCB terminal blocks, PCB connectors, panel feedthrough terminal blocks and electronics housings Catalogue 2013 Let’s connect. Catalogue 2013 OMNIMATE – device connectivity As experienced experts we support our customers and partners around the world

APT5010B

Contextual Info: • 0 2 5 7 * 10 ^ DÜG22Q2 bTT APT5010B2VR ADVANCED POW ER Te c h n o lo g y 500V 47A 0.100Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

zo 107 NA P 611

Abstract: BFR96 L 0403 817 BFR96T
Contextual Info: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain

Avantek amplifier uto 521

Abstract: transistor K 2937
Contextual Info: What HEW LETT mL'EM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 521 Series Features • Frequency Range: 5 to 500 MHz • High Gain: 30.0 dB Typ Applications • IF/RF Amplification Description Pin Configuration

Contextual Info: I Ordering number : ENN6578 NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions Features unit : mm • Low noise : NF=1.5dB typ f=2GHz . • High cut-off frequency : fx=10G H z typ (V cE =l V). 2 1 8 3

kl SN 102 94-0

Abstract: WV2 marking marking WV2 Q 371 Transistor BFQ67WI
Contextual Info: TEMIC BFQ67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain

955 539 ic

Abstract: BFP81 0211s ix 0640
Contextual Info: Tem ic BFP81 Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

temic 0675

Abstract: 7334
Contextual Info: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

A738

Abstract: 2SC4926
Contextual Info: 2SC4926 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fT = ! I G H z Typ • H igh gain, low noise figure PG = 16.5 dB Typ, N F = I . I dB T yp at f = 900 M H z Outline 1. 2. 3. 4.

Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. NF —1.8dB, |S2lel2= 10dB f=2GHz + 0.2 2 .9 -0 -3 II -a MAXIMUM RATINGS (Ta = 25°C)

CL31A

Abstract: CL05A
Contextual Info: August 2009 MULTILAYER CERAMIC CAPACITORS We, Samsung, declare that our component MLCC is produced in accordance with EU RoHS directive. 1. RoHS Compliance and restriction of Br The following restricted materials are not used in packaging materials as well as products in compliance with the law and restriction.

sem 2106

Abstract: TRANSISTOR 3856
Contextual Info: 2SC4317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r a 3 1 7 M F • V ■ m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF - l.ldB , |S 2 ie l2 = 13dB f=lGHz + 0.5 2.5 -0.3 +0.25

Contextual Info: Thal H E W L E T T mLEm P a c k a r d Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1058 Series F e a tu re s D escription Pin C onfiguration • Frequency Range: 5 to 1000 MHz The 1058 Scries is a 5-volt twostage, thin-film RF amplifier using

LM 3171

Abstract: IC LM 1246
Contextual Info: TOSHIBA 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC432Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF - l.ld B , U nit in mm |S2lel2= 15dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL

IC 4011

Abstract: 2SC5092 4011 TOSHIBA
Contextual Info: TOSHIBA 2SC5092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5092 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF —1.8dB, |S2lel2= 9-5dB f=2GHz + 0.2 2.9-0-3 II -a M A XIM U M RATINGS (Ta = 25°C)

2sc2952

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ V o = 120 dB|iV/75 i l The NE246 is an NPN transistor designed for broadband

CL31A

Abstract: CL05A CL10B104KB8
Contextual Info: June 2009 Passive components Sales Office ● Head Office 206, Cheomdansaneop Road, Youngtong-gu, Suwon, Kyonggi Province 443- 743, Korea Europe Te l: +82-31-210 -6328 E-mail:james.pyun@samsung.com America Te l: +82- 31- 210 - 6794 E-mail:randy.kim@samsung.com

MOLEX 5558 drawing

Abstract: 15mi
Contextual Info: 10 4 NOTES M A T ER IA L: S E E CH ART FINISH: S E E C H A R T P R O D U C T SPEC IF ICATION : PS - 5 5 5 6 - 0 0 1 , P S - 5 5 5 6 - 0 0 2 , P S - 5 5 5 6 - 0 0 5 . PA C K A G IN G S PEC IF ICAT IO N : P K - 5 5 5 8 - 0 0 1 FO R CHAIN P K - 5 5 5 6 - 0 0 3 FO R LO O S E