c2316
Abstract: Remocon 558 KS57C2308 lcd circuit diagram for samsung s3p7235 SAM47 S3C7238 pin DIAGRAM OF DIP TOP 244 PN
Text: 22-S3-C7238/P7238/C7235/P7235-062000 USER'S MANUAL S3C7238/P7238/C7235/P7235 KS57C2308/P2308/C2316/P2316 4-Bit CMOS Microcontroller Revision 2 Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set Oscillator Circuits Interrupts
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22-S3-C7238/P7238/C7235/P7235-062000
S3C7238/P7238/C7235/P7235
KS57C2308/P2308/C2316/P2316)
SAM47
S3P7238/P7235
c2316
Remocon 558
KS57C2308
lcd circuit diagram for samsung s3p7235
S3C7238
pin DIAGRAM OF DIP TOP 244 PN
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BFQ31R
Abstract: "UHF Transistors" BFQ31AR BFQ31 BFQ31A DSA003677
Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS BFQ31 BFQ31A ISSUE 3 JANUARY 1996 PARTMARKING DETAILS BFQ31 S2 BFQ31A S4 BFQ31AR S5 BFQ31R S3 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage
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BFQ31
BFQ31A
BFQ31AR
BFQ31R
100MHz
60MHz
BFQ31R
"UHF Transistors"
BFQ31AR
BFQ31
BFQ31A
DSA003677
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s3-r-a2.5
Abstract: bos s3-r-a2.5 S3-S-D12 s3s-a2 S3T-R-D12-PNP S3S-C10 S3S-B2 S3-S-C50 S3T-R-C50-PNP s3t-s-e1-pnp
Text: Block Style Optical Sensors Technical Description When there is no space for traditional sensors, there is only one answer: miniaturization. The diffuse BOS S3 with its small dimensions 13 x 26 × 52 mm can be used in locations with shallow installation depth (right angle
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Untitled
Abstract: No abstract text available
Text: 21-S3-C7335/P7335-1199 USER'S MANUAL S3C7335/P7335 4-Bit CMOS Microcontroller Revision 1 S3C7335/P7335 4-BIT CMOS MICROCONTROLLER USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the
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21-S3-C7335/P7335-1199
S3C7335/P7335
SEG11/P9
40-Pin
TB573316A
AS40D-A
SM6306
TB573316A
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S10 diode
Abstract: IS813
Text: IS813 S10/S7/S5/S3: Photon Coupled Interrupter, 4 Pin Transistor, Fast Switching Datasheet ISOCOM LTD: BSI9000 and CECC20000 Approved Manufacturer Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055
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IS813
S10/S7/S5/S3:
BSI9000
CECC20000
S10/S7/S5/S
IS813S10
IS813S7
IS813S5
IS813S3
S10 diode
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SM1350
Abstract: No abstract text available
Text: SM1350 series • ■ ■ ■ ■ ■ ■ Basic Functions • 4.0 MHz oscillator frequency • Power-save function - Oscillator stopped when no output - S0 to S3, MODE, LH pull-up resistors open • BTL or A-class outputs • Chattering prevention circuit STN, STOP, S0
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SM1350
10-bit
16-tone
1024-step
NC9611BE
CIRCUITS--21
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TRANSISTOR b1181
Abstract: 2SD1649 SANYO KOGYO JIS B1181 LA78 U5DR sanyo transistor T03-PML
Text: SANYO SEMICONDUCTOR 1EE D | CORP 7T17Q7t. GQOSIBD •T-S3-U 2SD1649 - NPN Triple Diffused Planar S ilicon Transistor 2039 Color TV Horizontal Deflection Output Applicationsfwith Damper Diode 1755B Applications . High-voltage, power switching Features . Fast speed tfmax=0.4us).
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2SD1649
QD513Q
1755B
B1181
B1252
TRANSISTOR b1181
2SD1649
SANYO KOGYO
JIS B1181
LA78
U5DR
sanyo transistor
T03-PML
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NPN DARLINGTON 10A 500V
Abstract: diode 500v 10A
Text: -Jolitroi i lp[s3@ yj Tr ©¡&TTÄ[L®< Devices. Inc. HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED DARLINGTON CHIP NUM BER WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold
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305mm)
10MHz
10MHz
400pF
400pF
SDM4066,
SDM4067
NPN DARLINGTON 10A 500V
diode 500v 10A
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TRANSISTOR BI 187
Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage
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BUV71
T0126
15A3DIN
TRANSISTOR BI 187
sot-23 npn marking code cr
TRANSISTOR BC 187
BUV71
bc 187 npn transistor
TRANSISTOR BI 237
on BC 187 TRANSISTOR
telefunken ta 750
12A3
T0126
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BUV71
Abstract: A 2712 FC10A telefunken ta 750 a2712 PSA-25 BUV71 telefunken
Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage
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BUV71
BUV71
A 2712
FC10A
telefunken ta 750
a2712
PSA-25
BUV71 telefunken
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor
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0D271bD
H11AA1-H11AA4
H11AAI
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: S3 S£ M 'C IC IM O , , n T a n 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
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2N5210
2N5088
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RX1011B250Y
Abstract: No abstract text available
Text: DEVELOPMENT ObE data D b b S3 T3 1 N AME R 0015175 PH ILIPS/D ISCRETE nr- PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C broadband pulse power amplifiers operating in the 1.03 to 1.09 GHz frequence range.
