S4952 Search Results

S4952

Contextual Info: T1/CEPT/ISDN-PRI TRANSFORMER P/N: S4952 DATA SHEET A. Electrical Specifications@ 25C : 1. Turns Ratio Pri:Sec ±5% : 1:2CT & 1:1.36 2. OCL : 1.2 mH Min.& 1.2 mH Min. 3. Cw/w : 35 pF Max.& 35 pF Max. 4. L.Lsec : 0.50 µH Max.& 0.80 µH Max. 5. DCRpri : 0.80 O Max. & 0.80 O Max.

S4952

Abstract: st 1412 1412
Contextual Info: Bothhandusa.com T1/CEPT/ISDN-PRI TRANSFORMER P/N: S4952 DATA SHEET Page : 1/1 Feature ! Operating temperature range: 0℃ to +70℃. Storage temperature range: -25℃ to +125℃. ! Electrical Specifications @ 25°C Part Turns Ratio ±5% Number S4952 14-12:1-3

14nc50

Contextual Info: T em ic SÌ3441DV S e m i c o n d u c t o r s P-Channel 2.5-V G-S Rated MOSFET Product Summary V „ s (V ) 20 n)S(on) (Q ) I d (A) 0.10 @ Vos = -4.5 V ±3.3 0.135 @ V GS = -2.5 V ±2.9 (4 )S O TSO P-6 Top View Œ Œ cr 1 6 2 5 3 4 u n n Power Dissipation

Contextual Info: Tem ic SÌ9424DY S e m i c o n d u c t o r s P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) rDS(on) (&) 12 I d (A) 0.025 @ VGs = -4-5 V ±7.7 0.033 @ VGS = -2.5 V ±6.6 is-v^ SO-8 °"1 Top View P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Contextual Info: Tem ic SÌ6802DQ S e m i c o n d u c t o r s N-Channel, Reduced Qg, Fast Switching MOSFET Product Summary V d s V rDS(on) ( ^ ) Id (A) 0.075 @ VGS = 4.5 V ±3.3 0.110 @ VGs = 3.0 V ±2.7 20 TSSOP-8 , It O - — ‘ |- * S o u rc e P in s 2 , 3, 6 , a n d 7

Diode 31DQ

Abstract: It83 si6331dq
Contextual Info: T E M IC SÌ6331DQ Semiconductors Triple N -C h an n el 30-V D-S Rated M O S F E T P rod uct S u m m a r y V DS(V) 30 I d (A) r DS(on) (£2) 0.028 @ V gs = 10 V ± 5 .6 0.042 @ VGS = 4.5 V ± 4 .5 po T SS O P-28 *Source Pins 2, 3, 25, 26, and 27 must be tied common.

RESISTANCE11

Contextual Info: T e m ic SÌ9529DY Semiconductors Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) N-Channel 20 P-Channel -12 rDS(on) (Q ) 0.03 @VGS = 4.5 V 0.04 @ VGS = 2.5 V 0.05 @ Vqs = -4-5 V 0.074 @VGS =-2.5 V I d (A) ±6 ±5.2 ±5 ±4.1 1.5-^

Contextual Info: Tem ic SÌ9922DY Semiconductors Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 rDS(on) (^ ) 0.080 @ Vos = 4.5 V 0.090 @ Vos = 2.5 V I d (A) ±4.0 ±3.7 D Q SO-8 o— li Top View Ô s N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Contextual Info: Tem ic SÌ6331DQ S em i co n d u c t or s Triple N-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) Id r DS(on) ( ^ ) 30 •m i '"04 (A) 0.028 @ VGs = 10 V ±5.6 0.042 @ VGs = 4.5 V ±4.5 p o '" 6 ' TSSOP-28 Di 2T| D i Si Œ 51 Cl Gi Œ m ID Si Di Œ

Si6802DQ

Contextual Info: Si6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6802DQ G *Source Pins 2, 3, 6, and 7 must be tied common.

Bi-Directional P-Channel mosfet

Abstract: si4720cy Si4435DY Si4720
Contextual Info: Si4720CY Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Two Independent Inputs D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking

Si3455DV

Contextual Info: Si3455DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET

SUD45P03-15

Contextual Info: SUD45P03-15 P-Channel Enhancement-Mode Transistor Product Summary rDS on (W) ID (A)a 0.015 @ VGS = –10 V "13 0.024 @ VGS = –4.5 V "8 VDS (V) –30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si4947DY

Contextual Info: Si4947DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET

si9922

Abstract: Si9922DY
Contextual Info: Si9922DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.080 @ VGS = 4.5 V "4.0 0.090 @ VGS = 2.5 V "3.7 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si4948EY

Contextual Info: Si4948EY Dual P-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET

77-1

Abstract: Si4558DY
Contextual Info: Si4558DY Complementary MOSFET Half-Bridge N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V "6 0.060 @ VGS = 4.5 V "4.8 0.040 @ VGS = –10 V "6 0.070 @ VGS = –4.5 V "4.4 S2 SO-8 G2 S1 1 8 D G1

Contextual Info: Si6459DQ Siliconix P-Channel 60-V D-S Rated MOSFET Product Summary VDS (V) –60 60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 2 3 4 D Si6459DQ 8 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.

Si4435DY

Abstract: Si4720 Si4720CY
Contextual Info: Si4720CY Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Two Independent Inputs D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking

Contextual Info: Tem ic SÌ9426DY S e m i c o n d u c t o r s N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) 20 r DS(on) (Œ) I d (A) 0.0135 @ VGS = 4.5 V ±10 0.0160 @ VGs = 2.5 V ±9.3 SO-8 N-Channel M OSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Contextual Info: Temic SÌ4559EY S e m i c o n d u c t o r s Dual N- and P-Channel 60-Y, 175°C Rated MOSFET Product Summary V d s V N-Channel r DS(on) ( ß ) I d (A ) 0.055 @ V os = 10 V ± 4.5 0.075 @ VGS = 4.5 V ± 3 .9 0.120 @ VGs = -10 V ± 3.1 0.150 @ VGS = -4 .5 V

gs 069

Contextual Info: Tem ic SÌ3439DX S em i co n d u c t or s P-Channel, 2.5-V G-S Rated MOSFET Product Summary V d s (V) -20 I d (A) ± 1.8 ± 1 .6 ±1.5 rDS(on) (^ ) 0.155 @ V Gs = ^ .5 V 0.200 @ V os = -2.7 V 0.230 @ V os = -2.5 V (4)S Q TSOP-6 Top View (3) G 3 mm Ô (1,2, 5, 6) D

Contextual Info: Tem ic SÌ6361DQ S e m i c o n d u c t o r s Triple Complementary 30-Y D-S Rated Half-Bridge Product Summary V d s (V) N-Channel 30 P-Channel -30 r DS(«n) ( ß ) I d (A) 0.065 @ VGs = 10 V ±3.6 0.095 @ V gs = 4.5V ±3.0 0.085 @ VGs = —10 V ±3.1 0.19 @ VGs = -4-5 V

Contextual Info: Tem ic SÌ4946EY S e m i c o n d u c t o r s Dual N-Channel 60-V, 175° C Rated MOSFET Product Summary VDS V 60 5 I d (A) fDSion) (ß ) 0.055 @ VGs = 10 V ±4.5 0.075 @ VGS = 4.5 V ±3.9 f r_* S $ vti 8 ' SO-8 ~n D, Si [ T G, \T_ s2 \T G2 ~H D, Ji 6 1 D2