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DD1S17S
RX1011B250Y
VCB-50
VCE-20
0Q1S17Ã
T-33-15
RX1011B250Y
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2SD424
Abstract: 2SB554
Text: 2SD424 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. fS 25.0 MAX. FEATURES : OZÌJM&X. S3 • High Power Dissipation : Pc=150W • High Breakdown Voltage : V c e O=180V + 0.09 0i.o~o.o3 • Complementary to 2SB554. • Recommended for 100W High Fiderity Audio
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2SD424
2SB554.
2SD424
2SB554
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ESM5045D
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc^E S> bb53^31 OOEflbOb 0 S3 H A P X ESM5045D V SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).
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ESM5045D
OT227B.
Csat/50;
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photo transistor til 78
Abstract: 74S00 74H00 H74A1 transistor cross ref 74H00 TTL TTL 74H00
Text: f G E SOLID STATE 01 DE § 3S7S0fll 001^755 fl | Optoelectronic Specification*. T-V/-S3 Photon Coupled Isolator H74A1 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor TTL Interface T he G E Solid State H74A1 provides logic to logic optical interfacing of TT L gates with
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H74A1
H74A1
74H00
74S00
500VDc)
photo transistor til 78
transistor cross ref
74H00 TTL
TTL 74H00
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HALF BRIDGE NPN DARLINGTON POWER MODULE
Abstract: SGS35DB070 transistor j237 diode sg 5 ts
Text: 30E_*_ • ï'iaisav 0030712 s ■ "ì • Vfr SGS-THOMSON s_6 - ôD gfôm i@ ¥fô *l S G S3 5 D B 070D s-THOMSON HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION (2500V RMS ■ LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE
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O-240)
PC-029«
HALF BRIDGE NPN DARLINGTON POWER MODULE
SGS35DB070
transistor j237
diode sg 5 ts
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transistors BC 458
Abstract: transistors BC 457 transistors BC 458 pnp BC 458 BDS940 smd transistors 458 bc 457 9351 npn 940 BDS934
Text: PHILIPS INTERNATIONAL Philips Components Product specification date of issue April 1991 • 7U0S2b BDS934/936/938/940/942 r-S3-/7 Data sheet status SbE * PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PN P silicon epitaxial base transistors
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BDS934/936/938/940/942
OT223)
BDS933/935/
BDS934
BDS936
BDS938
BDS940
BDS942
transistors BC 458
transistors BC 457
transistors BC 458 pnp
BC 458
smd transistors 458
bc 457
9351
npn 940
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CSB546
Abstract: CSD401 G229
Text: CSD401 CSD401 NPN PLASTIC POWER TRANSISTOR Complementary CSB546 TV Vertical Deflection Output Applications DIM A B C D E F G H J K L M N JcL- — MIN 14.42 9.63 3.56 - 1,15 3.75 2,29 2.54 MAX 16.51 10.67 4.S3 0 .90 1.40 3,88 2.79 3.43 0 ,5 6 12.70 14.73 6,35
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CSD401
CSD401
CSB546
B3a33cm
0D01154
CSB546
G229
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Untitled
Abstract: No abstract text available
Text: SOLID STATE DEVICES INC 12E D Jfl3tbDll GDDBDSl T | T - S3-OS- 2N5013 THRU 2N5015 500 mA HIGH VOLTAGE NPN TRANSISTOR 8 0 0 -1 0 0 0 VOLTS CASE STYLE W JEDEC TO—5 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396
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2N5013
2N5015
2N5010
2N5012
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IS-953
Abstract: GEPS2001
Text: E SOLI» STATE 01 Optoelectronic Specifications DE § 3 0 7 5 0 0 1 DOnflSfl 0 T ^ J -S3 K' Photon Coupled Isolator GEPS2001 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State GEPS2001 is a gallium arsenide, infrared emit ting diode coupled with a silicon phototransistor in a dual-in-line
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GEPS2001
GEPS2001
33mW/Â
E51868
3fl75DÃ
flL-100Ã
IS-953
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ic lm723
Abstract: SCHEMATIC POWER SUPPLY WITH lm723 LM723CH 1N1426 LM723CM LM723C LM723 0 to 15 voltage regulator power supply LM723 POWER SUPPLY lm723
Text: LM723/LM723C S3 National Æ m Semiconductor LM723/LM723C Voltage Regulator General Description Features The LM723/LM723C is a voltage regulator designed primar ily for series regulator applications. By itself, it will supply output currents up to 150 mA; but external transistors can
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LM723/LM723C
LM723/LM723C
LM723C
LM723
TL/H/8563-18
TL/H/8563-19
ic lm723
SCHEMATIC POWER SUPPLY WITH lm723
LM723CH
1N1426
LM723CM
LM723 0 to 15 voltage regulator power supply
LM723 POWER SUPPLY
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controller vending machine
Abstract: No abstract text available
Text: LUMEX O P T O / C O M P O N E N T S INC HIE D Sblbll3 0000004 1 • ILMX 7-V/-S3 ItCjiT-J P H O TO C O U PLER S KPC814,824,844 DIMENSIONS Unit: mm KPC814, 824, 844, photocoupler, is an optically coupled pair employing a GaAs IRED and a silicon NPN phototransistor.
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KPC814
KPC814,
KPC824
KPC844
5000volt
I---------------80
controller vending machine
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BFR53
Abstract: transistor 1061 transistor h 1061
Text: • 1.1,S3 S 31 00251Mb MS3 H A P X Philips Semiconductors Product specification AflER P H I L I P S / D I S C R E T E b7E D NPN 2 GHz wideband transistor DESCRIPTION BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application In thick and thin-film
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00251Mb
BFR53
bbS3T31
BFR53
transistor 1061
transistor h 1061
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